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Study on bound exciton states of isoelectronic centers

Research Project

Project/Area Number 22760229
Research Category

Grant-in-Aid for Young Scientists (B)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionKobe University

Principal Investigator

HARADA Yukihiro  神戸大学, 大学院・工学研究科, 助教 (10554355)

Project Period (FY) 2010 – 2011
Project Status Completed (Fiscal Year 2011)
Budget Amount *help
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Keywords束縛励起子 / 等電子トラップ / 光物性 / 電子・電気材料 / 半導体物性
Research Abstract

Impurity centers in a semiconductor have been attracting a strong interest for the realization of the solid-state photon sources with the specific emission wavelength. In this work, we achieved an extremely high uniformity of the emission wavelength for the exciton bound to the nitrogen(N) pairs. We studied the spatial localization of excitons bound to N pairs in Nδ-doped GaAs. Furthermore, we studied the bound exciton-acoustic phonon coupling in Nδ-doped GaAs.

Report

(3 results)
  • 2011 Annual Research Report   Final Research Report ( PDF )
  • 2010 Annual Research Report
  • Research Products

    (60 results)

All 2012 2011 2010 Other

All Journal Article (12 results) (of which Peer Reviewed: 12 results) Presentation (46 results) Remarks (2 results)

  • [Journal Article] Near-field photoluminescence spectroscopy of CdTe/Cd_<0.75>Mn_<0.25>Te tilted superlattices2012

    • Author(s)
      Y.Harada, T.Kita, K.Matsuda, Y.Kanemitsu, H.Mariette
    • Journal Title

      Physica Status Solidi C

      Volume: 9 Issue: 2 Pages: 262-265

    • DOI

      10.1002/pssc.201100278

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Intermediate band photovoltaic based on interband-intraband transitions using In_<0.53>Ga_<0.47>AS/Inp superlattice2011

    • Author(s)
      W.G.Hu, Y.Harada, A.Hasegawa, T.Inoue, O.Kojima, T.Kita
    • Journal Title

      Progress in Photovoltaics : Research and Applications

      Volume: (in press)(掲載確定) Issue: 4 Pages: 472-480

    • DOI

      10.1002/pip.1208

    • Year and Date
      2011-11-25
    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magneto-Photoluminescence Spectroscopy of Exciton Fine Structure in Nitrogenδ-Doped GaAs2011

    • Author(s)
      Y. Harada, Y. Horiuchi, O. Kojima, T. Kita, and O. Wada
    • Journal Title

      AIP Conference Proceedings

      Volume: Vol.1399 Pages: 87-88

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Extremely uniform bound exciton states in nitrogenδ-doped GaAs studied by photoluminescence spectroscopy in external magnetic fields2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Journal Title

      Journal of Applied Physics

      Volume: Vol.110, No.8

    • NAID

      120003609782

    • URL

      http://www.lib.kobe-u.ac.jp/infolib/meta_pub/G0000003kernel_90001617

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Interaction between conduction-band edge and nitrogenrelated localized levels in nitrogen doped GaAs2011

    • Author(s)
      Y. Harada, O. Kojima, T. Kita, and O. Wada
    • Journal Title

      Physica Status Solidi C

      Volume: Vol.8, No.2 Pages: 365-367

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Bound biexciton luminescence in nitrogenδ-doped GaAs2011

    • Author(s)
      Y. Harada, O. Kojima, T. Kita, and O. Wada
    • Journal Title

      Physica Status Solidi B

      Volume: Vol.248, No.2 Pages: 464-467

    • Related Report
      2011 Final Research Report
    • Peer Reviewed
  • [Journal Article] Multidirectional Observation of Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots2011

    • Author(s)
      Y.Ikeuchi, T.Inoue, M.Asada, Y.Harada. T.Kita, E.Taguchi, H.Yasuda
    • Journal Title

      Applied Physics Express

      Volume: 4 Issue: 6 Pages: 062001-062001

    • DOI

      10.1143/apex.4.062001

    • NAID

      10029000096

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks2011

    • Author(s)
      M.Usman, T.Inoue, Y.Harada, G.Klimeck, T.Kita
    • Journal Title

      Physical Review B

      Volume: 84 Issue: 11

    • DOI

      10.1103/physrevb.84.115321

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Extremely Uniform Bound Exciton States in Nitrogen δ-doped GaAs Studied by Photoluminescence Spectroscopy in External Magnetic Fields2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Journal Title

      J. Appl. Phys.

      Volume: Vol. 110 Issue: 8

    • DOI

      10.1063/1.3654015

    • NAID

      120003609782

    • Related Report
      2011 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Bound biexciton luminescence in nitrogen δ-doped GaAs2011

