| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Research Abstract |
In order to fabricate a next-generation CIGS thin film solar cell, the preparation conditions of the sequential evaporation method using ternary compounds were examined. CIGS thin film solar cell with a high Ga content by controlling the Ga2Se3 addition in the second step was fabricated and demonstrated open circuit voltage Voc=550mV, short circuit current density Isc=23.8mA/cm2, fill factor FF=0.55 and efficiency η=7.25%. This value was updated our previous performance. Moreover it was possible to improve the open circuit voltage by adding Na2Se and In2S3.
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