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Quantum Corrected Simulation of III-V MOSFETs

Research Project

Project/Area Number 22560346
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionTokyo University of Science

Principal Investigator

FUJISHIRO Hiroki  東京理科大学, 基礎工学部, 教授 (60339132)

Co-Investigator(Kenkyū-buntansha) HARA Shinsuke  東京理科大学, 基礎工学部, 助教 (30434038)
Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
KeywordsIII-VMOSFET / III-V族化合物半導体 / 量子補正モンテカルロシミュレーション / バリスティック伝導 / 量子輸送 / CMOS ロードマップ / III-VMOSFET / III-V族化合物半導体 / 歪バンド構造 / CMOSロードマップ / MOSFET / InGaAs / InP
Research Abstract

The ability of the nano-scale MOSFETswith various III-V channel materials is investigated by using the quantum-corrected Monte Carlo (MC) simulation. The InGaAs channel shows the largest injection velocity v , because of the smallest electron effective mass inj m*. However, the average velocity vsis decreased by the alloy scatteringand the electron reinjection fromthe drain. Meanwhile, the gate capacitance Cgis smallest, and then the electron density n b becomes smallest. In the GaAs channel, the Lvalley conduction occurs because of the narrow Γ-Lvalley separation. Then, nbbecomes larger, but vinjbecomes smaller. The InP channel shows the smallest v because of the largest inj m*. However, the electron reinjection is less pronounced. Meanwhile, because of the largest Cg, n b becomes largest. Eventually, the InP channel shows the largest drain current Ids. The cutoff frequency fTof the nano-scale HEMTs with various III-V channel materials is also estimated as a indicator of high-speed capability.

Report

(4 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (77 results)

All 2013 2012 2011 2010 Other

All Journal Article (22 results) (of which Peer Reviewed: 18 results) Presentation (49 results) (of which Invited: 1 results) Remarks (6 results)

  • [Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013

    • Author(s)
      Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe, and A. Kasamatsu
    • Journal Title

      Proceedings of 25th International Conference on Indium Phosphide and Related Materials (IPRM2013)

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013

    • Author(s)
      A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
    • Journal Title

      Abstracts of 40th International Symposium on Compound Semiconductors (ISCS2013)

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013

    • Author(s)
      Yutaro Nagai
    • Journal Title

      Proceedings of 25th International Conference on Indium Phosphide and Related Materials (IPRM2013)

      Volume: 未定

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013

    • Author(s)
      Akio Nishida
    • Journal Title

      Abstracts of 40th International Symposium on Compound Semiconductors (ISCS2013)

      Volume: 未定

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012

    • Author(s)
      J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
    • Journal Title

      Proceedings of 24th International Conference on Indium Phosphide and Related Materials (IPRM2012)

      Pages: 237-240

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012

    • Author(s)
      永井 佑太郎, 佐藤 純, 原 紳介, 藤代博記, 遠藤 聡, 渡邊 一世
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 112 Pages: 37-42

    • NAID

      110009626392

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
  • [Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2012

    • Author(s)
      T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
    • Journal Title

      Physica Status Solidi C

      Volume: 9 Issue: 2 Pages: 346-349

    • DOI

      10.1002/pssc.201100275

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012

    • Author(s)
      Jun Sato
    • Journal Title

      Proceedings of 24th International Conference on Indium Phosphide and Related Materials (IPRM2012)

      Volume: なし Pages: 237-240

    • DOI

      10.1109/iciprm.2012.6403367

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

    • Author(s)
      S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
    • Journal Title

      Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)

      Pages: 41-42

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011

    • Author(s)
      佐藤 純, 町田 史晴, 原 紳介, 藤代 博記
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 111 Pages: 79-84

    • NAID

      110008800765

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
  • [Journal Article] Strain Effects on Performances in InAs HEMTs2011

    • Author(s)
      F. Machida, H. Nishino, J. Sato, H. Watanabe, S. Haraand H. I. Fujishiro
    • Journal Title

      Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)

      Pages: 437-440

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

    • Author(s)
      T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
    • Journal Title

      Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)

      Pages: 469-470

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2011

    • Author(s)
      H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
    • Journal Title

      Physica Status Solidi C

      Volume: 8 Pages: 306-309

    • Related Report
      2012 Final Research Report 2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2011

    • Author(s)
      H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
    • Journal Title

      Proc. International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)

      Volume: 2 Pages: 1350-1352

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2011

    • Author(s)
      本間 嵩広,渡邉 久巨,原 紳介,藤代 博記
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 110 Pages: 47-52

    • NAID

      110007890036

    • Related Report
      2012 Final Research Report
  • [Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2011

    • Author(s)
      H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)

      Pages: 156-159

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

    • Author(s)
      S.Hara, F.Machida, J.Sato, H.I.Fujishiro, A.Endo, Y.Yamashita, I.Watanabe
    • Journal Title

      Abstracts of 9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)

      Pages: 41-42

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Strain Effects on Performances in InAs HEMTs2011

    • Author(s)
      F.Machida, H.Nishino, J.Sato, H.Watanabe, S. Hara, H. I. Fujishiro
    • Journal Title

      Proceedings of 23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)

      Pages: 437-440

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

    • Author(s)
      T.Homma, K.Hasegawa, H. Watanabe, S.Hara, H.I.Fujishiro
    • Journal Title

      Abstracts of 38th International Symposium on Compound Semiconductors (ISCS2011)

      Pages: 469-470

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010

    • Author(s)
      H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
    • Journal Title

      Proc.International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)

      Volume: 2 Pages: 1350-1352

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010

    • Author(s)
      本間嵩広, 渡邉久巨, 原紳介, 藤代博記
    • Journal Title

      電子情報通信学会技術研究報告

      Volume: 110 Pages: 47-52

    • NAID

      110007890036

    • Related Report
      2010 Annual Research Report
  • [Journal Article] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010

    • Author(s)
      H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishiro
    • Journal Title

      Proceedings of 22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)

      Pages: 156-159

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013

    • Author(s)
      Y. Nagai, S. Nagai, J. Sato, S. Hara, H. I. Fujishiro,A. Endoh, I. Watanabe,and A. Kasamatsu
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
    • Place of Presentation
      神戸
    • Year and Date
      2013-05-23
    • Related Report
      2012 Final Research Report
  • [Presentation] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013

    • Author(s)
      A. Nishida, R. Ohama, S. Hara, and H. I. Fujishiro
    • Organizer
      40th International Symposium on Compound Semiconductors (ISCS2013)
    • Place of Presentation
      神戸
    • Year and Date
      2013-05-20
    • Related Report
      2012 Final Research Report
  • [Presentation] Comparative Study on Frequency Limits of Nanoscale HEMTs with Various Channel Materials2013

    • Author(s)
      Yutaro Nagai
    • Organizer
      25th International Conference on Indium Phosphide and Related Materials (IPRM2013)
    • Place of Presentation
      Kobe Convention Center, Kobe, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Comparative Study on III-V Nanoscale DG MOSFETs with Various Channel Materials2013

    • Author(s)
      Akio Nishida
    • Organizer
      40th International Symposium on Compound Semiconductors (ISCS2013)
    • Place of Presentation
      Kobe Convention Center, Kobe, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Analysis of Electron Transport in Nano-Scale III-V MOSFETs2012

    • Author(s)
      H. I. Fujishiro
    • Organizer
      BIT's 2nd Annual World Congress of Nanoscience and Nanotechnology (Nano-S&T 2012)
    • Place of Presentation
      Qingdao, China.
    • Year and Date
      2012-10-26
    • Related Report
      2012 Final Research Report
  • [Presentation] InGaAs DG-MOSFETの駆動電流に及ぼすソース/ドレイン拡張領域の影響の解析2012

