Fabrication of single-atom devices by single-atom doping method

• Project/Area Number: 22681020
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Microdevices/Nanodevices
• Research Institution: National Institute of Advanced Industrial Science and Technology (2012); Waseda University (2010-2011)
• Principal Investigator: SHINADA Takahiro 独立行政法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究部門付 (30329099)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥21,970,000 (Direct Cost: ¥16,900,000、Indirect Cost: ¥5,070,000); Fiscal Year 2012: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2011: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000); Fiscal Year 2010: ¥11,310,000 (Direct Cost: ¥8,700,000、Indirect Cost: ¥2,610,000)
• Keywords: 単一原子デバイス / 単一ドーパントデバイス / 単一原子ドーピング法 / ドーピング / イオン注入 / 集束イオンビーム / シリコンデバイス / 量子デバイス

Research Abstract

The true potential of semiconductors, the basic material in transistors, has been realized by adding dopants to tailor their electronic properties; this has conventionally been achieved through a doping process. In the immediate future, scaled-down transi

Research Products

• [Journal Article] Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor (2012)
  • Author(s): E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada
  • Journal Title: Nature Nanotechnology Volume: 7 Pages: 442-447
• [Journal Article] Anderson-Mott transition in arrays of a few dopant atoms in a silicon transistor (2012)
  • Author(s): Enrico Prati
  • Journal Title: NATURE NANOTECHNOLOGY Volume: 7 Issue: 7 Pages: 443-447
  • DOI: 10.1038/nnano.2012.94
  • Peer Reviewed
• [Journal Article] Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position (2012)
  • Author(s): M. Hori, K. Taira, A. Komatsubara, K. Kumagai, Y. Ono, T. Tanii, T. Endoh, T. Shinada
  • Journal Title: Applied Physics Letter Volume: 101 Issue: 1 Pages: 13503-13503
  • DOI: 10.1063/1.4733289
  • Peer Reviewed
• [Journal Article] Quantum transport in deterministically implanted single-donors in Si FETs (2011)
  • Author(s): T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati
  • Journal Title: Tech. Dig. of International Electron Devices Meeting (IEDM) Volume: 697
• [Journal Article] Impact of a few Dopant Positions Controlled by Deterministic Single-Ion Doping on the Transconductance of Field-Effect Transistors (2011)
  • Author(s): M. Hori, T. Shinada, Y. Ono, A.Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari
  • Journal Title: Appl. Phys. Lett. Volume: 99 Pages: 62103-62103
• [Journal Article] Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping (2011)
  • Author(s): M. Hori, T. Shinada, K. Taira, A. Komatsubara, Y. Ono, T. Tanii, T. Endoh, I. Ohdomari
  • Journal Title: Appl. Phys. Express Volume: 4 Pages: 46501-46501
  • NAID: 10028210001
• [Journal Article] Enhancing Single-Ion Detection Efficiency by Applying Substrate Bias Voltage for Deterministic Single-Ion Doping (2011)
  • Author(s): M.Hori, T.Shinada, et al
  • Journal Title: Applied Physics Express Volume: 4 Issue: 4 Pages: 046501-046501
  • DOI: 10.1143/apex.4.046501
  • NAID: 10028210001
  • Peer Reviewed
• [Journal Article] Quantum transport in deterministically implanted single-donors in Si FETs (2011)
  • Author(s): T.Shinada, et al
  • Journal Title: Tech.Dig.of International Electron Devices Meeting (IEDM) Pages: 697-700
  • Peer Reviewed
• [Journal Article] Deterministicドープシリコンデバイスと量子輸送現象 (2011)
  • Author(s): 品田賢宏, 他
  • Journal Title: 信学技報 Volume: ED2011-142/SDM2011-159 Pages: 1-5
