| Project/Area Number |
22560318
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Ibaraki University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
SUGITA Ryuji 茨城大学, 工学部, 教授 (20292477)
HASEGAWA Yasuhiro 埼玉大学, 工学部, 准教授 (60334158)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 磁気メモリ / ナノワイヤ / スピントランスファートルク / 磁壁移動 / 電流誘起時壁移動 / 磁壁移動型メモリ / フェリ磁性体 / 閾値電流密度 / 高密度化 / 積層構造ナノワイヤ / 電流誘起磁壁移動 / 積層構造 |
|---|
| Research Abstract |
In order to reduce a critical current density in nanowire memories based on spin-transfer torque effect, the effect of material parameters on the critical current density has been investigate. In order to realize high-density bit, the effect of nanowire structure on recording density has also been studied. As a result, the redction of the saturation magnetization is an effective way to reduce the critical current density, and we have proposed that a ferrimagnetic material near the compensation composition is a strong candidate for the low current operation. Moreover, we have proposed the bilayer nanowire consisting of a granular layer and a continuous layer to achieve high-density bit further than that of single-layered nanowires.
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