    • Author(s)
      西田 明央,長谷川 慶,原 紳介,藤代 博記
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Year and Date
      2012-09-11
    • Related Report
      2012 Final Research Report
  • [Presentation] III-V DG-MOSFET の駆動電流に及ぼすソース/ドレイン形状の影響に関する理論的解析2012

    • Author(s)
      長谷川 慶,西田 明央,原 紳介,藤代 博記
    • Organizer
      第73回応用物理学会学術講演会
    • Place of Presentation
      愛媛大学
    • Year and Date
      2012-09-11
    • Related Report
      2012 Final Research Report
  • [Presentation] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012

    • Author(s)
      J. Sato, Y. Nagai, S. Hara, H. I. Fujishiro, A. Endoh, and I. Watanabe
    • Organizer
      24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
    • Place of Presentation
      University of California Santa Barbara, USA.
    • Year and Date
      2012-08-27
    • Related Report
      2012 Final Research Report
  • [Presentation] 量子補正モンテカルロ法による歪み InSb HEMT の遅延時間解析2012

    • Author(s)
      永井 佑太郎, 佐藤 純, 原 紳介, 藤代博記, 遠藤 聡, 渡邊 一世
    • Organizer
      電子情報通信学会 ED 研究会
    • Place of Presentation
      福井大学
    • Year and Date
      2012-07-26
    • Related Report
      2012 Final Research Report
  • [Presentation] InSb HEMT のデバイス特性に及ぼすラフネス散乱の影響2012

    • Author(s)
      佐藤 純,荒井 敦志,町田 史晴,原 紳介,藤代 博記,遠藤 聡,渡邊 一世
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2012 Final Research Report
  • [Presentation] InSb HEMTのデバイス特性に及ぼすラフネス散乱の影響2012

    • Author(s)
      佐藤純, 荒井敦志, 町田史晴, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
    • Organizer
      2012年春季第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-18
    • Related Report
      2011 Annual Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Analysis of Electron Transport in Nano-Scale III-V MOSFETs2012

    • Author(s)
      Hiroki I. Fujishiro
    • Organizer
      BIT's 2st Annual World Congress of Nanoscience and Nanotechnology (Nano-S&T 2012)
    • Place of Presentation
      Qingdao Kempinski Hotel, China
    • Related Report
      2012 Annual Research Report
    • Invited
  • [Presentation] InGaAs DG-MOSFETの駆動電流に及ぼすソース/ドレイン拡張領域の影響の解析2012

    • Author(s)
      西田 明央
    • Organizer
      2012年電子情報通信学会ソサイエティ大会
    • Place of Presentation
      富山大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] III-V DG-MOSFET の駆動電流に及ぼすソース/ドレイン形状の影響に関する理論的解析2012

    • Author(s)
      長谷川 慶
    • Organizer
      2012年秋季 第73回 応用物理学会学術講演会
    • Place of Presentation
      愛媛大学城北地区・松山大学文教キャンパス
    • Related Report
      2012 Annual Research Report
  • [Presentation] Analysis of Performances of InSb HEMTs Using Quantum-Corrected Monte Carlo Simulation2012

    • Author(s)
      Jun Sato
    • Organizer
      24th International Conference on Indium Phosphide and Related Materials (IPRM2012)
    • Place of Presentation
      University of California Santa Barbara, CA, USA
    • Related Report
      2012 Annual Research Report
  • [Presentation] 量子補正モンテカルロ法による歪みInSb HEMTの遅延時間解析2012

    • Author(s)
      永井 佑太郎
    • Organizer
      電子情報通信学会ED研究会
    • Place of Presentation
      福井大学 文京キャンパス
    • Related Report
      2012 Annual Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Simulation of Nano-Scale III-V MOSFETs2011

