| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2011: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Research Abstract |
In order to prepare the chemically active surface, we performed various methods, such as (1) the formation of thin silicon film, (2) plasma etching of silicon surface (removing native oxide and organic contamination). The silicon carbide thin film was formed using monomethylsilane gas on such the active surface with surveying its optimum condition. Based on the results, the silicon carbide thin film formation was tried on surfaces of aluminum, stainless steel and polyimide.
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