  • NAID: 10031104769
• [Journal Article] 単一原子ドーピング法と離散的ドーパントデバイス評価 (2011)
  • Author(s): 品田賢宏、堀匡寛、平圭吾、小松原彰、谷井孝至、大泊巌、小野行徳、遠藤哲郎
  • Journal Title: 電気学会 Volume: EDD-11-035 Pages: 1-4
  • NAID: 10027975634
• [Journal Article] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method (2010)
  • Author(s): T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari
  • Journal Title: Tech. Dig. of International Electron Devices Meeting (IEDM) Volume: 592
• [Journal Article] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method (2010)
  • Author(s): T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari
  • Journal Title: Proc. of SPIE Volume: 7637 Pages: 763712-763712
• [Journal Article] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method (2010)
  • Author(s): T.Shinada, M.Hori, Y.Ono, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, I.Ohdomari
  • Journal Title: Proc.of SPIE Volume: 7637
• [Journal Article] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method (2010)
  • Author(s): T.Shinada, M.Hori, Y.Ono, K.Taira, A.Komatsubara, T.Tanii, T.Endoh, I.Ohdomari
  • Journal Title: Tech.Dig.of International Electron Devices Meeting (IEDM) Pages: 592-595
  • Peer Reviewed
• [Presentation] ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製II (2013)
  • Author(s): 田村崇人,小松原 彰,寺地 徳之,小野田 忍,大島 武
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学(神奈川県)
  • Year and Date: 2013-03-27
• [Presentation] 単一イオン注入技術シリコン/ダイヤモンドへの決定論的ドーピングによる量子物性制御 (2013)
  • Author(s): 品田賢宏
  • Organizer: 日本学術振興会「結晶加工と評価技術」第145委員会
  • Place of Presentation: 明治大学(東京都)
  • Year and Date: 2013-01-21
• [Presentation] Fabrication of the ordered array of optical centers in diamond by low energy ion implantation (2012)
  • Author(s): A. Komatsubara, Tokuyuki Teraji, Masahiro Hori, Kuninori Kumagai, Shuto Tamura, Takeshi Ohshima, Shinobu Onoda, Takashi Yamamoto, Christoph Muller, Boris Naydenov,Liam McGuinness, Fedor Jelezko,Takashi Tanii, Takahiro Shinada, Junichi Isoya
  • Organizer: International Microprocesses and Nanotechnology Conference (MNC) 2012
  • Place of Presentation: Kobe
  • Year and Date: 2012-11-02
• [Presentation] シングルイオン注入法を用いた単一ドーパント原子を有するトランジスタの作製と低温伝導特性評価 (2012)
  • Author(s): 堀 匡寛,Enrico Prati,熊谷国憲,Filippo Guagliardo,Giorgio Ferrari,谷井孝至,小野行徳,品田賢宏
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学(愛媛県)
  • Year and Date: 2012-09-14
• [Presentation] ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製 (2012)
  • Author(s): 小松原彰,堀 匡寛, 熊谷国憲,谷井孝至,寺地 徳之,磯谷 順一, 品田賢宏
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学(愛媛県)
  • Year and Date: 2012-09-13
• [Presentation] Quantum Transport Property in FETs with Deterministically Implanted Single-Arsenic Ions Using Single-ion Implantation (2012)
  • Author(s): M. Hori, E. Prati, F. Guagliarldo, G. Ferrari, K. Kumagai, T. Tanii, Y. Ono,T. Shinada
  • Organizer: 2012 IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Hawaii, US
  • Year and Date: 2012-06-11
• [Presentation] Deterministic doping to Si and diamond for nanoelectronics (2012)
  • Author(s): T. Shinada
  • Organizer: International Nanotechnology Conference (INC8)
  • Place of Presentation: Tsukuba
  • Year and Date: 2012-05-08
• [Presentation] ヒ素イオン注入による注入イオンのストラグリング抑制効果の評価 (2012)
  • Author(s): 熊谷国憲, 品田賢宏, 他
  • Organizer: 第59回応用物理学関連連合講演会
  • Place of Presentation: 早稲田大学(東京)
  • Year and Date: 2012-03-18
• [Presentation] 単一イオン注入法を用いたヒ素(As)イオンの位置と個数を制御したトランジスタの低温伝導特性評価 (2012)
  • Author(s): 堀匡寛, 品田賢宏, 他
  • Organizer: 第59回応用物理学関連連合講演会
  • Place of Presentation: 早稲田大学(東京)
