Resistance Reduction of Ultra-fine Copper Interconnects by Annealing in Supercritical Fluids or with Electromigration

• Project/Area Number: 22560344
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Shibaura Institute of Technology
• Principal Investigator: UENO Kazuyoshi 芝浦工業大学, 工学部, 教授 (10433765)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000); Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2010: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
• Keywords: 集積回路配線 / 半導体超微細化 / デバイス設計・製造プロセス / 電子・電気材料 / 電子デバイス・機器 / ナノカーボン / グラフェン / 集積回路プロセス / 超臨界流体 / エレクトロマイグレーション / 微細構造制御 / 熱処理方法 / 電子散乱 / 低抵抗化

Research Abstract

Ultra-fine copper (Cu) interconnects used for integrated circuit are composed with fine crystal Cu grains. In this study, new annealing methods for enlargingthe grain sizes which lead to less scattering of electrons at the grain boundaries and the reduction of interconnect resistance. It was found that annealing in supercritical fluid (SC annealing) or under current stress (EM annealing) can enhance the grain growth by cleaning effect of supercritical fluids on Cu surfaces and electromigration (EM) effect, respectively. It was also found that an anisotropic grain growth along the current direction was obtained by EM effect with EM annealing. The obtained results will lead to the reduction of interconnect resistance and improved reliability.

Research Products

• [Journal Article] Japanese Journal of Applied Physics (2012)
  • Author(s): Liyana Razak, Takamasa Yamaguchi, Seishi Akahori, Hideki Hashimoto, Kazuyoshi Ueno
  • Journal Title: Current Induced Grain Growth of Electroplated Copper Film Volume: 51 05EA04 Issue: 5S Pages: 1-6
  • DOI: 10.1143/jjap.51.05ea04
  • Peer Reviewed
• [Journal Article] 半導体集積回路の配線に用いる銅めっき膜の不純物（解説） (2012)
  • Author(s): 上野 和良
  • Journal Title: 表面技術 Volume: 63 Pages: 227-232
  • Peer Reviewed
• [Journal Article] Impurities in Electroplated Copper Films for LSI Interconnection (2012)
  • Author(s): 上野和良
  • Journal Title: Journal of The Surface Finishing Society of Japan Volume: 63 Issue: 4 Pages: 227
  • DOI: 10.4139/sfj.63.227
  • NAID: 130002553394
  • ISSN: 0915-1869, 1884-3409
  • Peer Reviewed
• [Journal Article] Grain Growth Enhancement of Electroplated Copper Film by Supercritical Annealing (2010)
  • Author(s): Kazuyoshi Ueno, Yuji Shimada, Shigeru Yomogida, Seishi Akahori,Tomohiko Yamamoto,Takamasa Yamaguchi, Yoshinori Aoki, Akiko Matsuyama, Takashi Yata,, Hideki Hashimoto
  • Journal Title: Japanese Journal of Applied Physics Volume: 49 05FA08 Issue: 5S2 Pages: 05FA08-05FA08
  • DOI: 10.1143/jjap.49.05fa08
  • NAID: 210000068523
  • Peer Reviewed
• [Journal Article] Grain Growth Enhancement of Electroplated Copper Film by Supercritical Annealing (2010)
  • Author(s): 上野和良, (他計10名)
  • Journal Title: Japanese Journal of Applied Physics Volume: 49
  • NAID: 210000068523
  • Peer Reviewed
• [Journal Article] 超臨界流体中アニールによるめっき銅膜の改質 (2010)
  • Author(s): 上野和良, (他計10名)
  • Journal Title: 表面技術 Volume: 61 Pages: 583-586
  • NAID: 10026542629
  • Peer Reviewed
• [Presentation] Improvement of Multilayer Graphene Quality by Current Stress during Thermal CVD (2013)
  • Author(s): Liyana Razak, Daiki Tobino, Kazuyoshi Ueno
  • Organizer: Materials for Advanced Metallization 2013
  • Place of Presentation: Leuven、Belgium
  • Year and Date: 2013-03-11
• [Presentation] Improvement of Multilayer Graphene Quality by Current Stress during Thermal CVD (2013)
  • Author(s): Kazuyoshi Ueno
  • Organizer: Materials for Advanced Metallization (MAM) 2013
  • Place of Presentation: Leuven, Belgium
• [Presentation] 電流を印加した熱CVD法によるナノカーボン成長 (2013)
  • Author(s): 上野 和良
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 厚木市、神奈川県
• [Presentation] Current Induced Grain Growth of Electro-plated Copper Film (2011)
  • Author(s): Liyana Razak, Takamasa, Yamaguchi, Seishi Akahori, Hideki Hasimoto, and Kazuyoshi Ueno
  • Organizer: Advanced Metallization Conference 2011, Asian Session
  • Place of Presentation: Tokyo
  • Year and Date: 2011-09-14
• [Presentation] Current Induced Grain Growth of Electroplated Copper Film (2011)
  • Author(s): 上野和良
  • Organizer: Advanced Metallization Conference 2011, 21^<st>. Asian Session
  • Place of Presentation: 東京(芝浦工業大学)
  • Year and Date: 2011-09-11
• [Presentation] 超臨界アニールによるめっき銅膜の粒成長(4) EBSDによる粒観察 (2011)
  • Author(s): 青木 和慶,蓬田 茂,伊藤 寛征, 中島 里絵, 池野 昌彦, 上野 和良
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-09-02
• [Presentation] 超臨界アニールによるめっき銅膜の粒成長(4)EBSDによる粒観察 (2011)
  • Author(s): 上野和良
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形(山形大学)
  • Year and Date: 2011-09-02
• [Presentation] 電流ストレスによるめっきCu薄膜の粒成長:添加剤濃度依存性 (2011)
  • Author(s): 上野和良
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形(山形大学)
  • Year and Date: 2011-09-02
• [Presentation] 超臨界アニールによるめっき銅膜の粒成長(3)圧力及び膜厚依存性 (2010)
  • Author(s): 青木和慶, (他計5名)
  • Organizer: 応用物理学会
  • Place of Presentation: 長崎大学 (長崎県)
  • Year and Date: 2010-09-15
• [Book] 半導体・MEMSのための超臨界流体 (2012)
  • Author(s): 上野和良、他
  • Publisher: コロナ社
• [Patent(Industrial Property Rights)] グラフェン膜製造方法、グラフェン膜製造装置 (2013)
  • Inventor(s): 上野和良、ラザクリヤナ
  • Industrial Property Rights Holder: 芝浦工業大学
  • Acquisition Date: 2013-01-24
• [Patent(Industrial Property Rights)] グラフェン膜製造方法、グラフェン膜製造装置 (2013)
  • Inventor(s): 上野 和良、ラザク リヤナ
  • Industrial Property Rights Holder: 芝浦工業大学
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-01-24