Study on bound exciton states of isoelectronic centers
| Project/Area Number |
22760229
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kobe University |
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Principal Investigator |
HARADA Yukihiro 神戸大学, 大学院・工学研究科, 助教 (10554355)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Keywords | 束縛励起子 / 等電子トラップ / 光物性 / 電子・電気材料 / 半導体物性 |
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| Research Abstract |
Impurity centers in a semiconductor have been attracting a strong interest for the realization of the solid-state photon sources with the specific emission wavelength. In this work, we achieved an extremely high uniformity of the emission wavelength for the exciton bound to the nitrogen(N) pairs. We studied the spatial localization of excitons bound to N pairs in Nδ-doped GaAs. Furthermore, we studied the bound exciton-acoustic phonon coupling in Nδ-doped GaAs.
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Report
(3 results)
Research Products
(60 results)
