| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Research Abstract |
Using a coupled Monte Carlo technique for solving both electron and phonon Boltzmann transport equations, the transient electrothermal simulator for nanoscale Si devices was developed. To this end, novel algorithms for simulating phonon transport and Seebeck effects were proposed. It has been also suggested that the simulated observations on the hot spot generation and dissipation can be practically described by the equivalent thermal circuit model.
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