Development of InGaSb hole localized quantum dot structure for quantum communication

• Project/Area Number: 22656070
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Muroran Institute of Technology
• Principal Investigator: UESUGI Katsuhiro 室蘭工業大学, 工学研究科, 准教授 (70261352)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥3,640,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥540,000); Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,300,000)
• Keywords: 薄膜 / 量子構造 / 量子ドット / 自己組織化 / 選択成長 / エピタキシャル

Research Abstract

Type II hole localized quantum dot structures were successfully grown on GaAs(001) substrates by metal-organic molecular beam epitaxy (MOMBE). Submicron-sized GaAsSb dots with low density of 10^6 cm^<-2> were fabricated by the reaction between MO precursors and surface atoms. The facet structures can be fabricated by the selective surface etching using TDMASb. They were found to be laterally surrounded by {111} and {110} facets together with circular (001) facet (120nm in diameter) at a convex curved region. On the other hand, GaAs nano-ring structures with ～6 nm in height and ～400 nm in diameter were fabricated by the etching of the submicron-sized dots. Quantum dot pair was grown selectively on the facet of nano-ring structure. This result suggests that the quantum dots were produced preferentially on the (411)B facet. We demonstrate new fabrication processes of hole localized quantum dot structures through control of dot densities and generation positions.

Research Products

• [Presentation] Hetero-epitaxial growth process of type-II GaSb/GaAs quantum dot system by metal-organic molecular beam epitaxy (2012)
  • Author(s): Katsuhiro Uesugi, Masataka Sato, Kohei Miyazawa, Takanari Yumi and Hisashi Fukuda
  • Organizer: 2012 Material Research Society Fall Meeting & Exhibit
  • Place of Presentation: ハインズコンベンションセンター(アメリカ,ボストン)
  • Year and Date: 2012-11-27
• [Presentation] Growth of self-organized GaAsSb submicron dots on GaAs by metal-organic molecular beam epitaxy (2012)
  • Author(s): Takanari Yumi, Kohei Miyazawa, Masataka Sato, and Katsuhiro Uesugi
  • Organizer: International Union of Material Research Society-International Conference in Asia 2012
  • Place of Presentation: BEXCO(韓国,プサン)
  • Year and Date: 2012-08-28
• [Presentation] Growth of self-organized GaAsSb submicron dots on GaAs by metal-organic molecular beam epitaxy (2012)
  • Author(s): Takanari Yumi, Kohei Miyazawa, Masataka Sato, and Katsuhiro Uesugi
  • Organizer: International Union of Materials Research Society-International Conference in Asia 2012 (IUMRS-ICA 2012)
  • Place of Presentation: BEXCO, Busan, Korea
• [Presentation] Hetero-epitaxial growth process of type-II GaSb/GaAs quantum dot system by metal-organic molecular beam epitaxy (2012)
  • Author(s): Katsuhiro Uesugi, Masataka Sato, Kohei Miyazawa, Takanari Yumi, and Hisashi Fukuda
  • Organizer: 2012 Materials Research Society Fall Meeting & Exhibit
  • Place of Presentation: Hynes Convention Center, Boston, Massachusetts
• [Presentation] Selective Growth of GaSb Quantum Dots on GaAs Nano-ring Structures by Metalorganic Molecular Beam Epitaxy (2011)
  • Author(s): Katsuhiro Uesugi, Takanari Yumi, Tsuyoshi Usui, and Afishah Alias
  • Organizer: 12th IUMRS International Conference in Asia
  • Place of Presentation: 台北世界貿易中心南港展覧館(台湾)
  • Year and Date: 2011-09-20
• [Presentation] Fabrication of GaSb submicron islands on GaAs using trisdimethylaminoantimony (2011)
  • Author(s): Katsuhiro Uesugi, Tsuyoshi Usui, Takanari Yumi and Afishah Alias
  • Organizer: International Conference on Materials for Advanced Technologies 2011
  • Place of Presentation: サンテックシンガポール国際会議場(シンガポール)
  • Year and Date: 2011-06-28
• [Presentation] Fabrication of GaSb submicron islands on GaAs using trisdimethylamin oantimony (2011)
  • Author(s): 植杉克弘
  • Organizer: International Conference on Materials for Advanced Technologies 2011
  • Place of Presentation: サンテックシンガポール国際会議場(シンガポール)
  • Year and Date: 2011-06-28
• [Presentation] MOMBE法によるサブミクロンサイズのGaSbメサ構造の作製 (2011)
  • Author(s): 臼井強志,弓 貴成,植杉克弘
  • Organizer: 第46回応用物理学会北海道支部学術講演会
  • Place of Presentation: 室蘭工業大学 (北海道)
  • Year and Date: 2011-01-08
• [Presentation] MOMBE法によるサブミクロンサイズのGaSbメサ構造の作製 (2011)
  • Author(s): 植杉克弘
  • Organizer: 第46回応用物理学会北海道支部学術講演会
  • Place of Presentation: 室蘭工業大学(北海道)
  • Year and Date: 2011-01-08
• [Presentation] Self-limiting growth of submicron-sized GaSb dots on GaAs(001) surface by metalorganic molecular-beam epitaxy (2010)
  • Author(s): Katsuhiro Uesugi, Tsuyoshi Usui and Afishah Alias
  • Organizer: The 16th International Conference on Crystal Growth
  • Place of Presentation: 北京国際会議場 (中国,北京)
  • Year and Date: 2010-08-12
• [Presentation] Self-limiting growth of submicron-sized GaSb dots on GaAs(001)surface by metalorganic molecular-beam epitaxy (2010)
  • Author(s): 植杉克弘
  • Organizer: The 16th International Conference on Crystal Growth
  • Place of Presentation: 北京国際会議場(中国,北京)
  • Year and Date: 2010-08-12