Project/Area Number |
22760230
|
Research Category |
Grant-in-Aid for Young Scientists (B)
|
Allocation Type | Single-year Grants |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Nara Institute of Science and Technology |
Principal Investigator |
NISHIDA Takashi 奈良先端科学技術大学院大学, 物質創成研究科, 助教 (80314540)
|
Project Period (FY) |
2010 – 2011
|
Project Status |
Completed (Fiscal Year 2011)
|
Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2010: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
|
Keywords | 自己組織化 / ナノテクノロジ / 強誘電体 / 薄膜 / スパッタ法 / 原子平坦基板 / PbTiO3 / セラミックス / ナノテクノロジー |
Research Abstract |
The fabrication of ferroelectric nanocrystal and high quality thin films has been widely interesting because of new ferroelectric devices such as rf-reconfigurable devices. The fabrication of nanocrystal array, that is, position control of nanocrystal growth on atomically flat sapphire substrates was developed. In order to measure the electric and rf properties of nanocrystal and thin films, nano-sized pattering and analysis for the obtained materials were performed. The low voltage operation and new frequency conversion devices were successfully obtained.
|