| Project/Area Number |
22560313
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Numazu National College of Technology |
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Principal Investigator |
NOGE Satoru 沼津工業高等専門学校, 電気電子工学科, 准教授 (10221483)
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| Co-Investigator(Renkei-kenkyūsha) |
UNO Takehiko 神奈川工科大学, 工学部, 教授 (50257408)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
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| Keywords | 薄膜 / エピタキシャル / 機能性 / 結晶 / 成膜技術 / 熱処理 / 成膜技 |
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| Research Abstract |
We present a method for the growth of oxide single crystal thin films on an amorphous substrate. At the first, we investigated growth of a cerium substituted YIG (Ce:YIG) single crystal film on SiO2 substrate. This method is consisted of two steps. The first step was the deposition of an amorphous film of CeY2Fe5O12 on a SiO2 substrate by RF-magnetron sputtering. The second step was crystallizing the film by raising its temperature to around 600 ?C in a vacuum or in argon (Ar) gas. A single crystal film of Ce:YIG was obtained after this thermal treatment. For the thermal treatment process to work, a small chip of GGG plate was placed on top of the film. Before contact with each other, the chip, the surfaces of the chip, and amorphous film were refreshed by Ar plasma. The surface refreshing process was decisive for single crystal growth.
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