| Project/Area Number |
22760006
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Shizuoka University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2010: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Keywords | エピタキシャル成長 / 極性構造 / GaN / ナノ構造 / III族窒化物半導体 / 結晶成長 / 極性制御 / 有機金属気相エピタキシー法 / 両極性同時成長 |
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| Research Abstract |
In this study, the growth technique which controlled the polarity by the attention to the asymmetry in the crystal structure of GaN which is the wide-gap semiconductor material was developed. By examining method of processing of the substrate surface, the method for growing the polar face which differs for optional selective area was developed, because the condition of the substrate surface affected the polarity control in the crystal growth. Moreover, the phenomenon in which the polarity was replaced by the surface adsorption of the Mg atom in the growth was also examined, and it was clarified that the Mg segregation layer becomes a cause of the polarity inversion. These research results were able to expect the manufacture of the three-dimensional structure device using GaN, and the possibility of the new functional device was indicated.
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