Construction of III-V CMOS Photonics

• Project/Area Number: 22686034
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Tokyo
• Principal Investigator: TAKENAKA Mitsuru 東京大学, 工学(系)研究科(研究院), 准教授 (20451792)
• Project Period (FY): 2010-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥25,740,000 (Direct Cost: ¥19,800,000、Indirect Cost: ¥5,940,000); Fiscal Year 2013: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000); Fiscal Year 2012: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000); Fiscal Year 2011: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000); Fiscal Year 2010: ¥10,920,000 (Direct Cost: ¥8,400,000、Indirect Cost: ¥2,520,000)
• Keywords: 光電子集積回路 / CMOSフォトニクス / 細線導波路 / 光変調器 / 受光器 / InGaAs MOSFET / 基板貼り合せ / III-V-OI基板 / 光集積回路 / 光スイッチ / 化合物半導体 / MOSトランジスタ / 基板貼り合わせ / CMOS photonics / III-V MOSFET

Research Abstract

We have successfully established the fabrication procedure of III-V-on-Insulator (III-V-OI) wafers by using the direct wafer bonding technology. As a result, we have demonstrated high-performance optical switches/modulators and waveguide photodetectors on the III-V-OI wafer in addiction to InP-based photonic-wire passive devices. We have also established the fabrication procedure of InGaAs MOS transistors on the III-V-OI wafer.
Thus, we have successfully demonstrated the basic concept of the III-V CMOS photonics platform on which ultra-small III-V-based photonic-wire devices and high-performance III-V-based CMOS transistors can be co-integrated by using the III-V-OI wafer.

Research Products

• [Journal Article] III-V CMOS フォトニクスを用いた光電子融合集積回路プラットフォーム技術 (2014)
  • Author(s): 竹中充, 一宮佑希, 程勇鵬, 金相賢, 高木 信一
  • Journal Title: 電子情報通信学会和文論文誌C Volume: vol.J97-C, No.3 Pages: 95-103
• [Journal Article] Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation (2014)
  • Author(s): S. H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: Applied Physics Letters Volume: 104 Issue: 11 Pages: 113509-113509
  • DOI: 10.1063/1.4869221
  • Peer Reviewed
• [Journal Article] III-V CMOSフォトニクスを用いた光電子融合集積回路プラットフォーム技術 (2014)
  • Author(s): 竹中充，一宮佑希，程勇鵬，金相賢，高木 信一
  • Journal Title: 電子情報通信学会和文論文誌C Volume: J97-C Pages: 95-103
  • Peer Reviewed
• [Journal Article] ductor-compatible IIInGaAsP grating couplers fabricated using complementary-metal-oxide-semiconI-V-on-insulator on Si (2013)
  • Author(s): Mitsuru Takenaka, Masafumi Yokoyama, Masakazu Sugiyama, Yoshiaki Nakano, and Shinichi Takagi
  • Journal Title: Applied Physics Express Volume: vol. 6 Issue: 4 Pages: 42501-42501
  • DOI: 10.7567/apex.6.042501
  • Peer Reviewed
• [Journal Article] Impact of Fermi level pinning due to interface traps inside conduction band on the inversion-layer mobility in InxG_a_<1-x> As metal-oxide-semiconductor field effect transistors (2013)
  • Author(s): N. Taoka, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: IEEE Transactions on device and materials reliability Volume: 13 Issue: 4 Pages: 456-462
  • DOI: 10.1109/tdmr.2013.2289330
  • Peer Reviewed
• [Journal Article] Invited : Performance enhancement technologies in III-V/Ge MOSFETs Ge-based and III-V technologies (2013)
  • Author(s): S. Takagi, Rui Zhang, S. -H. Kim, M. Yokoyama, and M. Takenaka
  • Journal Title: ECS Trans. Volume: VOL. 59 Issue: 9 Pages: 137-148
  • DOI: 10.1149/05809.0137ecst
  • Peer Reviewed
• [Journal Article] Invited : III-V/Ge MOS transistor technologies for future ULSI future IC technology and novel devices (2013)
  • Author(s): S. Takagi and M. Takenaka
  • Journal Title: ECS Trans. Volume: VOL. 54 Issue: 1 Pages: 39-54
  • DOI: 10.1149/05401.0039ecst
  • Peer Reviewed
• [Journal Article] Biaxially strained Extremely-thin Body I_<n0.53>G_<a0.47>As-On-Insulator MOSFETs on Si substrates and Physical Understanding on their electron mobility (2013)
