| Budget Amount *help |
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Research Abstract |
This research project conducted theoretical studies on atomic diffusion of an anion or a cation in the solid oxide, which are important in the battery and passivation film, in terms of the electronic theory (Density Functional Theory). It was found that the Al diffusion in Al2O3 is governed by the dopant, Si or Ti, by obtaining 2-eV energy reduction near those elements. The oxide ion diffusion in the lanthanum silicates was successfully explained by the calculations; excellent agreement between the measured and the calculated diffusion barrier was obtained with the atomistic diffusion mechanism of the oxide ion.
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