    • Author(s)
      H. I. Fujishiro
    • Organizer
      BIT's 1st Annual World Congress of Nano-S&T(Nano-S&T 2011)
    • Place of Presentation
      Dalian, China.
    • Year and Date
      2011-10-23
    • Related Report
      2012 Final Research Report
  • [Presentation] 歪みInSb HEMTのモンテカルロ解析2011

    • Author(s)
      町田 史晴,佐藤 純,原 紳介,藤代 博記,遠藤 聡,渡邊 一世
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-08-29
    • Related Report
      2012 Final Research Report
  • [Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011

    • Author(s)
      長谷川 慶,本間 嵩広,原 紳介,藤代 博記
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学.
    • Year and Date
      2011-08-29
    • Related Report
      2012 Final Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

    • Author(s)
      S. Hara, F. Machida, J. Sato, H. I.Fujishiro, A. Endo, Y. Yamashita and I. Watanabe
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
    • Place of Presentation
      Nagaragawa Convention Center, Gifu.
    • Year and Date
      2011-08-28
    • Related Report
      2012 Final Research Report
  • [Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011

    • Author(s)
      佐藤 純, 町田 史晴, 原 紳介, 藤代 博記
    • Organizer
      電子情報通信学会ED研究会
    • Place of Presentation
      長岡技術科学大学
    • Year and Date
      2011-07-29
    • Related Report
      2012 Final Research Report
  • [Presentation] Strain Effects on Performances in InAs HEMTs2011

    • Author(s)
      F. Machida, H. Nishino, J. Sato. H. Watanabe, S. Haraand H. I. Fujishiro
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
    • Place of Presentation
      Berlin, Germany.
    • Year and Date
      2011-05-22
    • Related Report
      2012 Final Research Report
  • [Presentation] Comparative Study on Nano-Scale III-V MOSFETs with Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

    • Author(s)
      T. Homma, K. Hasegawa, H. Watanabe, S.Haraand H. I. Fujishiro
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Berlin, Germany
    • Year and Date
      2011-05-22
    • Related Report
      2012 Final Research Report
  • [Presentation] InAs HEMTの歪効果に関する理論的研究2011

    • Author(s)
      佐藤 純,町田 史晴,西野 啓之,原 紳介,藤代 博記
    • Organizer
      電子情報通信学会総合大会
    • Place of Presentation
      東京都市大
    • Related Report
      2012 Final Research Report
  • [Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011

    • Author(s)
      町田 史晴,佐藤 純,西野 啓之,原 紳介,藤代 博記
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大
    • Related Report
      2012 Final Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Simulation of Nano-Scale III-V MOSFETs2011

    • Author(s)
      Hiroki Fujishiro
    • Organizer
      BIT's 1st Annual World Congress of Nano-S&T
    • Place of Presentation
      World EXPO Center, Dalian, China
    • Related Report
      2011 Annual Research Report
  • [Presentation] 歪みInSb HEMTのモンテカルロ解析2011

    • Author(s)
      町田史晴, 佐藤純, 原紳介, 藤代博記, 遠藤聡, 渡邊一世
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Annual Research Report
  • [Presentation] 各種チャネル材料を用いた微細III-V MOSFETの特性比較2011

    • Author(s)
      長谷川慶, 本間嵩広, 原紳介, 藤代博記
    • Organizer
      2011年秋季第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Annual Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Simulation of InSb HEMTs Considering Strain Effects2011

    • Author(s)
      S.Hara, F.Machida, J Sato, H.I.Fujishiro, H.Endo, Y.Yamashita, I.Watanabe
    • Organizer
      9th Topical Workshop on Heterostructure Microelectronics (TWHM2011)
    • Place of Presentation
      Nagaragawa Convention Center, Gifu, Japan
    • Related Report
      2011 Annual Research Report
  • [Presentation] 量子補正モンテカルロ法による歪みInAs HEMTの解析2011

