| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
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| Research Abstract |
Impurity centers in a semiconductor have been attracting a strong interest for the realization of the solid-state photon sources with the specific emission wavelength. In this work, we achieved an extremely high uniformity of the emission wavelength for the exciton bound to the nitrogen(N) pairs. We studied the spatial localization of excitons bound to N pairs in Nδ-doped GaAs. Furthermore, we studied the bound exciton-acoustic phonon coupling in Nδ-doped GaAs.
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