  • Author(s): S. -H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Journal Title: Journal of Applied Physics Volume: 114 Issue: 16 Pages: 164512-164512
  • DOI: 10.1063/1.4828481
  • Peer Reviewed
• [Journal Article] Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors (2013)
  • Author(s): N. Taoka, M. Yokoyama, S. -H. Kim, R. Suzuki, S. Lee, R. Iida, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: Applied Physics Letters Volume: 103 Issue: 14 Pages: 143509-143509
  • DOI: 10.1063/1.4824474
  • Peer Reviewed
• [Journal Article] Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform (2012)
  • Author(s): Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: Optics Express Letters Volume: vol.20, no.26 Issue: 26 Pages: B357-B357
  • DOI: 10.1364/oe.20.00b357
  • Peer Reviewed
• [Journal Article] Electron mobility enhancement of extremely thin body In_<0.7>Ga_<0.3>As-on-insulator metal-oxide-semiconductor field-effect transistors on Si substrates by metal-oxide-semiconductor interface buffer layers (2012)
  • Author(s): S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: Appl. Phys. Express Volume: Vol.5 Issue: 1 Pages: 14201-14201
  • DOI: 10.1143/apex.5.014201
  • NAID: 10030154895
  • Peer Reviewed
• [Journal Article] High performance extremely thin body InGaAs-on-insulator metal-oxide semiconductor field-effect transistors on Si substrates with Ni-InGaAs metal source/drain (2011)
  • Author(s): S. H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka, and S. Takagi
  • Journal Title: Appl. Phys. Express Volume: Vol.4 Issue: 11 Pages: 114201-114201
  • DOI: 10.1143/apex.4.114201
  • NAID: 10030153611
  • Peer Reviewed
• [Presentation] Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III-V CMOS photonics platform (2014)
  • Author(s): Y. Ikku, M.Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: Optical Fiber Communication Conference (OFC2014)
  • Place of Presentation: San Francisco
  • Year and Date: 2014-03-13
• [Presentation] High performance sub-20-nm-channel-length extremely-thin body InAs-on-Insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability (2013)
  • Author(s): S.-H. Kim, M. Yokoyama, R. Nakane, M. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
  • Organizer: International Electron Devices Meeting (IEDM'13)
  • Place of Presentation: Washington D. C
  • Year and Date: 2013-12-10
• [Presentation] III-V/Ge device engineering for CMOS photonics (2013)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: International Conference on Processing & Manufacturing of Advanced Materials (THERMEC2013)
  • Place of Presentation: Las Vegas
  • Year and Date: 2013-12-03
  • Invited
• [Presentation] Heterogeneous integration for CMOS photonics (2013)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: 3rd International Symposium on Photonics and Electronics Convergence (ISPEC2013)
  • Place of Presentation: Tokyo
  • Year and Date: 2013-11-20
  • Invited
• [Presentation] Waveguide InGaAs MSM photodetector for chip-scale optical interconnects on III-V CMOS photonics platform (2013)
  • Author(s): Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: Asia Communications and Photonics Conference (ACP2013)
  • Place of Presentation: Beijin
  • Year and Date: 2013-11-14
• [Presentation] Low-crosstalk 2 × 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform (2013)
  • Author(s): Y. Ikku, M. Yokoyama, N. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: European Conference on Optical Communication (ECOC'13)
  • Place of Presentation: London
  • Year and Date: 2013-09-24
• [Presentation] Ultra-thin body MOS device technologies using high mobility channel materials (2013)
  • Author(s): S. Takagi, S.-H. Kim, M. Yokoyama, W.-K. Kim, R. Zhang and M. Takenaka, “Ultra-thin body MOS device technologies using high mobility channel materials
  • Organizer: IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference
