| Project/Area Number |
22750166
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Functional materials/Devices
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| Research Institution | Yamagata University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | n型有機FET / 有機トランジスタ / 有機FET / 大気下安定 / n型 / 有機半導体 |
|---|
| Research Abstract |
We have investigated the FET properties and the interfacial charge transport properties in the hetero-layered OFET having an interfacial layer of opposite polarity materials between the insulating layer and the channel layer. The improvement mechanism in the FET device composed of acceptor/p-type layer has been clarified by investigating the relationship among FET properties, energetic parameters, and thin film structure. We also discussed the electronic properties at the donor/n-type interface from the viewpoint of charge generation process.
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