  • Year and Date: 2012-03-18
• [Presentation] ダイヤモンドへの低エネルギーイオン注入による発光センターの作製 (2012)
  • Author(s): 小松原彰, 品田賢宏, 他
  • Organizer: 第59回応用物理学関連連合講演会
  • Place of Presentation: 早稲田大学(東京)
  • Year and Date: 2012-03-17
• [Presentation] Deterministicドープシリコンデバイスと量子輸送現象 (2012)
  • Author(s): 品田賢宏, 他
  • Organizer: 電子情報通信学会電子デバイス・シリコン材料デバイス合同研究会
  • Place of Presentation: 北海道大学(北海道)(招待講演)
  • Year and Date: 2012-02-07
• [Presentation] Single ion implantation as a method for local doping (2012)
  • Author(s): T. Shinada, M. Hori, K. Kumagai, F. Guagliardo, G. Ferrari, Y. Ono, E. Prati
  • Organizer: International Conference on Ion Implantation Technology
  • Place of Presentation: Valladolid, Spain
• [Presentation] Quantum transport in deterministically implanted single-donors in Si FETs (2011)
  • Author(s): T.Shinada, et al
  • Organizer: International Electron Devices Meeting (IEDM)
  • Place of Presentation: Washington DC(米国)
  • Year and Date: 2011-12-07
• [Presentation] Impact of a few Dopant Positions Controlled by Deterministic Single-Ion Doping on Transconductance of FETs (2011)
  • Author(s): M.Hori, T.Shinada, et al
  • Organizer: TECHCON2011
  • Place of Presentation: Austin(米国)
  • Year and Date: 2011-09-12
• [Presentation] 単一イオン注入法による位置と個数を制御したデバイスの低温伝導特性評価 (2011)
  • Author(s): 堀匡寛, 品田賢宏, 他
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形)
  • Year and Date: 2011-09-01
• [Presentation] 砒素イオン注入によるドーパント位置制御効果 (2011)
  • Author(s): 小松原彰, 品田賢宏, 他
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形)
  • Year and Date: 2011-09-01
• [Presentation] 単一イオン注入プロセス:1nm精度への挑戦 (2011)
  • Author(s): 品田賢宏, 他
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形)
  • Year and Date: 2011-08-29
• [Presentation] Control of Dopant Distribution by Single-Ion Implantation and its Impact on Transconductance of FETs (2011)
  • Author(s): T.Shinada, et al
  • Organizer: 2011 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2011)
  • Place of Presentation: Daejeon(韓国)(招待講演)
  • Year and Date: 2011-06-24
• [Presentation] Quantum transport in a deterministically implanted phosphorous array in a Silicon nanostructure (2011)
  • Author(s): E.Prati, T.Shinada, et al
  • Organizer: 2011 Silicon Nanoelectronics Workshop
  • Place of Presentation: リーガロイヤルホテル(京都府)
  • Year and Date: 2011-06-13
• [Presentation] Impact of a few Dopant Positions Controlled by Single-Ion Implantation on Transconductance of FETs (2011)
  • Author(s): M.Hori, T.Shinada, et al
  • Organizer: International Workshop on Junction Technology (IWJT 2011)
  • Place of Presentation: 京都大学(京都府)
  • Year and Date: 2011-06-10
• [Presentation] ドーパント位置制御による電界効果トランジスタの相互コンダクタンス評価 (2011)
  • Author(s): 堀匡寛, 品田賢宏, 平圭吾, 小松原彰, 小野行徳, 谷井孝至, 遠藤哲郎, 大泊巌
  • Organizer: 第58回応用物理学関連連合講演会
  • Place of Presentation: 神奈川
  • Year and Date: 2011-03-24
• [Presentation] 単一原子ドーピング法と離散的ドーパントデバイス評価 (2011)
  • Author(s): 品田賢宏, 堀匡寛, 平圭吾, 小松原彰, 谷井孝至, 大泊巌, 小野行徳, 遠藤哲郎
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 群馬
  • Year and Date: 2011-03-01
• [Presentation] Quantum transport in deterministically implanted single-donors in Si FETs (2011)
  • Author(s): T. Shinada, M. Hori, F. Guagliardo, G. Ferrari, A. Komatubara, K. Kumagai, T. Tanii, T. Endo, Y. Ono, E. Prati
  • Organizer: IEEE International Electron Devices Meeting (IEDM)
  • Place of Presentation: Washington, DC, USA
• [Presentation] Impact of a few Dopant Positions Controlled by Deterministic Single-Ion Doping on Transconductance of FETs (2011)
  • Author(s): M. Hori, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari, T. Shinada
