Carrier doping at the interface between organic semiconductors
| Project/Area Number |
22750163
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Functional materials/Devices
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| Research Institution | Kyushu University |
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Principal Investigator |
GOUSHI Kemchi 九州大学, 工学研究院, 助教 (50462875)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | 有機半導体 / 電荷移動錯体 / 有機単結晶 / 有機半導体界面 / キャリアドーピング / 電荷移動 |
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| Research Abstract |
The control technique of carrier density in organic semiconductor single crystals by chemical doping is unestablished due to lattice mismatching. Therefore, we investigated a control technique of carrier density by charge transfer at the interface between an organic semiconductor single crystal and an organic semiconductor film. As a result, the conductivity of 1. 0 S/cm at the interface was observed.
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Report
(3 results)
Research Products
(16 results)
