| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥600,000)
Fiscal Year 2012: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥1,100,000 (Direct Cost: ¥1,100,000)
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| Research Abstract |
Applications of ionic conduction in defect-induced-oxide thin films for electrical devices were investigated. First, a proton-conducting electrolyte for an all-dry-processed electrochromic cell was demonstrated by using the hydrogenated-Ta2O5 films prepared by hydrogen-introduced sputtering, even though nano-structured NiO thin films did not show any expected ionic conductions. Next, voltage-induced nonvolatile change of magnetic anisotropy was demonstrated for TiO2-δ/ferromagnetic CoFeB stacks, by means of the oxygen vacancy transport in TiO2-δ layer. This result indicates a possible development of a new type of magnetic device driven by ionic conduction in oxides.
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