| Project/Area Number |
22760043
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Applied optics/Quantum optical engineering
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| Research Institution | The University of Tokushima |
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Principal Investigator |
MORITA Ken 徳島大学, 大学院・ソシオテクノサイエンス研究部, 特任講師 (30448344)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 光制御 / 量子ドット / 半導体光共振器 / 超高速光スイッチ / 半導体スピン物性 / 光物性 / 光スイッチ / 半導体物性 |
|---|
| Research Abstract |
We fabricated the GaAs/ AlAs multilayer cavity with Er-doped InAs quantum dots(QDs) for the ultrafast all optical switching due to the electron spin polarization rotation. The structure and its carrier decay time were characterized by the optical reflection and time-resolved optical measurements, respectively. In the optical communication waveband(~ 1. 5μm), we showed the fast decaying(<10 ps) electron spins are strongly polarized in the Er-doped InAs QDs in the cavity by the circular polarization time-resolved pump and probe methods. This indicates that the ultrafast all optical switching due to the electron spin polarization rotation is expected using the Er-doped InAs QD cavity.
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