    • Author(s)
      Yukihiro Harada
    • Journal Title

      Physica Status Solidi B

      Volume: 248 Pages: 464-467

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interaction between conduction-band edge and nitrogen-related localized levels in nitrogen δ-doped GaAs2011

    • Author(s)
      Yukihiro Harada
    • Journal Title

      Physica Status Solidi C

      Volume: 8 Pages: 365-367

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Magneto-Photoluminescence Spectroscopy of Exciton Fine Structure in Nitrogen δ-Doped GaAs2011

    • Author(s)
      Yukihiro Harada
    • Journal Title

      AIP Conference Proceedings

      Volume: (in press)

    • Related Report
      2010 Annual Research Report
    • Peer Reviewed
  • [Presentation] 窒素をデルタドープしたGaAsにおける束縛励起子発光線幅の温度依存性2012

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] GaAsエピタキシャル界面への窒素のデルタドーピングと高均一発光特性2012

    • Author(s)
      喜多隆, 原田幸弘
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] 近接積層InAs/GaAs量子ドットの光物性2012

    • Author(s)
      高橋章浩、池内佑一郎、小西康太、別所侑亮、原田幸弘、喜多隆、田口英次、保田英洋
    • Organizer
      第59回応用物理学関係連合講演会
    • Place of Presentation
      早稲田大学
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接積層量子ドット成長を利用した偏波無依存光応答の実現2011

    • Author(s)
      小西康太、池内佑一郎、原田幸弘、喜多隆、田口栄次、保田英洋
    • Organizer
      平成23年度第1回半導体エレクトロニクス部門委員会研究会
    • Place of Presentation
      神戸大学
    • Year and Date
      2011-10-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] 光共振器を有ずる中間バンド型太陽電池の光吸収増強効果2011

    • Author(s)
      前田剛志、小島磨、原田幸弘、喜多隆
    • Organizer
      平成23年度第1回半導体エレクトロニクス部門委員会研究会
    • Place of Presentation
      神戸大学
    • Year and Date
      2011-10-21
    • Related Report
      2011 Annual Research Report
  • [Presentation] Capping layer dependence of bound exciton luminescence in nitrogenδ-doped GaAs2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Moriyama
    • Year and Date
      2011-07-01
    • Related Report
      2011 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子における励起子-格子相互作用2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      第22回光物性研究会
    • Place of Presentation
      熊本大学
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogenδ-Doped GaAs2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Aichi Industry & Labor Center(WINC AICHI), Nagoya
    • Related Report
      2011 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子分子の磁気光学特性2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      日本物理学会2011年秋季大会
    • Place of Presentation
      富山大学
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子のフォノンサイドバンド発光2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] 窒素をデルタドープしたGaAsにおける束縛励起子発光線の起源2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      第72回応用物理学会学術講演
    • Place of Presentation
      山形大学
    • Related Report
      2011 Final Research Report
  • [Presentation] Diamagnetic shift of exciton bound to the nitrogen pairs in GaAs2011

    • Author(s)
      Y. Harada, T. Kubo, T. Inoue, O. Kojima, and T. Kita
    • Organizer
      The 38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin, Germany
    • Related Report
      2011 Annual Research Report 2011 Final Research Report
  • [Presentation] 窒素をデルタドープしたGaAsにおける束縛励起子発光線のキャップ層成長条件依存性2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2011 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子の磁気光学特性2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学
    • Related Report
      2011 Final Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子の輻射再結合寿命2011

    • Author(s)
      原田幸弘, 久保輝宜, 井上知也, 小島磨, 喜多隆
    • Organizer
      「ナノ構造・物性」第3回研究会
    • Place of Presentation
      神戸大学
    • Related Report
      2011 Final Research Report
  • [Presentation] Near-field photoluminescence spectroscopy of CdTe/Cd_<0.75>Mn_<0.25>Te tilted superlattices2011

    • Author(s)
      Y.Harada, T.Kita, K.Matsuda, Y.Kanemitsu, H.Mariette
    • Organizer
      The 38th International Symposium on Compound Semiconductors
    • Place of Presentation
      Berlin, Germany
    • Related Report
      2011 Annual Research Report
  • [Presentation] Two-photons transition in intermidiate band solar cells2011

    • Author(s)
      W.G.Hu, Y.Harada, T.Inoue, O.Kojima, T.Kita
    • Organizer
      The 37th IEEE Photovoltaic Specialist Conference
    • Place of Presentation
      Seattle, Washington
    • Related Report
      2011 Annual Research Report
  • [Presentation] Electronic states in multiply stacked InAs/GaAs quantum dots studied by polarized photoluminescence spectroscopy2011

