| Project/Area Number |
22560346
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo University of Science |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
HARA Shinsuke 東京理科大学, 基礎工学部, 助教 (30434038)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | III-VMOSFET / III-V族化合物半導体 / 量子補正モンテカルロシミュレーション / バリスティック伝導 / 量子輸送 / CMOS ロードマップ / III－VMOSFET / III－V族化合物半導体 / 歪バンド構造 / CMOSロードマップ / MOSFET / InGaAs / InP |
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| Research Abstract |
The ability of the nano-scale MOSFETswith various III-V channel materials is investigated by using the quantum-corrected Monte Carlo (MC) simulation. The InGaAs channel shows the largest injection velocity v , because of the smallest electron effective mass inj m*. However, the average velocity vsis decreased by the alloy scatteringand the electron reinjection fromthe drain. Meanwhile, the gate capacitance Cgis smallest, and then the electron density n b becomes smallest. In the GaAs channel, the Lvalley conduction occurs because of the narrow Γ-Lvalley separation. Then, nbbecomes larger, but vinjbecomes smaller. The InP channel shows the smallest v because of the largest inj m*. However, the electron reinjection is less pronounced. Meanwhile, because of the largest Cg, n b becomes largest. Eventually, the InP channel shows the largest drain current Ids. The cutoff frequency fTof the nano-scale HEMTs with various III-V channel materials is also estimated as a indicator of high-speed capability.
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