  • Place of Presentation: Hyatt Regency Monterey Hotel, Monterey, USA
  • Invited
• [Presentation] III-V CMOSフォトニクスを用いた低電流駆動光スイッチ (2013)
  • Author(s): 一宮佑希，横山正史，市川磨，秦雅彦，竹中充，高木信一
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学、神奈川
• [Presentation] III-V CMOSフォトニクスプラットフォームと光インターコネクションへの展開 (2013)
  • Author(s): 竹中充，一宮佑希，キムサンヒョン，横山正史，高木信一
  • Organizer: 電子情報通信学会総合大会
  • Place of Presentation: 岐阜大学、岐阜
  • Invited
• [Presentation] III-V CMOSフォトニクスを用いたInGaAsP細線導波路光スイッチ (2013)
  • Author(s): 一宮佑希，横山正史，市川磨，秦雅彦，竹中充，高木信一
  • Organizer: 電子情報通信学会総合大会
  • Place of Presentation: 岐阜大学、岐阜
  • Invited
• [Presentation] Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform (2012)
  • Author(s): Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: European Conference on Optical Communication (ECOC'12)
  • Place of Presentation: Amsterdam
  • Year and Date: 2012-09-18
• [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits (2012)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD'12)
  • Place of Presentation: Naha
  • Year and Date: 2012-06-29
  • Invited
• [Presentation] Propagation-loss reduction in InGaAsP photonic-wire waveguides by InP and Al_2O_3 passivation layers (2012)
  • Author(s): Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
  • Organizer: 16th European Conference on Integrated Optics (ECIO'12)
  • Place of Presentation: Barcelona
  • Year and Date: 2012-04-18
• [Presentation] InGaAsP photonic-wire Mach-Zehnder interferometer switches fabricated on III-V CMOS photonics platform (2012)
  • Author(s): Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: 2nd International Symposium on Photonics and Electronics Convergence
  • Place of Presentation: The University of Tokyo, Tokyo
• [Presentation] Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform (2012)
  • Author(s): Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: European Conference on Optical Communication
  • Place of Presentation: Amsterdam, Netherland
• [Presentation] III-V/Ge integration on Si platform for electronic-photonic integrated circuits (2012)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Okinawa Seinen-kaikan, Okinawa
  • Invited
• [Presentation] Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1-xAs-on-insulator MOSFETs on a Si with Ni-InGaAs metal S/D and MOS interface buffer Engineering (2012)
  • Author(s): S. H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
  • Organizer: VLSI Symposium
  • Place of Presentation: Honolulu, United Sates of America
• [Presentation] Propagation-loss reduction in InGaAsP photonic-wire waveguides by InP and Al2O3 passivation layers (2012)
  • Author(s): Y. Ikku, M. Yokoyama, O. Ichikawa, M. Hata, M. Takenaka and S. Takagi
  • Organizer: European Conference on Integrated Optics
  • Place of Presentation: Barcelona, Spain
• [Presentation] InPとAl2O3パッシベーションによるInGaAsP細線導波路の損失改善 (2012)
  • Author(s): 一宮佑希、横山正史、市川磨、秦雅彦、竹中充、高木信一
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学、愛媛
• [Presentation] 高性能光電子集積回路に向けたIII-V CMOSフォトニクスプラットフォーム技術 (2012)
  • Author(s): 竹中充、一宮佑希、キムサンヒョン、横山正史、高木信一
  • Organizer: 電子情報通信学会ソサイエティ大会
  • Place of Presentation: 富山大学、富山
  • Invited
• [Presentation] III-V on Silicon for high-speed electronics and CMOS photonics (2011)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: Indium Phosphide and Related Materials (IPRM'11)
  • Place of Presentation: Berlin
  • Year and Date: 2011-05-23
  • Invited
• [Presentation] III-V CMOS technologies on Si platform (2011)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: MRS Spring Meeting
  • Place of Presentation: San Francisco
  • Year and Date: 2011-04-27
  • Invited
• [Presentation] ALD Al2O3を用いたIII-V CMOS Photonics用貼り合わせ基板の特性改善 (2011)
  • Author(s): 一宮佑希、横山正史、飯田亮、杉山正和、中野義昭、竹中充、高木信一
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-26
