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Improvement in efficiencies of light emitting devices by surface plasmon

Research Project

Project/Area Number 22686031
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

INOUE Shigeru  東京大学, 生産技術研究所, 特任助教 (10470113)

Project Period (FY) 2010 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2011: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2010: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
KeywordsIII族窒化物半導体 / III族窒化物 / 表面プラズモン
Research Abstract

Improvement in efficiencies of green light emitting devices is highly required. Surface plasmon is a promising candidate to solve this problem. In this research, the use of semiconductors fabricated by pulsed sputtering deposition techniques and metal films enable us to improve efficiencies of green light emitting devices.

Report

(3 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • Research Products

    (6 results)

All 2012 2011

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (5 results)

  • [Journal Article] 金属基板上への窒化物半導体低温成長2012

    • Author(s)
      井上茂, 太田実雄, 小林篤, 藤岡洋
    • Journal Title

      日本結晶成長学会誌

      Volume: 38巻 Pages: 249-254

    • Related Report
      2011 Annual Research Report 2011 Final Research Report
    • Peer Reviewed
  • [Presentation] PSD法によるAlGaN/GaN HEMT構造の特性2012

    • Author(s)
      丹所昂平,井上茂,太田実雄,藤岡洋
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Year and Date
      2012-03-16
    • Related Report
      2011 Final Research Report
  • [Presentation] PSD法によるAlGaN/GaN HEMT構造の特性2012

    • Author(s)
      丹所昂平, 井上茂, 太田実雄, 藤岡洋
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学(東京都)
    • Year and Date
      2012-03-16
    • Related Report
      2011 Annual Research Report
  • [Presentation] PSD法により作製したAlGaN/GaNヘテロ構造の電気特性2011

    • Author(s)
      丹所昂平,田村和也,井上茂,太田実雄,藤岡洋
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Year and Date
      2011-09-01
    • Related Report
      2011 Final Research Report
  • [Presentation] PSD法により作製したAlGaN/GaNヘテロ構造の電気特性2011

    • Author(s)
      丹所昂平, 田村和也, 井上茂, 太田実雄, 藤岡洋
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学(山形県)
    • Year and Date
      2011-09-01
    • Related Report
      2011 Annual Research Report
  • [Presentation] フルカラーInGaN発光ダイオードの作製と評価2011

    • Author(s)
      田村和也,太田実雄,丹所昂平,小林篤,井上茂,藤岡洋
    • Organizer
      第58回応用物理学関連連合講演会
    • Place of Presentation
      神奈川工科大学
    • Year and Date
      2011-03-24
    • Related Report
      2011 Final Research Report 2010 Annual Research Report

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Published: 2010-08-23   Modified: 2016-04-21  

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