| Project/Area Number |
22560309
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Chubu University |
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Principal Investigator |
|
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| Co-Investigator(Renkei-kenkyūsha) |
IROKAWA Yoshihiro 物質・材料研究機構, 主任研究員 (90394832)
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| Project Period (FY) |
2010 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
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| Keywords | 電気・電子材料 / 窒化物半導体 / 半導体物性 / 結晶工学 / 電子・電気材料 / AlGaN/GaNヘテロ構造 / 半導体欠陥準位 / 結晶成長 / スイッチング特性 / 欠陥準位 / 残留炭素 / MOCVD結晶成長 / フォトキャパシタンス / DLOS / 電流コラプス / イエローバンド / MOCVD |
|---|
| Research Abstract |
In conventional AlGaN/GaN hetero-structures grown by MOCVD, the C impurity incorporation was enhanced with decreasing the growth temperature of the GaN buffer layer between 1120 and 1170℃. Concurrently, deep-level defects became dense at2.07, 2.80, and 3.23eV below the conduction band, presumably attributable to Ga vacancies and shallow C acceptors in the GaN buffer layer. Among them, the 2.80 and 3.23eV levels are found to be strongly responsible for the carrier-trapping phenomena in the AlGaN/GaN hetero-structures.
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