• [Presentation] Enhancement technologies and physical understanding of electron mobility in III-V n-MOSFETs with strain and MOS interface buffer engineering (2011)
  • Author(s): S.H. Kim, M. Yokoyama, N. Taoka, R. Nakane, T. Yasuda, M. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi
  • Organizer: International Electron Devices Meeting
  • Place of Presentation: Washington D.C., United States of America
• [Presentation] High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering (2011)
  • Author(s): S.H. Kim, M. Yokoyama, N. Taoka, R. Iida, S. Lee, R. Nakane, Y. Urabe, N. Miyata, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Takenaka and S. Takagi
  • Organizer: VLSI Symposium
  • Place of Presentation: Rihga Royal Hotel Kyoto, Kyoto
• [Presentation] III-V on Silicon for high-speed electronics and CMOS photonics (2011)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: Indium Phosphide and Related Materials
  • Place of Presentation: Berlin, Germany
  • Invited
• [Presentation] ALD Al2O3 activated direct wafer bonding for III-V CMOS photonics platform (2011)
  • Author(s): Y. Ikku, M. Yokoyama, R. Iida, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi
  • Organizer: Indium Phosphide and Related Materials
  • Place of Presentation: Berlin, Germany
• [Presentation] III-V CMOS technologies on Si platform (2011)
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: MRS Spring Meeting
  • Place of Presentation: San Francisco, United States of America
  • Invited
• [Presentation] メタルS/D 構造及びMOS interface buffer 層の導入による極薄膜 InGaAs-OI MOSFET の高性能化 (2011)
  • Author(s): 金相賢、横山正史、田岡紀之、飯田亮、李成薫、中根了昌、卜部友二、宮田典幸、安田哲二、山田永、福原昇、秦雅彦、竹中充、高木信一
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学、山形
• [Presentation] III-V CMOS photonicsプラットフォーム実現に向けたグレーティングカプラの作製 (2010)
  • Author(s): 竹中充、横山正史、杉山正和、中野義昭、高木信一
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-14
• [Presentation] 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術 (2010)
  • Author(s): 竹中充、横山正史、杉山正和、中野義昭、高木信一
  • Organizer: 電子情報通信学会レーザ・量子エレクトロニクス研究会
  • Place of Presentation: 千歳アルカディアプラザ
  • Year and Date: 2010-08-26
• [Presentation] Ultra-small, low-crosstalk, electrically-driven InGaAsP photonic-wire optical switches on III-V CMOS photonics platform
  • Author(s): Y. Ikku, M.Yokoyama, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: Optical Fiber Communication Conference
  • Place of Presentation: Moscone center, San Francisco, USA
• [Presentation] High performance sub-20-nm-channel-length extremely-thin body InAs-on-Insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability
  • Author(s): S.-H. Kim, M. Yokoyama, R. Nakane, M. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
  • Organizer: International Electron Devices Meeting
  • Place of Presentation: Washington Hilton, Washington D. C., USA
• [Presentation] III-V/Ge device engineering for CMOS photonics
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: International Conference on Processing & Manufacturing of Advanced Materials
  • Place of Presentation: Rio Hotel, Las Vegas, USA
  • Invited
• [Presentation] Heterogeneous integration for CMOS photonics
  • Author(s): M. Takenaka and S. Takagi
  • Organizer: 3rd International Symposium on Photonics and Electronics Convergence
  • Place of Presentation: Eneos Hall, Meguro-ku, Tokyo
  • Invited
• [Presentation] Reduction in crosstalk of carrier-injection mach-zehnder interferometer optical switches by using III-V CMOS photonics platform
  • Author(s): Y. Ikku, M. Yokoyama, M. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: 3rd International Symposium on Photonics and Electronics Convergence
  • Place of Presentation: Eneos Hall, Meguro-ku, Tokyo
• [Presentation] Waveguide InGaAs MSM photodetector for chip-scale optical interconnects on III-V CMOS photonics platform
