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Designguidelinefor frequencytunable terahertz electromagnetic wave emittersonthe basis of semiconductorphysics

Research Project

Project/Area Number 22760010
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Applied materials science/Crystal engineering
Research InstitutionThe University of Shiga Prefecture

Principal Investigator

TAKEUCHI Hideo  滋賀県立大学, 工学部, 准教授 (50512779)

Project Period (FY) 2010 – 2012
Project Status Completed (Fiscal Year 2012)
Budget Amount *help
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2012: ¥260,000 (Direct Cost: ¥200,000、Indirect Cost: ¥60,000)
Fiscal Year 2011: ¥390,000 (Direct Cost: ¥300,000、Indirect Cost: ¥90,000)
Fiscal Year 2010: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Keywords光物性 / テラヘルツ電磁波 / 超高速現象 / コヒーレント縦光学フォノン / プラズモン / 光変調反射分光 / GaAsエピタキシャル膜
Research Abstract

We, on thebasisofsemiconductor physics, have investigated frequency tunable terahertz (THz) emitter. i-GaAs/ n-GaAs structures is suitable the frequency tunable THz emitters because their built-in electric field is controlled with the i-GaAs layer thickness. In addition, we have found that in the i-GaAs(d nm)/n-GaAs structure has frequency tenability. These characteristics are provided by the coupling mode between the longitudinal optical phonon and plasmon. We have taken account of the fact that the effect of the built-in electric field dominates the characteristics of the THz wave. We have found that the strained multiple quantum wells with the (11n) orientation emits the monochromatic the THzwave.

Report

(4 results)
  • 2012 Annual Research Report   Final Research Report ( PDF )
  • 2011 Annual Research Report
  • 2010 Annual Research Report
  • Research Products

    (55 results)

All 2013 2012 2011 2010 Other

All Journal Article (24 results) (of which Peer Reviewed: 22 results) Presentation (26 results) Book (2 results) Remarks (3 results)

  • [Journal Article] Terahertz radiation from the coherent longitudinal optical phonon-plasmon coupled mode in an i-GaAs/n-GaAs epitaxial structure2013

    • Author(s)
      Shuichi Tsuruta
    • Journal Title

      Journal of Physics: Conference Series

      Volume: 417 Pages: 0120511-6

    • DOI

      10.1088/1742-6596/417/1/012051

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement effects on excitonic photoluminescence intensity originating from misaligned crystal blocks and polycrystalline grains in a ZnO wafer2013

    • Author(s)
      Hideo Takeuchi
    • Journal Title

      The European Physical Journal B

      Volume: 80 Issue: 2

    • DOI

      10.1140/epjb/e2012-30502-7

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement mechanism of terahertz radiation from coherent longitudinal optical phonons in undoped GaAs/n-type GaAs epitaxial structures2013

    • Author(s)
      Shuichi Tsuruta
    • Journal Title

      Journal of Applied Physics

      Volume: 113 Issue: 14 Pages: 1435021-5

    • DOI

      10.1063/1.4799060

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characteristics of TiO2 Surfaces Etched by Capacitively Coupled Radio Frequency N2 and He Plasmas2013

    • Author(s)
      Retsuo Kawakami
    • Journal Title

      Journal of Physics: Conference Series

      Volume: ***

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Intense monochromatic terahertz electromagnetic waves from coherent GaAs-like longitudinal optical phonons in (11n)-oriented GaAs/In0.1Al0.9As strained multiple quantum wells2012

    • Author(s)
      H. Takeuchi, S.Asai, S. Tsuruta, and M,Nakayama
    • Journal Title

      Applied Physics Letters

      Volume: 100 Pages: 2421071-4

    • URL

      http://dx.doi.org/10.1016/j.phpro.2012.03.687

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method2012

    • Author(s)
      H. Takeuchi, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
    • Journal Title

      Physic Procedia

      Volume: 29 Pages: 30-35

    • Related Report
      2012 Annual Research Report 2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer2012

    • Author(s)
      H. Takeuchi, S. Tsuruta, and M. Nakayama
    • Journal Title

      Physica Status Solidi C 9

      Volume: C9 Pages: 2610-2613

    • URL

      http://dx.doi.org/10.1002/pssc.201200160

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Dynamical characteristicsof a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy2012

