| Budget Amount *help |
¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2010: ¥13,910,000 (Direct Cost: ¥10,700,000、Indirect Cost: ¥3,210,000)
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| Research Abstract |
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice matched heterostructure without any defects at the barrier interfaces was obtained, and TMR enhancement due to a spin-dependent coherent tunneling effect was demonstrated in the structure. In addition, it was found that cation-site disordering into the MgAl2O4 structure significantly increases the TMR. In fact, a giant TMR over 300% at room temperature was achieved by introducing the disordering into the barrier. These results demonstrate the effectiveness of MgAl2O4 as a spintronics material.
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