  • Organizer: TECHCON2011
  • Place of Presentation: Austin, Texas, USA
• [Presentation] 単一イオン注入プロセス: 1nm 精度への挑戦 (2011)
  • Author(s): 品田賢宏, 堀匡寛, 小野行徳, 田部道晴
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
• [Presentation] 単一イオン注入法による位置と個数を制御したデバイスの低温伝導特性評価 (2011)
  • Author(s): 堀 匡 寛 , Enrico Prati, Filippo Guagliardo, 小野行徳, 小松原彰, 熊谷国憲, 谷井孝至, 遠藤哲郎, 大泊 巌, 品田賢宏
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学 (山形県)
• [Presentation] 砒素イオン注入によるドーパント位置制御効果 (2011)
  • Author(s): 小松原 彰, 堀 匡寛, 熊谷国憲, 小野行徳, 谷井孝至, 遠藤哲郎, 大泊 巌, 品田賢宏
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
• [Presentation] Control of Dopant Distribution by Single-Ion Implantation and its Impact on Transconductance of FETs (2011)
  • Author(s): T. Shinada, M. Hori, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari
  • Organizer: 2011 Asia-Pacific Workshop on Fundamentals and Applications ofAdvanced Semiconductor Devices (AWAD 2011)
• [Presentation] Quantum transport in a deterministically implanted phosphorous array in a Silicon nanostructure (2011)
  • Author(s): E. Prati, M. Hori, F. Guagliarldo, G. Ferrari, T. Shinada
  • Organizer: 2011 Silicon Nanoelectronics Workshop
  • Place of Presentation: Kyoto, Japan
• [Presentation] Impact of a few Dopant Positions Controlled by Single-Ion Implantation on Transconductance of FETs (2011)
  • Author(s): M. Hori, Y. Ono, A. Komatsubara, K. Kumagai, T. Tanii, T. Endoh, I. Ohdomari, T. Shinada
  • Organizer: International Workshop on Junction Technology (IWJT 2011)
  • Place of Presentation: Kyoto, Japan
• [Presentation] ドーパント位置制御による電界効果トランジスタの相互コンダクタンス評価 (2011)
  • Author(s): 堀匡寛, 品田賢宏, 平圭吾, 小松原彰, 小野行徳, 谷井孝至, 遠藤哲郎, 大泊巌
  • Organizer: 第58回応用物理学関連連合講演会
  • Place of Presentation: 神奈川大学(神奈川県) .
• [Presentation] 単一原子ドーピング法と離散的ドーパントデバイス評価 (2011)
  • Author(s): 品田賢宏, 堀匡寛, 平圭吾, 小松原彰, 谷井孝至, 大泊巌, 小野行徳, 遠藤哲郎
  • Organizer: 電気学会電子デバイス研究会
  • Place of Presentation: 群馬県
• [Presentation] 基板バイアス印加による単一イオン個数制御性の検証 (2010)
  • Author(s): 堀匡寛, 小松原彰, 品田賢宏, 小野行徳, 平圭吾, 谷井孝至, 遠藤哲郎, 大泊巌
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-14
• [Presentation] Enhancement of Electron Transport Property in FET with Asymmetric Ordered Dopant Distribution (2010)
  • Author(s): M. Hori, T. Shinada, K. Taira, T. Tanii, Y. Ono, T. Endoh, I. Ohdomari
  • Organizer: 18th International Conference on Ion Implantation Technology (IIT2010)
  • Place of Presentation: Kyoto
  • Year and Date: 2010-06-07
• [Presentation] Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method (2010)
  • Author(s): T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, T. Tanii, T. Endoh, I. Ohdomari
  • Organizer: International Electron Devices Meeting (IEDM)
  • Place of Presentation: San Francisco, USA
• [Presentation] Improving Single Dopant Detection Efficiency by Controlling Substrate Bias in Single Ion Implantation Method (2010)
  • Author(s): M. Hori, T. Shinada, A. Komatsubara, K. Taira, T. Tanii, Y. Ono, T. Endoh, I. Ohdomari
  • Organizer: TECHCON2010
  • Place of Presentation: Austin, Texas, USA
• [Presentation] 基板バイアス印加による単一イオン個数制御性の検証 (2010)
  • Author(s): 堀 匡寛, 小松原 彰, 品田賢宏, 小野行徳, 平 圭吾, 谷井孝至, 遠藤哲郎, 大泊巌
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学(長崎県)
• [Presentation] Performance evaluation of transistors with discrete dopants by single-ion doping method (2010)
  • Author(s): T. Shinada, M. Hori, K. Taira, T. Tanii, Y. Ono, T. Endoh, I. Ohdomari
  • Organizer: 21st International Conference on the Application of Accelerators in Research and Industry (CAARI2010)
