Attempt of application of half-metal granular to spin transistor structure
| Project/Area Number |
22560308
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Daido University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Keywords | 電気・電子材料(半導体) / 誘電体 / 磁性体 / 超誘電体 / 有機物 / 絶縁体 / 超伝導体 / スピントランジスタ / グラニュラー膜 / ハーフメタル / トンネル伝導 / スピンエレクトロニクス |
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| Research Abstract |
The granular films consisting of a ful-Heusler CFAS alloy and Al2O3 exhibited a large MR ratio of about 18% at room temperature. This value is the largest value ever reported for magnetic metal-insulator granular films. It was suggested that the large MR ratio was obtained owing to the existence of granules with L21 or B2 phases, which exhibit high spin polarization. This result showed the possibility of the application of the half-metal to the granular films.
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Report
(4 results)
Research Products
(17 results)
