| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Research Abstract |
The goal of this research project is the development of pH sensor based on AlGaN/GaN heterostructure for the surveillance of cell culture. TiN Schottky electrode which could stand high temperature was developed using reactive sputtering. By optimizing the fabrication process of GaN MOSFET on AlGaN/GaN heterostructure which can be used as pH sensor, device with electron mobility of about 160 cm2/Vs was obtained. Through the research steps of design, fabrication, implementation and device evaluation, proper operation up to 80・C was confirmed. In the whole temperature ranges, near ideal sensitivity values were achieved.
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