| Project/Area Number |
22560321
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Electro-Communications |
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Principal Investigator |
TAKAYAMA Yoichiro 電気通信大学, 先端ワイヤレスコミュニケーション研究センター, 客員教授 (90336826)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIKAWA Ryo 電気通信大学, 大学院・情報理工学研究科, 助教 (30333892)
本城 和彦 電気通信大学, 情報理工学(系)研究科, 教授 (90334573)
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| Co-Investigator(Renkei-kenkyūsha) |
HONJO Kazuhiko 電気通信大学, 大学院・情報理工学研究科, 教授 (90334573)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 超高周波 / 電子回路 / 電力増幅器 / カスコード回路 |
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| Research Abstract |
We proposed a new cascode circuit with independently biased transistors, which makes possible stable dc operation and independent setting of transistor operating modes. In consequence, the circuit can realize high-efficiency and low-distortion power amplifier. Microwave power amplifiers with the proposed configuration consisting of GaN HEMTs was first designed and fabricated. Also, 2 GHz-band power amplifier MMICs using InGaP/GaAs HBTs and GaAs pHEMTs were tried. These amplifiers realized high-efficiency and low-distortion performances, as expected.
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