Development of ZnO-based transistors operated in gigahertzfrequency range

• Project/Area Number: 22560353
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Osaka Institute of Technology
• Principal Investigator: SASA Shigehiko 大阪工業大学, 工学部, 教授 (50278561)
• Co-Investigator(Kenkyū-buntansha): MAEMOTO Toshihiko 大阪工業大学, 工学部, 准教授 (80280072)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000); Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
• Keywords: 酸化亜鉛 / マイクロ波 / 遮断周波数 / ギガヘルツ

Research Abstract

We developed high-performance ZnO-based FETs operated in gigahertz frequency range. First, a hetero-MIS transistor was employed to exhibit high-frequency performance. A very high cutoff frequency of as high as 1.7 GHz was obtained. Sputter-deposited ZnO thin-film transistors were proved to exhibit comparable high-frequency performance by measuring their static performance.

Research Products

• [Journal Article] Effects of post annealing on IZO thin-film transistor characteristics (2012)
  • Author(s): R. Morita, T. Maemoto, and S. Sasa
  • Journal Title: 2012 Int. Mtg. for Future of Electron Devices Kansai (IMFEDK) Pages: 118-119
  • DOI: 10.1109/imfedk.2012.6218610
• [Journal Article] 高性能酸化亜鉛系FETと酸化物デバイス応用の広がり (2012)
  • Author(s): 佐々誠彦,矢野満明,前元利彦,小池一歩,尾形健一
  • Journal Title: 電子情報通信学会誌 Volume: Vol.95-4 Pages: 289-293
  • NAID: 110009437460
  • Peer Reviewed
• [Journal Article] 高性能酸化亜鉛系 FET と酸化物デバイス応用の広がり (2012)
  • Author(s): 佐々誠彦，矢野満明，前元利彦，小池一歩，尾形健一
  • Journal Title: 電子情報通信学会誌 Volume: 95 Pages: 289-293
  • NAID: 110009437460
  • Peer Reviewed
• [Journal Article] Growth of Zinc Oxide Nanorods Via Aqueous Solution Process and Their Application for Biosensors (2011)
  • Author(s): 尾形,土橋,小池,佐々,井上,矢野
  • Journal Title: Journal of the Society of Materials Science, Japan Volume: 60 Issue: 11 Pages: 976-982
  • DOI: 10.2472/jsms.60.976
  • NAID: 130001396964
  • ISSN: 0514-5163, 1880-7488
  • Peer Reviewed
• [Journal Article] Irradiation Effect of 8MeV Protons on Single-Crystalline Zinc Oxide Films (2011)
  • Author(s): 小池,天野,青木,藤本,佐々,矢野,權田,石神,久米
  • Journal Title: Journal of the Society of Materials Science, Japan Volume: 60 Issue: 11 Pages: 988-993
  • DOI: 10.2472/jsms.60.988
  • NAID: 130001396966
  • ISSN: 0514-5163, 1880-7488
  • Peer Reviewed
• [Journal Article] Effects of N and P ion-implantation and post-annealing on single-crystalline ZnO films (2011)
  • Author(s): T. Aoki, R. Fujimoto, K. Koike, S. Sasa, M.Yano, S. Nagamachi, and K. Yoshida
  • Journal Title: 30th Electronic Materials Symposium Pages: 287-288
  • Peer Reviewed
• [Journal Article] Irradiation effect of 8 MeV protons on single-crystalline zinc oxide (2011)
  • Author(s): T. Aoki, R. Fujimoto, K. Koike, S. Sasa, M.Yano, S. Gonda, R. Ishigami, and K. Kume
  • Journal Title: Proc. of Int. Meeting for Future of Electron Devices Pages: 88-89
  • DOI: 10.1109/imfedk.2011.5944858
• [Journal Article] Radiation-proof characteristic ofZnO/ZnMgO HFETs (2011)
  • Author(s): T. Yabe, T. Aoki, T. Higashiyama, K. Koike, S. Sasa, M. Yano, S. Gonda, R. Ishigami, K. Kume
  • Journal Title: Proc. of Int. Meeting for Future of Electron Devices Pages: 90-91
  • DOI: 10.1109/imfedk.2011.5944859
• [Journal Article] Flexible Zinc Oxide Thin-Film Transistors using Oxide buffer layers on Polyethylene Napthalate Substrates (2011)
  • Author(s): T.Higaki, T.Tachibana, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
  • Journal Title: Proceedings of the 2011 International Meeting for Future of Electron Devices Pages: 92-93
  • DOI: 10.1109/imfedk.2011.5944860
  • Peer Reviewed
• [Journal Article] Development of ZnO Transistors and Their Application to Bio-Sensors (2011)
  • Author(s): 矢野満明, 小池一歩, 佐々誠彦, 前元利彦, 井上正崇
  • Journal Title: Journal of the Society of Materials Science, Japan Volume: 60 Issue: 5 Pages: 447-456
  • DOI: 10.2472/jsms.60.447
  • NAID: 130000861066
  • ISSN: 0514-5163, 1880-7488
  • Peer Reviewed
• [Journal Article] Microwave performance of ZnO/ZnMgO heterostructure field effect transistors (2011)
