| Project/Area Number |
22710107
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Nanomaterials/Nanobioscience
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
MANO Takaaki 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 (60391215)
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| Project Period (FY) |
2010 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 量子ドット / ガリウム砒素 / もつれ合い光子 / 自己形成 / 量子情報 / 液滴 / もつれあい光子 / GaAs |
|---|
| Research Abstract |
Great suppression of fine-structure splitting(FSS) is demonstrated in self-assembled GaAs quantum dots(QDs) grown on AlGaAs(111) A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than 20μeV, a substantial reduction from that of QDs grown on(100).
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