| Project/Area Number |
22760016
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The Institute of Physical and Chemical Research |
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Principal Investigator |
SHIBUYA Keisuke 独立行政法人理化学研究所, 交差相関超構造研究チーム, 特別研究員 (00564949)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
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| Keywords | 二酸化バナジウム / Mott絶縁体 / 強相関電子系 / ヘテロ接合 / 相転移 / 遷移金属酸化物 |
|---|
| Research Abstract |
With an aim of application utilizing strongly correlated electron materials, correlated heterojunctions with vanadium oxides were fabricated. Metal-insulator transition of the most prominent feature in vanadium dioxide emerges even at the heterointerface. It was found that work function of vanadium dioxide can be tuned with electron-or hole-doping. Furthermore, it has been demonstrated that the metal-insulator transition can be controlled by external fields such as electric field, light, and pressure.
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