Study on efficiency enhancement of next-generation CIGS thin film solar cell by sequential evaporation
| Project/Area Number |
22560314
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Wakayama National College of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 薄膜太陽電池 / 三元化合物 / カルコパイライト型 / 連続成膜法 |
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| Research Abstract |
In order to fabricate a next-generation CIGS thin film solar cell, the preparation conditions of the sequential evaporation method using ternary compounds were examined. CIGS thin film solar cell with a high Ga content by controlling the Ga2Se3 addition in the second step was fabricated and demonstrated open circuit voltage Voc=550mV, short circuit current density Isc=23.8mA/cm2, fill factor FF=0.55 and efficiency η=7.25%. This value was updated our previous performance. Moreover it was possible to improve the open circuit voltage by adding Na2Se and In2S3.
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Report
(4 results)
Research Products
(55 results)
