Development of multi-phase bonding for wafer level processing of 3D system in package
| Project/Area Number |
22656083
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Osaka University |
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Principal Investigator |
FUJIMOTO Kouzou 大阪大学, 大学院・工学研究科, 教授 (70135664)
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| Co-Investigator(Kenkyū-buntansha) |
FUKUMOTO Shinji 大阪大学, 大学院・工学研究科, 准教授 (60275310)
MATSUSHIMA Michiya 大阪大学, 大学院・工学研究科, 助教 (90403154)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥300,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | 低温接合 / 銅 / 高融点金属間化合物 / マイクロ接合 / 低融点金属 / 固液反応 / カーケンダルボイド / 偏析 / Zn添加 / 三次元ウェハレベル実装 / マルチフェイズ接合 / 3次元実装 / MEMS実装 / 多層薄膜 / 信頼性 |
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| Research Abstract |
Recently, high performance copper joint is really needed to be used at high temperature with increasing demand in high density packaging technology. The bonding process must be carried out less than 300°C. In the present study, Cu and Sn were interlaminated at the faying surface, which produced multi-phases interlayer during the bonding process. The conclusive bond layer consisted of Cu3Sn which is high melting point intermetallic compound. Moreover, the voids could be reduced by addition of tiny bit of zinc.
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Report
(3 results)
Research Products
(16 results)
