Study and application of s-d hybridization in the superconducting InN
| Project/Area Number |
22560304
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tokai University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 電気・電子材料 / InN / 半導体超伝導 / 高温超伝導型相転移 / 磁気プラズマ反射 / 磁気抵抗効果 / マイスナー効果 / ＩｎＮ / 超伝導 / ｓ－ｄ混成 / アンダーソン定理 / BCS超伝導 / 高温超伝導 / 2種類の電子 |
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| Research Abstract |
The superconductivity of InN with low carrier density near the Mott transition shows two types of superconducting transitions. One type occurs in the electrical conduction and in Meissner effect simultaneously, which is similar to that observed in high Tcsuperconductors. The other is BCS-type superconductivity with the superconducting gap similar to that of metal In. The structure of the Fermi surface is investigated measuring magneto-plasma reflection and magneto- resistance at low temperatures. The results show that there are two types of electrons in the conduction band. In order to explain the two types of superconductivity, a model of residual carriers consisting s- and d-electrons caused by a strong s-d coupling in the valence band is presented.
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Report
(4 results)
Research Products
(16 results)