    • Author(s)
      H. Takeuchi, S. Tsuruta, and M. Nakayama
    • Journal Title

      AIP Conference Proceedings

      Volume: 1506 Pages: 73-78

    • URL

      http://link.aip.org/link/doi/10.1063/1.4772529

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Ultrafast optical response originating from carrier-transport processes in undoped GaAs/n-type GaAs epitaxial structures2012

    • Author(s)
      T. Hasegawa, Y. Takagi, H. Takeuchi, H. Yamada, M. Hata, and M. Nakayama
    • Journal Title

      Appl. Phys. Lett

      Volume: 100 Issue: 21 Pages: 2119021-4

    • DOI

      10.1063/1.4720157

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer2012

    • Author(s)
      Hideo Takeuchi
    • Journal Title

      Physica Status Solidi C

      Volume: 9 Issue: 12 Pages: 2610-2613

    • DOI

      10.1002/pssc.201200160

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy2012

    • Author(s)
      Hideo Takeuchi
    • Journal Title

      AIP conference proceedings

      Volume: 1506 Issue: 1 Pages: 73-78

    • DOI

      10.1063/1.4772529

    • NAID

      120006500966

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2020664

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] First-sharp difraction peaks in amorphous GeTe and Ge2Sb2Te5 films prepared by vacuum-thermal deposition2012

    • Author(s)
      Toshihiro Nakaoka
    • Journal Title

      AIP Advances

      Volume: 2 Issue: 4 Pages: 0421891-6

    • DOI

      10.1063/1.4773329

    • Related Report
      2012 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures2011

    • Author(s)
      H. Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
    • Journal Title

      Physica Status Solidi C8

      Volume: C8 Pages: 343-345

    • URL

      http://dx.doi.org/10.1002/pssc.201000396

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Frequency-tunable terahertz electro- magnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond- range carrier-transport processes2011

    • Author(s)
      H. Takeuchi, J. Yanagisawa, S. Tsuruta, H. Yamada, M. Hata, and M. Nakayama
    • Journal Title

      Journal of Luminescence

      Volume: 131 Pages: 531-534

    • URL

      http://dx.doi.org/10.1016/j.jlumin.2010.09.022

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Emission of the terahertz electro- magneticwave fromcoherent longitudinal optical phonons in a GaAs buffer layer opticallymaskedby a GaSb top epitaxial layer2011

    • Author(s)
      H. Takeuchi, S. Tsuruta, and M. Nakayama
    • Journal Title

      Applied Physics Letters

      Volume: 98 Pages: 1519051-3

    • URL

      http://dx.doi.org/10.1063/1.3574541

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through the i-GaAs layer of an i-GaAs/n-GaAs epitaxial structure2011

    • Author(s)
      H. Takeuchi, S. Tsuruta, and M. Nakayama
    • Journal Title

      JournalofApplied Physics

      Volume: 110 Pages: 135151-6

    • NAID

      120006500970

    • URL

      http://dx.doi.org/10.1063/1.3603046

    • Related Report
      2012 Final Research Report
    • Peer Reviewed
  • [Journal Article] Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy2011

    • Author(s)
      H. Takeuchi, S. Tsuruta, and M. Nakayama
    • Journal Title

      AIP Conference Proceedings

      Volume: 1416 Pages: 84-87

    • URL

      http://dx.doi.org/10.1063/1.3603046

    • Related Report
      2012 Final Research Report 2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Emission of the terahertz electromagnetic wave from coherent longitudinal optical phonons in a GaAs buffer layer optically masked by a GaSb top epitaxial layer2011

    • Author(s)
      Hideo Takeuchi, Syuichi Tsuruta, Masaaki Nakayama
    • Journal Title

      Applied Physics Letters

      Volume: 98 Issue: 15 Pages: 151905

    • DOI

      10.1063/1.3574541

    • NAID

      120006500969

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2019628

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Terahertz spectroscopy of dynamics of coupling between the coherent longitudinal optical phonon and plasmon in the surge current of instantaneously photogenerated carriers flowing through the i-GaAs layer of an i-GaAs/n-GaAs epitaxial structure2011

    • Author(s)
      Hideo Takeuchi, Syuichi Tsuruta, Masaaki Nakayama
    • Journal Title

      Journal of Applied Physics

      Volume: 110 Issue: 1 Pages: 013515

    • DOI

      10.1063/1.3603046

    • NAID

      120006500970

    • URL

      https://ocu-omu.repo.nii.ac.jp/records/2019944

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] GaSb/GaAsエピタキシャル構造の遮光されたGaAs緩衝層におけるコヒーレント縦光学フォノンからのテラヘルツ分光2011

