Fabrication of InSb-based high-speed and low power devices on Si by using surface reconstruction controlled epitaxy
| Project/Area Number |
22560323
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | University of Toyama |
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Principal Investigator |
MORI Masayuki 富山大学, 大学院・理工学研究部, 准教授 (90303213)
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| Co-Investigator(Renkei-kenkyūsha) |
MAEZAWA Koichi 富山大学, 大学院・理工学研究部, 教授 (90301217)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | InSb / 表面再構成制御成長法 / ALD / quasi-pseudomorphic QW-MOSFETs / ヘテロエピタキシー / MOSFET / Al2O3 / SOI / ヘテロエピタキシャル / Al_2O_3 / ヘテロエピタキシャル成長 / MOSダイオード / FET / Si(111)基板 |
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| Research Abstract |
InSb has attracted much interest for application of ultra-fast and low power devices. To realize the InSb-based FET, we prepared the quasi-pseudomorphic quantum well MOSFETs, in which the thin InSb layer was grown on Si（111) substrate by using surface reconstruction controlled epitaxy,, and 10- 30nm-thick Al2O3 layer was deposited on the InSb layer. As the results, our quasi-pseudomorphic QW-MOFET device with 15nm-thick InSb layer, gate length of 5μm and gate width of 40μm showed high transconductance of 63mS/mm.
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Report
(4 results)
Research Products
(62 results)
