Direct patterningof oxide films by coplanar type surface discharge
Project/Area Number |
22560719
|
Research Category |
Grant-in-Aid for Scientific Research (C)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Material processing/treatments
|
Research Institution | Shizuoka University |
Principal Investigator |
|
Co-Investigator(Kenkyū-buntansha) |
MURAKAMI Kenji 静岡大学, 電子工学研究所, 准教授 (30182091)
|
Project Period (FY) |
2010 – 2012
|
Project Status |
Completed (Fiscal Year 2012)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
|
Keywords | 沿面放電 / プラズマ / 薄膜 / 酸化亜鉛 / 製膜 / 酸化スズ / 平面プラズマ / ダイレクトパターニング |
Research Abstract |
Various techniques to prepare thin films have been reported during the decades. However, most of them basically require a high substrate temperature and/or a vacuum process. A novel thin film synthesis technique at low substrate temperature under ambient pressure should be developed. We focused on a coplanar surface discharge technique to meet the demand. Coplanar surface discharge is categorized to a dielectric barrier discharge in which high-energy plasma runs on the surface of an insulating substrate. In this study, we developed a coplanar surface discharge technique to prepare zinc oxide films.
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Report
(4 results)
Research Products
(67 results)