    • Author(s)
      Y.Ikeuchi, M.Asada, T.Inoue, Y.Harada, O.Kojima, T.Kita
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Moriyama
    • Related Report
      2011 Annual Research Report
  • [Presentation] Capping layer dependence of bound exciton luminescence in nitrogen δ-doped GaAs2011

    • Author(s)
      Y.Harada, T.Kubo, T.Inoue, O.Kojima, T.Kita
    • Organizer
      30th Electronic Materials Symposium
    • Place of Presentation
      Laforet Biwako, Moriyama
    • Related Report
      2011 Annual Research Report
  • [Presentation] 窒素をデルタドープしたGaAsにおける束縛励起子発光線の起源2011

    • Author(s)
      原田幸弘、久保輝宜、井上知也、小島磨、喜多隆
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Annual Research Report
  • [Presentation] 不純物制御したInAs量子ドットにおける発光再結合ダイナミックス2011

    • Author(s)
      長谷川隆一、井上知也、田中秀治、原田幸弘、小島磨、喜多隆
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Annual Research Report
  • [Presentation] 近接積層に伴う量子ドットのフォトルミネッセンス偏光特性2011

    • Author(s)
      池内佑一郎、麻田将貴、井上知也、原田幸弘、喜多隆、田口栄次、保田英洋
    • Organizer
      第72回応用物理学会学術講演会
    • Place of Presentation
      山形大学
    • Related Report
      2011 Annual Research Report
  • [Presentation] Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots2011

    • Author(s)
      T.Kita, T.Inoue, Y.Harada
    • Organizer
      Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures
    • Place of Presentation
      Linz, Austria
    • Related Report
      2011 Annual Research Report
  • [Presentation] Effect of Capping Layer Growth on Bound Exciton Luminescence in Nitrogen δ-Doped GaAs2011

    • Author(s)
      Y.Harada, T.Kubo, T.Inoue, O.Kojima, T.Kita
    • Organizer
      2011 International Conference on Solid State Devices and Materials
    • Place of Presentation
      Aichi Industry & Labor Center (WINC AICHI), Nagoya
    • Related Report
      2011 Annual Research Report
  • [Presentation] Optical Properties of Quantum Dot Superlattices2011

    • Author(s)
      T.Kita, O.Kojima, Y.Harada
    • Organizer
      8th International Conference on Flow Dynamics
    • Place of Presentation
      Sendai, Miyagi
    • Related Report
      2011 Annual Research Report
  • [Presentation] Suppression of Nonradiative Recombination Process in Directly Si-Doped InAs Quantum Dots2011

    • Author(s)
      R.Hasegawa, T.Inoue, H.Tanaka, Y.Harada, O.Kojima, T.Kita
    • Organizer
      21st International Photovoltaic Science and Engineering Conference
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Related Report
      2011 Annual Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子の輻射再結合寿命2011

    • Author(s)
      原田幸弘
    • Organizer
      「ナノ構造・物性」第3回研究会
    • Place of Presentation
      神戸大学(兵庫県)
    • Related Report
      2010 Annual Research Report
  • [Presentation] 近接多層積層量子ドットのフォトルミネッセンス偏光特性2011

    • Author(s)
      池内佑一郎
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAs中の窒素ペアに束縛された励起子の磁気光学特性2011

    • Author(s)
      原田幸弘
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒素をデルタドープしたGaAsにおける束縛励起子発光線のキャップ層成長条件依存性2011

    • Author(s)
      原田幸弘
    • Organizer
      第58回応用物理学関係連合講演会
    • Place of Presentation
      神奈川工科大学(神奈川県)
    • Related Report
      2010 Annual Research Report
  • [Presentation] 量子ドットの多層積層化に伴う偏光異方性の発現と制御2010

    • Author(s)
      池内佑一郎
    • Organizer
      日本材料学会平成22年度第2回半導体エレクトロニクス部門研究会
    • Place of Presentation
      大阪府立大学(大阪府)
    • Year and Date
      2010-11-20
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAs中の窒素等電子トラップ束縛励起子の発光ダイナミクス2010

    • Author(s)
      久保輝宜, 井上知也, 原田幸弘, 小島磨, 喜多隆
    • Organizer
      第21回光物性研究会
    • Place of Presentation
      大阪市立大学
    • Related Report
      2011 Final Research Report
  • [Presentation] 窒素をデルタドープしたGaAsにおける励起子微細構造の反磁性シフト2010

    • Author(s)
      原田幸弘, 久保輝宜, 小島磨, 喜多隆
    • Organizer
      第21回光物性研究会
    • Place of Presentation
      大阪市立大学
    • Related Report
      2011 Final Research Report
  • [Presentation] III-V半導体中不純物制御と励起子物性2010