  • Author(s): S. Sasa, T. Maitani, Y. Furuya, T. Amano, K.Koike, M. Yano, and M. Inoue
  • Journal Title: Phys. Status Solidi A208 Volume: 208 Issue: 2 Pages: 449-452
  • DOI: 10.1002/pssa.201000509
  • Peer Reviewed
• [Journal Article] 酸化亜鉛トランジスターの開発とバイオセンサー応用 (2011)
  • Author(s): 矢野満明, 小池一歩, 佐々誠彦, 前元利彦, 井上正崇
  • Journal Title: 材料 Volume: 60 Pages: 447-456
  • NAID: 130000861066
  • Peer Reviewed
• [Journal Article] Flexible zinc oxide thin-film transistors using oxide buffer layers on polyethylene napthalate Substrates (2011)
  • Author(s): T.Higaki, T.Tachibana, Y.Kimura, T.Maemoto, S.Sasa, M.Inoue
  • Journal Title: Proc.of International Meeting for Future of Electron Devices Pages: 92-93
  • Peer Reviewed
• [Journal Article] Radiation-proof characteristic of ZnO/ZnMgO HFETs (2011)
  • Author(s): T.Yabe, T.Aoki, T.Higashiyama, K.Koike, S.Sasa, M.Yano, S.Gonda, R.Ishigami, K.Kume
  • Journal Title: Proc.of International Meeting for Future of Electron Devices Pages: 90-91
  • Peer Reviewed
• [Journal Article] Irradiation effect of 8MeV protons on single-crystalline zinc oxide (2011)
  • Author(s): T.Aoki, R.Fujimoto, K.Koike, S.Sasa, M.Yano, S.Gonda, R.Ishigami, K.Kume
  • Journal Title: Proc.of International Meeting for Future of Electron Devices Pages: 88-89
  • Peer Reviewed
• [Journal Article] Effects of N and P ion-implantation and post-annealing on single-crystalline ZnO films (2011)
  • Author(s): T.Aoki, R.Fujimoto, K.Koike, S.Sasa, M.Yano, S.Nagamachi, K.Yoshida
  • Journal Title: 30th Electronic Materials Sympo Pages: 287-288
  • Peer Reviewed
• [Journal Article] 水溶液プロセスによる酸化亜鉛ナノロッドの製作とバイオセンサへの応用 (2011)
  • Author(s): 尾形, 土橋, 小池, 佐々, 井上, 矢野
  • Journal Title: 材料 Volume: 60 Pages: 976-982
  • Peer Reviewed
• [Journal Article] 単結晶酸化亜鉛薄膜に対する8MeVプロトンの照射効果 (2011)
  • Author(s): 小池, 天野, 青木, 藤本, 佐々, 矢野, 權田, 石神, 久米
  • Journal Title: 材料 Volume: 60 Pages: 988-993
  • NAID: 130001396966
  • Peer Reviewed
• [Journal Article] Microwave performance of ZnO/ZnMgO heterostructure field effect transistors (2011)
  • Author(s): 佐々誠彦
  • Journal Title: Physica Status Solidi A Volume: 208 Pages: 449-452
  • Peer Reviewed
• [Presentation] フレキシブル酸化亜鉛透明薄膜トランジスタの開発 (2012)
  • Author(s): 孫屹,木村祐太,前元利彦,佐々誠彦
  • Organizer: 電気材料技術懇談会
  • Place of Presentation: 大阪
  • Year and Date: 2012-07-12
• [Presentation] Microwave Performance ofZnO/ZnMgO HFETs (2012)
  • Author(s): S. Sasa
  • Organizer: Int. Symp. onCompound Semiconductors
  • Place of Presentation: Takamatsu
  • Year and Date: 2012-06-02
• [Presentation] Effects of post annealing on IZO thin-film transistor characteristics (2012)
  • Author(s): R. Morita, T. Maemoto, and S. Sasa
  • Organizer: 2012 Int. Mtg. for Future of Electron Devices, Kansai (IMFEDK)
  • Place of Presentation: Osaka
  • Year and Date: 2012-05-10
• [Presentation] Zinc oxide-based biosensors (2011)
  • Author(s): M. Yano, K. Koike, K. Ogata, T. Nogami, S.Tanabe, S.
  • Organizer: 16th Semiconducting and Insulating Materials Conference
  • Place of Presentation: Stockholm, Sweden
  • Year and Date: 2011-06-22
• [Presentation] Zinc oxide-based biosensors (2011)
  • Author(s): M.Yano, K.Koike, K.Ogata, T.Nogami, S.Tanabe, S.Sasa
  • Organizer: 16^<th> Semiconducting and insulating Materials Conference (SIMC)
  • Place of Presentation: Stockholm, Sweden
  • Year and Date: 2011-06-22
• [Presentation] Microwave Performance of ZnO/ZnMgO HFETs (2010)
  • Author(s): 佐々誠彦
  • Organizer: Int.Symp.on Compound Semiconductors
  • Place of Presentation: 高松シンボルタワー(高松市)(招待講演)
  • Year and Date: 2010-06-02
• [Presentation] フレキシブル酸化亜鉛透明薄膜トランジスタの開発
  • Author(s): 孫屹，木村祐太，前元利彦，佐々誠彦
  • Organizer: 電気材料技術懇談会
  • Place of Presentation: 大阪市中央電気倶楽部（大阪）
• [Presentation] Effects of post annealing on IZO thin-film transistor characteristics
  • Author(s): R. Morita, T. Maemoto, and S. Sasa
  • Organizer: 2012 International Meeting for Future of Electron Devices, Kansai
  • Place of Presentation: 関西大学100周年記念会館（大阪）
• [Remarks]
  • URL: http://www.oit.ac.jp/www-ee/server/semicon/01_People.shtml