| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2012: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Research Abstract |
Studies have been conducted for the realization of high efficient spin injection into graphene. Dependences of the peaks shifts of the Raman bands on the graphene layers number and metal species at the graphene/metal interfaces reveal that the interfacial interactions are dramatically different between single layer and multilayer graphenes. In situ analysis was performed on the graphene growth in ultrahigh vacuum chemical vapor deposition by exposing the epitaxial Ni(111) thin film to benzene vapor. It is shown that the highly uniform single- and bi-layer graphenes can be synthesized by the control of benzene exposure in the range of 10-10 5 langmuirs, reflecting a change in the graphene growth-rate by three orders of magnitude in between the first and second layer. Based on the above results, the graphene lateral devices with bottom contact-configuration were fabricated.
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