Development of on-demand single photon emitter by precisive charge number controlling on semiconductor nanoparticles
| Project/Area Number |
22681012
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2010-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥20,020,000 (Direct Cost: ¥15,400,000、Indirect Cost: ¥4,620,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2011: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2010: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
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| Keywords | 単一光子 / ナノ粒子 / 単一電子 / 単一電子トランジスタ / 結晶欠陥 / 半導体ナノ粒子 / 固浸レンズ / ナノワイヤ / 微細構造 / スピン / シリコン / ゲルマニウム / 量子ドット / 円偏光 / スピン注入 |
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| Research Abstract |
Aim of this study was verification of on-demand single photon emitting devices by controlling the number of electrons and refractive index of single photon emitter. We have been headed for on-demand single photon emitter with electrical spins by using colloidal semiconductor, crystalline defects in Si, and direct transition of Ge as single photon source with nanogap electrodes structure. We have demonstrated (1) single electron transistor with nanogap electrodes and colloidal nanoparticles, (2) electroluminescence and optical amplification by silicon defect engineering, (3) construction of confocal microscope with high numerical aperture by using solid immersion lens, (4) optical spin injection into direct transition of Ge-based structure.
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Report
(5 results)
Research Products
(67 results)
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[Presentation] シリコン結晶欠陥の光利得2010
Author(s)
安武裕輔, 浅場智也, 寺田陽祐, 田名網宣成, 深津 晋
Organizer
第71回応用物理学会学術講演会
Place of Presentation
長崎大(長崎)
Year and Date
2010-09-17
Related Report
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