  • Place of Presentation: Fort Worth, TX, USA
• [Presentation] Deterministic doping for nanoelctronics and the application to biological system
  • Author(s): T. Shinada, M. Hori, A. Komatsubara, K. Kumagai, Y. Sakaguchi, T. Tanii, Y. Ono, F. Guagiardo, G. Ferrari, E. Prati
  • Organizer: Energy Materials Nanotechnology Meeting
  • Place of Presentation: Orlando, US
• [Presentation] Deterministic doping for nanoelctronics and the application to biological system
  • Author(s): Takahiro Shinada
  • Organizer: 2012 Energy Materials Nanotechnology (EMN)
  • Place of Presentation: Florida, US
  • Invited
• [Presentation] Single ion implantation as a method for local doping
  • Author(s): Takahiro Shinada
  • Organizer: 2012 International Conference on Ion Implantation Technology (IIT)
  • Place of Presentation: Valladolid, Spain
  • Invited
• [Presentation] 単一イオン注入技術シリコン／ダイヤモンドへの決定論的ドーピングによる量子物性制御
  • Author(s): Takahiro Shinada
  • Organizer: 日本学術振興会「結晶加工と評価技術」第１４５委員会
  • Place of Presentation: 東京
  • Invited
• [Presentation] Deterministic doping for nanoelctronics and the application to biological system
  • Author(s): Takahiro Shinada
  • Organizer: MANA International Symposium 2013
  • Place of Presentation: Tsukuba
  • Invited
• [Presentation] Deterministic doping to Si and diamond for nanoelectronics
  • Author(s): Takahiro Shinada
  • Organizer: 8th International Nanotechnology Conference (INC8)
  • Place of Presentation: Tsukuba
• [Presentation] Fabrication of the ordered array of optical centers in diamond by low energy ion implantation
  • Author(s): Akira Komatsubara
  • Organizer: International Microprocesses and Nanotechnology Conference (MNC) 2012
  • Place of Presentation: Kobe
• [Presentation] Quantum Transport Property in FETs with Deterministically Implanted Single-Arsenic Ions Using Single-ion Implantation
  • Author(s): Masahiro Hori
  • Organizer: 2012 IEEE Silicon Nanoelectronics Workshop
  • Place of Presentation: Hawaii, US
• [Presentation] シングルイオン注入法を用いた単一ドーパント原子を有するトランジスタの作製と低温伝導特性評価
  • Author(s): 堀 匡寛
  • Organizer: 第 73 回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製
  • Author(s): 小松原彰
  • Organizer: 第 73 回応用物理学会学術講演会
  • Place of Presentation: 松山
• [Presentation] ダイヤモンドへの低エネルギーイオン注入による発光センターの規則配列作製II
  • Author(s): 田村崇人
  • Organizer: 第 60 回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川
• [Book] Single Atom Nanoelectronics (2013)
  • Author(s): E. Prati and T. Shinada Editors
  • Publisher: Pan Stanford Publishing
• [Remarks] 早稲田大学ニュースリリース「単一ドーパント原子が制御された量子デバイスを開発高等研究所・品田賢宏准教授らの国際共同研究チーム」 (2011年12月8日)
  • URL: http://www.waseda.jp/jp/news11/111208_sad.html
• [Remarks] 日経エレクトロニクス「 【IEDM】数十個のチャネル不純物の分布が MOS トランジスタ特性に与える影響,早稲田大学などが実デバイスで検証」 (2010年12月9日)
  • URL: http://techon.nikkeibp.co.jp/article/NEWS/20101202/187858/?ST=SCR
• [Remarks] 早稲田大学プレスリリース「高等研究所・品田賢宏准教授らがドーパント分布を制御し、トランジスタ特性を向上 単一ドーパント原子が制御された究極のデバイス開発に道」(2010 年 12 月 9 日)
  • URL: http://www.waseda.jp/jp/news10/101208_sad.html
• [Patent(Industrial Property Rights)] 半導体装置 (2012)
  • Inventor(s): 品田賢宏, 小野行徳
  • Industrial Property Rights Holder: 早稲田大学,NTT
  • Filing Date: 2012
• [Patent(Industrial Property Rights)] イオン注入方法 (2011)
  • Inventor(s): 品田賢宏, 小野行徳
  • Industrial Property Rights Holder: 早稲田大学,NTT
  • Industrial Property Number: 2011-096900
  • Filing Date: 2011
• [Patent(Industrial Property Rights)] 半導体装置 (2010)
  • Inventor(s): 品田賢宏, 小野行徳
  • Industrial Property Rights Holder: 早稲田大学,NTT
  • Industrial Property Number: 2010-141686
  • Filing Date: 2010