    • Author(s)
      竹内日出雄, 鶴田修一, 中山正昭
    • Journal Title

      第22回光物性研究会論文集

      Volume: 22 Pages: 105-108

    • Related Report
      2011 Annual Research Report
  • [Journal Article] (11n)面方位GaAs/InAlAs歪み多重量子井戸におけるコヒーレントLOフォノンからの高強度テラヘルツ電磁波2011

    • Author(s)
      浅井聡太, 鶴田修一, 竹内日出雄, 中山正昭
    • Journal Title

      第22回光物性研究会論文集

      Volume: 22 Pages: 109-112

    • Related Report
      2011 Annual Research Report
  • [Journal Article] Simple strategy for enhancing terahertz emission from coherent longitu dinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures2011

    • Author(s)
      H.Takeuchi, J.Yanagisawa, S.Tsuruta, H.Yamada, M.Hata, M.Nakayama.
    • Journal Title

      Physica Status Solidi C

      Volume: 8 Pages: 343-345

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes2011

    • Author(s)
      H.Takeuchi, J.Yanagisawa, S.Tsuruta, H.Yamada, M.Hata, M.Nakayama
    • Journal Title

      Journal of Luminescence

      Volume: 131 Pages: 531-534

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Frequency shift of terahertz electromagnetic waves originating from sub-picosecond-range carrier transport in undoped GaAs/n-type GaAs epitaxial layer structures2010

    • Author(s)
      H.Takeuchi, J.Yanagisawa, S.Tsuruta, H.Yamada, M.Hata, M.Nakayama
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 49

    • NAID

      40017253776

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] Enhancement Mechanism of Terahertz Radiation from Coherent Longitudinal Optical Phonons in i-GaAs/n-GaAs Epitaxial Structures2013

    • Author(s)
      Shuichi Tsuruta
    • Organizer
      The 40th International Symposium on Compound Semiconductors
    • Place of Presentation
      Kobe Convention Center, Kobe, Japan
    • Related Report
      2012 Annual Research Report
  • [Presentation] アンドープGaAs/n型GaAsエピタキシャル層構造におけるキャリア輸送過程に起因した超高速光応答II2013

    • Author(s)
      長谷川尊之
    • Organizer
      日本物理学会第68回年次大会
    • Place of Presentation
      広島大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] (11n)面方位GaAs/InAlAs歪み多重量子井戸における コヒーレントLOフォノンからの高強度THz電磁波発生II2013

    • Author(s)
      浅井聡太
    • Organizer
      日本物理学会第68回年次大会
    • Place of Presentation
      広島大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] Photogenerated-carrier-induced band bending effects on generation of a coherent longitudinal optical phonon in a GaAs buffer layer optically masked by a GaSb top epitaxial layer2012

    • Author(s)
      H.Takeuchi
    • Organizer
      The 5th International Conference on Optical, Optelectronics, and Photonic Materials and Application (ICOOPMA)
    • Place of Presentation
      Nara Prefectural New Public Hall, Nara, Japan.
    • Year and Date
      2012-06-03
    • Related Report
      2012 Final Research Report
  • [Presentation] i-GaAs/n-GaAs構造における縦光学フォノン・プラズモン結合モードによるテラヘルツ電磁波2012

    • Author(s)
      竹内日出雄, 鶴田修一, 中山正昭
    • Organizer
      第67回日本物理学会
    • Place of Presentation
      関西学院大学
    • Year and Date
      2012-03-26
    • Related Report
      2011 Annual Research Report
  • [Presentation] Enhancement effects on excitonic photoluminescence intensity originating from misaligned crystal blocks and polycrystalline grains in a ZnO wafer2012

    • Author(s)
      Hideo Takeuchi
    • Organizer
      The 10th International Conference on Excitonic Processes in Condensed Matter, Nanostructured and Molecular Materials
    • Place of Presentation
      Groningen, The Netherlands
    • Related Report
      2012 Annual Research Report
  • [Presentation] Dynamical Characteristics of a Coherent Longitudinal Optical Phonon in a GaAs Buffer Layer Optically Covered with a GaSb Top Epitaxial Layer Investigated with Use of Terahertz Spectroscopy2012

    • Author(s)
      Hideo Takeuchi
    • Organizer
      PHONONS 2012: XIV International Conference on Phonon Scattering in Condensed Matter
    • Place of Presentation
      Ann Arbor, MI USA
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaSb/GaAsエピタキシャル構造におけるコヒーレント縦光学フォノン緩和過程のテラヘルツ分光2012

