| Project/Area Number |
22760228
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Japan Advanced Institute of Science and Technology |
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Principal Investigator |
AKABORI Masashi 北陸先端科学技術大学院大学, ナノマテリアルテクノロジーセンター, 助教 (50345667)
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| Project Period (FY) |
2010 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2010: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
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| Keywords | 選択成長 / (110) / InAs / ナノワイヤ / 電界効果トランジスタ / -110 / トランジスタ |
|---|
| Research Abstract |
We formed in-plane InAs nanowires using selective-area molecular beam epitaxy on GaAs(110) masked substrates with a certain condition. Moreover, we fabricated planar nanowire field-effect transistors by conventional lithography. We measured their output and transfer characteristics at room temperature, and magneto-conductivity at low temperatures. Maximum current and trans-conductance are 2. 3A/mm and 4. 9mS/mm, respectively, and spin-orbit coupling is observed.
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