    • Author(s)
      佐藤純, 町田史晴, 原紳介, 藤代博記
    • Organizer
      電子情報通信学会ED研究会
    • Place of Presentation
      長岡技術科学大学マルチメディアシステムセンター
    • Related Report
      2011 Annual Research Report
  • [Presentation] Strain Effects on Performances in InAs HEMTs2011

    • Author(s)
      F.Machida, H.Nishino, J.Sato, H.Watanabe, S.Hara, H.I.Fujishiro
    • Organizer
      23rd International Conference on Indium Phosphide and Related Materials (IPRM2011)
    • Place of Presentation
      Maritim proArte Hotel, Berlin, Germany
    • Related Report
      2011 Annual Research Report
  • [Presentation] Comparative Study on Nano-Scale III-V MOSFETs witn Various Channel Materials Using Quantum-Corrected Monte Carlo Simulation2011

    • Author(s)
      T.Homma, K.Hasegawa, H.Watanabe, S.Hara, H.I.Fujishiro
    • Organizer
      38th International Symposium on Compound Semiconductors (ISCS2011)
    • Place of Presentation
      Maritim proArte Hotel, Berlin, Geriany
    • Related Report
      2011 Annual Research Report
  • [Presentation] InAs HEMTの歪効果に関する理論的研究2011

    • Author(s)
      佐藤純, 町田史晴, 西野啓之, 原紳介, 藤代博記
    • Organizer
      電子情報通信学会総合大会
    • Place of Presentation
      東京都市大学(但し震災によりDVDのみによる発表)
    • Related Report
      2010 Annual Research Report
  • [Presentation] InAs HEMTの歪効果に関するモンテカルロ解析2011

    • Author(s)
      町田史晴, 佐藤純, 西野啓之, 原紳介, 藤代博記
    • Organizer
      応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大(但し震災によりDVDのみによる発表)
    • Related Report
      2010 Annual Research Report
  • [Presentation] 量子補正モンテカルロ法によるInGaAs MOSFETの電子輸送解析2010

    • Author(s)
      藤代博記
    • Organizer
      電気学会調査専門委員会「グリーンITにおける化合物半導体電子デバイス」研究会
    • Place of Presentation
      法政大学マイクロ・ナノテクノロジーセンタ
    • Year and Date
      2010-11-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] 量子補正モンテカルロ法によるInGaAs MOSFETの電子輸送解析2010

    • Author(s)
      藤代博記
    • Organizer
      電気学会調査専門委員会「グリーンITにおける化合物半導体電子デバイス」研究会
    • Place of Presentation
      法政大学
    • Year and Date
      2010-11-12
    • Related Report
      2012 Final Research Report
  • [Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010

    • Author(s)
      H. I. Fujishiro, H. Watanabe, T. Homma and S. Hara
    • Organizer
      International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
    • Place of Presentation
      Shanghai, China.
    • Year and Date
      2010-11-03
    • Related Report
      2012 Final Research Report
  • [Presentation] Impact of Electron Rebound from Drain on Drive Current in Nano-Scale InGaAs MOSFETs2010

    • Author(s)
      H.I.Fujishiro, H.Watanabe, T.Homma, S.Hara
    • Organizer
      International Conference on Solid-State and Integrated Circuit Technology (ICSICT2010)
    • Place of Presentation
      InterContinental Hotel, Shanghai, China
    • Year and Date
      2010-11-03
    • Related Report
      2010 Annual Research Report
  • [Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の理論的解析2010

    • Author(s)
      渡邉 久巨,本間 嵩広,原 紳介,藤代 博記
    • Organizer
      電子情報通信学会ソサイエティ大会
    • Place of Presentation
      大阪府立大学
    • Year and Date
      2010-09-15
    • Related Report
      2012 Final Research Report 2010 Annual Research Report
  • [Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010

    • Author(s)
      本間 嵩広,渡邉 久巨,原 紳介,藤代 博記
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学.
    • Year and Date
      2010-09-14
    • Related Report
      2012 Final Research Report
  • [Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010

