| Project/Area Number |
22560353
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
|
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| Research Institution | Osaka Institute of Technology |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
MAEMOTO Toshihiko 大阪工業大学, 工学部, 准教授 (80280072)
|
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| Project Period (FY) |
2010 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
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| Keywords | 酸化亜鉛 / マイクロ波 / 遮断周波数 / ギガヘルツ |
|---|
| Research Abstract |
We developed high-performance ZnO-based FETs operated in gigahertz frequency range. First, a hetero-MIS transistor was employed to exhibit high-frequency performance. A very high cutoff frequency of as high as 1.7 GHz was obtained. Sputter-deposited ZnO thin-film transistors were proved to exhibit comparable high-frequency performance by measuring their static performance.
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