| Budget Amount *help |
¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2010: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Research Abstract |
Semiconducting silicide, beta-FeSi2, is a novel silicon-optoelectronic material which shows photoresponse and light emission in the wavelength range of near infrared. In this study, we have studied the strain-induced modification of band structure in beta-FeSi2. In the results, it was revealed that an introduction of strain along a-axis direction of the beta-FeSi2 epitaxial film is effective to control the band structure from indirect transition type to direct transition one. In addition, we have succeeded in the growth of high quality beta-FeSi2 epitaxial film with low residual carrier concentration.
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