Development of deep ultraviolet LED and LD on nitride semiconductor
| Project/Area Number |
22760017
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The Institute of Physical and Chemical Research |
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Principal Investigator |
FUJIKAWA Sachie 独立行政法人理化学研究所, テラヘルツ量子素子研究チーム, 基礎科学特別研究員 (90550327)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2010: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | DUV-LED / AlN / AlGaN / sapphire / MOCVD / LED / サファイア / Si基板 |
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| Research Abstract |
I demonstrated high-efficiency 270nm band AlGaN based deep-ultraviolet(DUV) LEDs grown by low-pressure metal-organic chemical-vapor deposition(LP-MOCVD). The high efficiency DUV-LEDs were achieved by using a-axis oriented c-plane sapphire substrates in order to obtain a high quality AlN, introducing the light-doping of Si to AlGaN quantum well emitting region, using the multi quantum barriers layer, optimizing the band lineup and so on. As a result, I made found growing the easily good AlN surface. Additionally, the maximum light output power and maximum external quantum efficiency of DUV-LEDs were 33mW and about 4%, respectively.
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Report
(3 results)
Research Products
(45 results)