    • Author(s)
      町田 史晴,西野 啓之,原 紳介,藤代 博記
    • Organizer
      第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2012 Final Research Report
  • [Presentation] InGaAs MOSFETの駆動電流に及ぼす電子後方散乱の影響の解析2010

    • Author(s)
      本間嵩広, 渡邉久巨, 原紳介, 藤代博記
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] 格子整合系歪みInAs HEMTのモンテカルロ解析2010

    • Author(s)
      町田史晴, 西野啓之, 原紳介, 藤代博記
    • Organizer
      応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Year and Date
      2010-09-14
    • Related Report
      2010 Annual Research Report
  • [Presentation] InGaAs-ChannelMOSFETのキャリア輸送に関する理論的解析2010

    • Author(s)
      本間 嵩広,渡邉 久巨,原 紳介,藤代 博記
    • Organizer
      電子情報通信学会ED研究会
    • Place of Presentation
      北陸先端科学技術大学院大学.
    • Year and Date
      2010-06-18
    • Related Report
      2012 Final Research Report
  • [Presentation] InGaAs-Channel MOSFETのキャリア輸送に関する理論的解析2010

    • Author(s)
      本間嵩広, 渡邉久巨, 原紳介, 藤代博記
    • Organizer
      電子情報通信学会電子デバイス研究会
    • Place of Presentation
      北陸先端科学技術大学院大学
    • Year and Date
      2010-06-18
    • Related Report
      2010 Annual Research Report
  • [Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010

    • Author(s)
      H. Nishino, I. Kawahira, F. Machida, S. Haraand H. I. Fujishiro
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Kagawa.
    • Year and Date
      2010-06-02
    • Related Report
      2012 Final Research Report
  • [Presentation] Monte Carlo Study of Strain Effect on High Field Electron Transport in InAs and InSb2010

    • Author(s)
      H.Nishino, I.Kawahira, F.Machida, S.Hara, H.I.Fujishira
    • Organizer
      22nd International Conference on Indium Phosphide and Related Materials (IPRM2010)
    • Place of Presentation
      Takamatsu Symbol Tower, Kagawa, Japan
    • Year and Date
      2010-06-02
    • Related Report
      2010 Annual Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010

    • Author(s)
      H. Watanabe, T. Homma, T. Takegishi, Y. Hirasawa, Y. Hirata, S. Haraand H. I. Fujishiro
    • Organizer
      37th International Symposium on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      Kagawa.
    • Year and Date
      2010-06-01
    • Related Report
      2012 Final Research Report
  • [Presentation] Quantum-Corrected Monte Carlo Study of Nano-Scale InGaAs MOSFETs2010

    • Author(s)
      H.Watanabe, T.Homma, T.Takegishi, Y.Hirasawa, Y.Hirata, S.Hara, H.I.Fujishiro
    • Organizer
      37th International Symposium on Compound Semiconductors (ISCS2010)
    • Place of Presentation
      Takamatsu Symbol Tower, Kagawa, Japan
    • Year and Date
      2010-06-01
    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.te.noda.tus.ac.jp/pub/labs/fujisiro/index-j.html

    • Related Report
      2012 Final Research Report
  • [Remarks]

    • URL

      http://www.tus.ac.jp/fac_grad/p/index.php?37a7

    • Related Report
      2012 Final Research Report
  • [Remarks]

    • URL

      http://www.tus.ac.jp/fac_grad/p/index.php?A14247

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.te.noda.tus.ac.jp/pub/labs/fujisiro/index-j.html

    • Related Report
      2011 Annual Research Report
  • [Remarks]

    • URL

      http://www.tus.ac.jp/fac_grad/p/index.php?A14247

    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.te.noda.tus.ac.jp/pub/labs/fujisiro/index-j.html

    • Related Report
      2010 Annual Research Report

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Published: 2010-08-23   Modified: 2019-07-29  

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