Study on physical properties of Mott-insulating and electron-doped state of ambipolar high-Tc cuprates
| Project/Area Number |
22740229
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Condensed matter physics II
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| Research Institution | Osaka University |
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Principal Investigator |
SEGAWA Kouji 大阪大学, 産業科学研究所, 准教授 (20371297)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Keywords | 強相関電子系 / 結晶成長 / モット絶縁体 / 酸化物高温超伝導体 / 高品質単結晶 |
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| Research Abstract |
The aim of the present project is studying the physical properties of an insulating state and an electron-doped state in a new candidate of an ambipolar cuprate using Nd. I have succeeded in making single crystals of the system, but unfortunately ambipolar doping was not realized.
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Report
(3 results)
Research Products
(34 results)