    • Author(s)
      原田幸弘, 喜多隆
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学
    • Related Report
      2011 Final Research Report
  • [Presentation] Magneto-Photoluminescence Spectroscopy of Exciton Fine Structure in Nitrogenδ-Doped GaAs2010

    • Author(s)
      Y. Harada, Y. Horiuchi, O. Kojima, T. Kita, and O. Wada
    • Organizer
      The 30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, Korea
    • Related Report
      2011 Final Research Report
  • [Presentation] Bound Biexciton Luminescence in Nitrogenδ-Doped GaAs2010

    • Author(s)
      Y. Harada, O. Kojima, T. Kita, and O. Wada
    • Organizer
      The 9th International Conference on Excitonic and Photonic Processes in Condensed and Nano Materials
    • Place of Presentation
      Brisbane, Queensland, Australia
    • Related Report
      2011 Final Research Report
  • [Presentation] Interaction between Conduction-Band Edge and Nitrogen-Related Localized Levels in Nitrogenδ-Doped GaAs2010

    • Author(s)
      Y. Harada, O. Kojima, T. Kita, and O. Wada
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      Takamatsu, Japan
    • Related Report
      2011 Final Research Report
  • [Presentation] Emission properties of excitons strongly localized to nitrogen pairs in GaAs2010

    • Author(s)
      Y. Harada and T. Kita
    • Organizer
      The International Conference on Nanophotonics 2010
    • Place of Presentation
      Tsukuba, Japan
    • Related Report
      2011 Final Research Report
  • [Presentation] Emission properties of excitons strongly localized to nitrogen pairs in GaAs2010

    • Author(s)
      Yukihiro Harada
    • Organizer
      The International Conference on Nanophotonics 2010
    • Place of Presentation
      つくば国際会議場(茨城県)(Invited Talk)(招待講演)
    • Related Report
      2010 Annual Research Report
  • [Presentation] Interaction between Conduction-Band Edge and Nitrogen-Related Localized Levels in Nitrogen δ-Doped GaAs2010

    • Author(s)
      Yukihiro Harada
    • Organizer
      The 37th International Symposium on Compound Semiconductors
    • Place of Presentation
      高松シンボルタワー国際会議場(香川県)(招待講演)
    • Related Report
      2010 Annual Research Report
  • [Presentation] Bound Biexciton Luminescence in Nitrogen δ-Doped GaAs2010

    • Author(s)
      Yukihiro Harada
    • Organizer
      The 9th International Conference on Excitonic and Photonic Processes in Condensed and Nano Materials
    • Place of Presentation
      Brisbane, Queensland, Australia
    • Related Report
      2010 Annual Research Report
  • [Presentation] Magneto-Photoluminescence Spectroscopy of Exciton Fine Structure in Nitrogen δ-Doped GaAs2010

    • Author(s)
      Yukihiro Harada
    • Organizer
      The 30th International Conference on the Physics of Semiconductors
    • Place of Presentation
      Seoul, (Korea)
    • Related Report
      2010 Annual Research Report
  • [Presentation] III-V半導体中不純物制御と励起子物性2010

    • Author(s)
      原田幸弘
    • Organizer
      2010年秋季第71回応用物理学会学術講演会
    • Place of Presentation
      長崎大学(長崎県)(招待講演)
    • Related Report
      2010 Annual Research Report
  • [Presentation] In-Plane Polarization Anisotropy in Vertically Stacked InAs Quantum Dots2010

    • Author(s)
      Y.Ikeuchi
    • Organizer
      The 6th International Workshop on Nano-scale Spectroscopy and Nanotechnology
    • Place of Presentation
      神戸大学(兵庫県)
    • Related Report
      2010 Annual Research Report
  • [Presentation] 窒素をデルタドープしたGaAsにおける励起子微細構造の反磁性シフト2010

    • Author(s)
      原田幸弘
    • Organizer
      第21回光物性研究会
    • Place of Presentation
      大阪市立大学(大阪府)
    • Related Report
      2010 Annual Research Report
  • [Presentation] GaAs中の窒素等電子トラップ束縛励起子の発光ダイナミクス2010

    • Author(s)
      久保輝宜
    • Organizer
      第21回光物性研究会
    • Place of Presentation
      大阪市立大学(大阪府)
    • Related Report
      2010 Annual Research Report
  • [Remarks]

    • URL

      http://www.research.kobe-u.ac.jp/eng-photonics/harada/index.html

    • Related Report
      2011 Final Research Report
  • [Remarks]

    • URL

      http://www.research.kobe-u.ac.jp/eng-photonics/harada/index.html

    • Related Report
      2011 Annual Research Report

URL: 

Published: 2010-08-23   Modified: 2016-04-21  

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