Epitaxial growth of SiGe films on ferromagnetic alloys and its application to vertical spin devices
| Project/Area Number |
22686003
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
HAMAYA Kohei 九州大学, 大学院・システム情報科学研究院, 准教授 (90401281)
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| Project Period (FY) |
2010 – 2012
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| Project Status |
Completed (Fiscal Year 2012)
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| Budget Amount *help |
¥25,870,000 (Direct Cost: ¥19,900,000、Indirect Cost: ¥5,970,000)
Fiscal Year 2012: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2011: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2010: ¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
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| Keywords | エピタキシャル成長 / ポストCMOS / スピントランジスタ / スピントロニクス / ゲルマニウム結晶成長 / 分子線エピタキシー |
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| Research Abstract |
For vertical-metallic source/drain spin transistors, we focused on the high-quality fabrication of semiconductor channels on a ferromagnetic metal. Using molecular beam epitaxy and atomic arrangements between Fe_3Si and Ge at the (111) plane, we have developed Si atomic termination method for the Fe_3Si surface. As a result, we demonstrated epitaxial growth of high-quality Ge films on Fe_3Si. This study will open a new way for vertical-type Ge-channel transistors with metallic source/drain contacts.
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Report
(4 results)
Research Products
(22 results)
