Development of a new magnetic tunnel junction structure using a monocrystalline spinel-based tunnel barrier
Project/Area Number |
22686066
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Single-year Grants |
Research Field |
Structural/Functional materials
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Research Institution | National Institute for Materials Science |
Principal Investigator |
SUKEGAWA Hiroaki 独立行政法人物質・材料研究機構, 磁性材料ユニット, 研究員 (30462518)
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Project Period (FY) |
2010 – 2012
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Project Status |
Completed (Fiscal Year 2012)
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Budget Amount *help |
¥20,540,000 (Direct Cost: ¥15,800,000、Indirect Cost: ¥4,740,000)
Fiscal Year 2012: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2011: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2010: ¥13,910,000 (Direct Cost: ¥10,700,000、Indirect Cost: ¥3,210,000)
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Keywords | スピントロニクス / トンネルバリア / TMR効果 / スピネル / 磁性薄膜 / MgAl204 / 強磁性トンネル接合 |
Research Abstract |
Tunnel magnetoresistance (TMR) devices with a monocrystalline MgAl2O4 barrier were successfully developed. The lattice matched heterostructure without any defects at the barrier interfaces was obtained, and TMR enhancement due to a spin-dependent coherent tunneling effect was demonstrated in the structure. In addition, it was found that cation-site disordering into the MgAl2O4 structure significantly increases the TMR. In fact, a giant TMR over 300% at room temperature was achieved by introducing the disordering into the barrier. These results demonstrate the effectiveness of MgAl2O4 as a spintronics material.
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Report
(4 results)
Research Products
(50 results)
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[Journal Article] Spin Polarimetry and Magnetic Dichroism on a Buried Magnetic Layer Using Hard X-ray Photoelectron Spectroscopy2012
Author(s)
G.Stryganyuk, X.Kozina, G.H.Fecher, S.Ouardi, S.Chadov, C.Felser, G.Schonhense, P.Lushchyk, A.Oelsner, P.Bernhard, E.Ikenaga, T.Sugiyama, H.Sukegawa, Z.C.Wen, K.Inomata, K.Kobayashi
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Journal Title
Japanese Journal of Applied Physics
Volume: 51
Issue: 1R
Pages: 016602-016602
DOI
NAID
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Peer Reviewed
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[Presentation] Improvement of bias voltage dependence in lattice-matched MgAl_2O_4-based magnetic tunnel junctions2010
Author(s)
Hiroaki Sukegawa, Huixin Xiu, Tadakatsu Ohkubo, Takao Furubayashi, Tomohiko Niizeki, Wenhong Wang, Shinya Kasai, Seiji Mitani, Koichiro Inomata, Kazuhiro Hono
Organizer
ICAUMS2010 (International Conference of AUMS)
Place of Presentation
Lotte Hotel Jeju, Seogwipo, Jeju Island, Korea(招待講演)
Year and Date
2010-12-07
Related Report
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[Presentation] Bias voltage dependence of tunnel magnetoresistance for fully-epitaxial Fe/spinel MgAl_2O_4/Fe junctions2010
Author(s)
Hiroaki Sukegawa, Huixin Xiu, Tadakatsu Ohkubo, Takao Furubayashi, Tomohiko Niizeki, Wenhong Wang, Shinya Kasai, Seiji Mitani, Koichiro Inomata, Kazuhiro Hono
Organizer
55th Annual Conference on Magnetism and Magnetic Materials
Place of Presentation
Atlanta, USA
Related Report
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[Presentation] Magnetic tunnel junctions with a spinel MgAl_2O_4 barrier2010
Author(s)
H.Sukegawa, H.Xiu, T.Furubayashi, T.Niizeki, Wenhong Wang, S.Kasai, T.Ohkubo, S.Mitani, K.Inomata, K.Hono
Organizer
ISAMMA2010 (The 2nd International Symposium on Advanced Magnetic Materials and Applications
Place of Presentation
仙台国際センター,仙台市
Related Report
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