  • Author(s): Y. Cheng, Y. Ikku, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: Asia Communications and Photonics Conference
  • Place of Presentation: Beijing International Convention Center, Beijin, China
• [Presentation] Performance enhancement technologies in III-V/Ge MOSFETS
  • Author(s): S. Takagi, R. Zhang, S.-H. Kim, M. Yokoyama, M. Takenaka
  • Organizer: 224th ECS Meeting
  • Place of Presentation: The Hilton San Francisco Hotel, San Francisco, USA
  • Invited
• [Presentation] High mobility CMOS technologies using III-V/Ge channels
  • Author(s): S. Takagi and M. Takenaka
  • Organizer: IEEE Nanotechnology Materials and Devices Conference
  • Place of Presentation: National Cheng Kung University, Tainan, Taiwan
  • Invited
• [Presentation] Physical understanding of electron mobility in uniaxially strained InGaAs-OI MOSFETs
  • Author(s): S.-H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: 43rd European Solid-State Device Research Conference (ESSDERC’13)
  • Place of Presentation: Marriott Bucharest Grand Hotel, Bucharest, Romaina
• [Presentation] Low-crosstalk 2 x 2 InGaAsP photonic-wire optical switches using III-V CMOS photonics platform
  • Author(s): Y. Ikku, M. Yokoyama, N. Noguchi, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: European Conference on Optical Communication
  • Place of Presentation: the ExCeL centre, London, UK
• [Presentation] III-V/Ge MOS transistor technologies for future ULSI
  • Author(s): Shinichi Takagi and Mitsuru Takenaka
  • Organizer: International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
  • Place of Presentation: Grand Hotel de Paris, Grenoble, France
  • Invited
• [Presentation] Strained extremely-thin body In0.53Ga0.47As-On-Insulator MOSFETs on Si substrates
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: VLSI Symposium
  • Place of Presentation: Rihga Royal Hotel Kyoto, Kyoto, Kyoto
• [Presentation] High performance extremely-thin body InAs-On-Insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, and S. Takagi
  • Organizer: VLSI Symposium
  • Place of Presentation: Rihga Royal Hotel Kyoto, Kyoto, Kyoto
• [Presentation] Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs
  • Author(s): S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka and S. Takagi
  • Organizer: Indium Phosphide and Related Materials
  • Place of Presentation: Kobe Convention Center, Kobe, Hyogo
• [Presentation] InGaAsP細線導波路光スイッチにおける低クロストーク動作
  • Author(s): 一宮佑希, 横山正史, 野口宗隆, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] II-V CMOSフォトニクス•プラットフォーム上導波路型InGaAs MSMフォトディテクタの作製
  • Author(s): 程勇鵬, 一宮佑希, 市川磨, 長田剛規, 秦雅彦, 竹中充, 高木信一
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] 量子井戸インターミキシグを用いた III-V CMOSフォトニクス用マルチバンドギャップ貼り合せ基板の作製
  • Author(s): 倉持美沙，竹中充，一宮佑希，高木信一
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県相模原市）
• [Presentation] 異種半導体集積CMOSおよびフォトニクス融合への展望
  • Author(s): 竹中充
  • Organizer: 光産業技術振興協会第4回フォトニックデバイス・応用技術研究会
  • Place of Presentation: 上智大学（東京都千代田区）
  • Invited
• [Presentation] 異種半導体集積を用いたCMOSフォトニクス
  • Author(s): 竹中充、高木信一
  • Organizer: レーザー学会第34回年次大会
  • Place of Presentation: 北九州国際会議場（福岡県北九州市）
  • Invited
• [Presentation] nGaAsP細線導波路光スイッチに向けたZn拡散によるp+InGaAsPの形成
  • Author(s): 一宮佑希，野口宗隆，横山正史，市川 磨，長田剛規，秦 雅彦，竹中 充，高木信一
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府京田辺市）
• [Presentation] III-V/Ge CMOSフォトニクス実現に向けたデバイス技術
  • Author(s): 竹中 充，高木信一
  • Organizer: 電気化学会電子材料委員会第77回半導体・集積回路技術シンポジウム
  • Place of Presentation: 東京工業大学（東京都目黒区）
  • Invited
• [Remarks] 高木竹中研究室ホームページ
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/
• [Remarks] 高木竹中研究室ホームページ
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/research/index.html
• [Remarks] 高木・竹中研究室
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/
• [Remarks] http://www.mosfet.k.u-tokyo.ac.jp/
• [Remarks]
  • URL: http://www.mosfet.k.u-tokyo.ac.jp/