| Project/Area Number |
22656075
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | University of Hyogo |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
SHIMIZU Masaru 兵庫県立大学, 大学院・工学研究科, 教授 (30154305)
NAKASHIMA Seiji 兵庫県立大学, 大学院・工学研究科, 助教 (80552702)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | ビスマスフェライト / 絶縁性 / リーク電流 / 組成制御 / 価数制御 / BiFeO_3 |
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| Research Abstract |
We investigated leakage mechanisms in composition-, valence-and domain structure-controlled epitaxial BiFeO_3 thin films prepared by dual ion beam sputtering. The leakage current was controlled by Poole-Frenkel emission independently of the composition ; AFM revealed the presence ofμm-sized local leakage spots with high conductivity. These results suggest that uniformity in composition and a large amount of charged traps can be the origin of a larger leakage than that in Pb-based ferroelectric thin films. Therefore, an improvement in composition uniformity and a decrease in charge traps will be indispensable to reduce the leakage in BiFeO_3 thin films.
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