    • Author(s)
      竹内日出雄
    • Organizer
      日本物理学会2012年秋季大会
    • Place of Presentation
      横浜国立大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] アンドープGaAs/n型GaAsエピタキシャル層構造における キャリア輸送過程に起因した超高速光応答2012

    • Author(s)
      長谷川尊之
    • Organizer
      日本物理学会2012年秋季大会
    • Place of Presentation
      横浜国立大学
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaSb/GaAsエピタキシャル構造において同時観測されたGaAsとGaSbのコヒーレントLOフォノンダイナミクスのテラヘルツ分光2012

    • Author(s)
      竹内日出雄
    • Organizer
      第23回光物性研究会
    • Place of Presentation
      大阪市立大学・学術総合センター
    • Related Report
      2012 Annual Research Report
  • [Presentation] (11n)面方位GaAs/InAlAs歪み多重量子井戸におけるコヒーレントLOフォノンからのテラヘルツ電磁波発生の励起強度依存性2012

    • Author(s)
      浅井聡太
    • Organizer
      第23回光物性研究会
    • Place of Presentation
      大阪市立大学・学術総合センター
    • Related Report
      2012 Annual Research Report
  • [Presentation] アンドープGaAs/n型GaAsエピタキシャル構造におけるキャリア輸送を利用した超高速光応答制御2012

    • Author(s)
      長谷川尊之
    • Organizer
      第23回光物性研究会
    • Place of Presentation
      大阪市立大学・学術総合センター
    • Related Report
      2012 Annual Research Report
  • [Presentation] GaSb/GaAsエピタキシャル構造の遮光されたGaAs緩衝層におけるコヒーレント縦光学フォノンからのテラヘルツ分光2011

    • Author(s)
      竹内日出雄, 鶴田修一, 中山正昭
    • Organizer
      第22回光物性研究会
    • Place of Presentation
      熊本大学
    • Year and Date
      2011-12-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] (11n)面方位GaAs/InAlAs歪み多重量子井戸におけるコヒーレントLOフォノンからの高強度テラヘルツ電磁波2011

    • Author(s)
      浅井聡太, 鶴田修一, 竹内日出雄, 中山正昭
    • Organizer
      第22回光物性研究会
    • Place of Presentation
      熊本大学
    • Year and Date
      2011-12-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] Terahertz radiation from the coherent longitudinal optical phonon-plasm on coupled mode in an i-GaAs/n-GaAs epitaxial structure2011

    • Author(s)
      Shuichi Tsuruta, Hideo Takeuchi, Masaaki Nakayama
    • Organizer
      15th International Conference on Thin Films (ICTF-15)
    • Place of Presentation
      Kyoto Terrasa, Japan
    • Year and Date
      2011-11-09
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaSb/GaAsエピタキシャル構造における遮光されたGaAs緩衝層のコヒーレント縦光学フォノンからのテラヘルツ電磁波2011

    • Author(s)
      竹内日出雄, 鶴田修一, 中山正昭
    • Organizer
      第66回日本物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2011-09-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] (11n)面方位GaAs/InAlAs歪み多重量子井戸におけるコヒーレントLOフォノンからのTHz電磁波発生2011

    • Author(s)
      浅井聡太, 鶴田修一, 竹内日出雄, 中山正昭
    • Organizer
      第66回日本物理学会
    • Place of Presentation
      富山大学
    • Year and Date
      2011-09-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy2011

    • Author(s)
      Hideo Takeuchi, Syuichi Tsuruta, Masaaki Nakayama
    • Organizer
      15th International Conference on Narrow Gap Systems (NGS15)
    • Place of Presentation
      Virginia Polytechnic Institute, U.S.A.
    • Year and Date
      2011-08-04
    • Related Report
      2011 Annual Research Report
  • [Presentation] Detection of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer using terahertz electromagnetic wave spectroscopy2011

    • Author(s)
      H. Takeuchi
    • Organizer
      15th International Conference on Narrow Gap Systems (NGS15)
    • Place of Presentation
      Virginia Polytechnic Institute & State Universiherety, Virginia, USA.
    • Year and Date
      2011-08-01
    • Related Report
      2012 Final Research Report
  • [Presentation] Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partiti oning Fourier transform method2011

