| Budget Amount *help |
¥3,660,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥660,000)
Fiscal Year 2012: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥800,000 (Direct Cost: ¥800,000)
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| Research Abstract |
Elastic strain can affect the device properties through the band edge shifts caused by the deformation potential. Ordinarily this effect is very small on electron devices. In this study, we propose to use an active transmission line periodically loaded with resonant tunneling diode pairs to strengthen these effects. In this configuration, surface acoustic waves can affect the transmission line through the line, which enhancesthe effects. We have investigated fabrication process and effective circuit configuration for this aim, and have clarified the promising potential
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