Control of band structure in strained silicide structures
Project/Area Number |
22686032
|
Research Category |
Grant-in-Aid for Young Scientists (A)
|
Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Kagoshima University (2013) Osaka University (2010-2012) |
Principal Investigator |
|
Project Period (FY) |
2010-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000)
Fiscal Year 2013: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
Fiscal Year 2010: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
|
Keywords | 結晶成長 / 半導体光物性 / シリサイド半導体 / シリコンオプトエレクトロニクス / 分子線エピタキシー / エピタキシャル成長 / 変調分光法 / フォトリフレクタンス / 鉄シリサイド / 分子線エピタキシー法 |
Research Abstract |
Semiconducting silicide, beta-FeSi2, is a novel silicon-optoelectronic material which shows photoresponse and light emission in the wavelength range of near infrared. In this study, we have studied the strain-induced modification of band structure in beta-FeSi2. In the results, it was revealed that an introduction of strain along a-axis direction of the beta-FeSi2 epitaxial film is effective to control the band structure from indirect transition type to direct transition one. In addition, we have succeeded in the growth of high quality beta-FeSi2 epitaxial film with low residual carrier concentration.
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Report
(5 results)
Research Products
(70 results)