    • Author(s)
      H.Takeuchi, S.Tsuruta, H.Yamada, M.Hata, M.Nakayama
    • Organizer
      The International Conference on Luminescence & Optical Spectroscopy of Condensed Matter 2011
    • Place of Presentation
      University of Michigan, U.S.A.
    • Year and Date
      2011-06-29
    • Related Report
      2011 Annual Research Report
  • [Presentation] Time evolution of terahertz electromagnetic waves from undoped GaAs/n-type GaAs epitaxial layer structures clarified with use of a time-partitioning Fourier transform method2011

    • Author(s)
      H. Takeuchi
    • Organizer
      TheInternationalConference on Luminescence & Optical Spectroscopy of Condensed Matter 2011
    • Place of Presentation
      Central Campus of the University of Michigan, AnnArbor, Michigan, USA
    • Year and Date
      2011-06-26
    • Related Report
      2012 Final Research Report
  • [Presentation] アンドープGaAs/n型GaAsエピタキシャル構造からのテラヘルツ電磁波の時間分かつFourier変換解析2010

    • Author(s)
      竹内日出雄, 鶴田修一, 秦雅彦, 山田永, 中山正昭
    • Organizer
      日本物理学会2010年秋季大会
    • Place of Presentation
      大阪府立大学/大阪府
    • Year and Date
      2010-09-25
    • Related Report
      2010 Annual Research Report
  • [Presentation] Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond-range carrier-transport processes2010

    • Author(s)
      H.Takeuchi, J.Yanagisawa, S.Tsuruta, H.Yamada, M.Hata, M.Nakayama.
    • Organizer
      The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10)
    • Place of Presentation
      Argonne, Illinois, USA
    • Year and Date
      2010-06-22
    • Related Report
      2010 Annual Research Report
  • [Presentation] Frequency-tunable terahertz electromagnetic wave emitters based on undoped GaAs/n-type GaAs epitaxial layer structures utilizing sub-picosecond range carrier-transport processes2010

    • Author(s)
      H. Takeuchi
    • Organizer
      The 17th International Conference on Dynamical Processes in Excited States of Solids (DPC'10)
    • Place of Presentation
      APS Conference Center, Argonne National Laboratory, Argonne, Illinois, USA.
    • Year and Date
      2010-06-20
    • Related Report
      2012 Final Research Report
  • [Presentation] Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons using undoped GaAs/n-type GaAs epitaxial layer structures2010

    • Author(s)
      H.Takeuchi, J.Yanagisawa, S.Tsuruta, H.Yamada, M.Hata, M.Nakayama.
    • Organizer
      The 37th International Symposium on Compound Semiconductors (ICSC2010)
    • Place of Presentation
      高松シンボルタワー/香川県
    • Year and Date
      2010-06-04
    • Related Report
      2010 Annual Research Report
  • [Presentation] Simple strategy for enhancing terahertz emission from coherent longitudinal optical phonons usingundoped GaAs/n-type GaAs epitaxial layer structures2010

    • Author(s)
      H. Takeuchi
    • Organizer
      The 37th International Symposium on Compound Semiconductors (ICSC2010)
    • Place of Presentation
      Takamatsu Symbol Tower,Kagawa, Japan.
    • Year and Date
      2010-05-31
    • Related Report
      2012 Final Research Report
  • [Book] Wave Propagation, "Terahertz Electromagnetic Waves from Semiconductor Epitaxial Layer Structures: Small Energy Phenomena with a Large Amount of Information2011

    • Author(s)
      H. Takeuchi
    • Publisher
      INTEC
    • Related Report
      2012 Final Research Report
  • [Book] Wave Propagation Chapter 6 Terahertz Electromagnetic Waves from Semiconductor Epitaxial Layer Structures : Small Energy Phenomena with a Large Amount of Information2011

    • Author(s)
      Hideo Takeuchi
    • Total Pages
      26
    • Publisher
      INTECH
    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.a-phys.eng.osaka-cu.ac.jp/hikari-g/hikari-g2002/

    • Related Report
      2012 Final Research Report
  • [Remarks]

    • URL

      http://www.e.usp.ac.jp/~edvw/site-takeuchi/

    • Related Report
      2011 Annual Research Report
  • [Remarks] 研究成果公開SITE URL

    • URL

      http://db.spins.usp.ac.jp/view?1=ja&u=151&a2=0000011&a3=0000014&sm=affiliation&s1=ja&sp=1

    • Related Report
      2010 Annual Research Report

URL: 

Published: 2010-08-23   Modified: 2019-07-29  

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