| Project/Area Number |
22760232
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 電気・電子材料 / ミスト / 薄膜 / 成長 / 加工 / 電子デバイス / ミスト(液滴) / 大気圧プロセス / 化学気相成長(CVD)法 / 液滴の挙動 / 反応メカニズム / 金属酸化物薄膜 / デバイス作製工程の非真空化 / 薄膜トランジスタ(TFT) / 薄膜成長 / 薄膜食刻(エッチング) / ミストの挙動 / ミスト法の位置付け |
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| Research Abstract |
It succeeded in clarifying the mechanism and behavior about the mist method. As a result, any researches have been stepped up. Moreover, the index of non-vacuum process conversion of the TFT fabrication process was demonstrated. Application development of the mist CVD to the electronic device fabrication technology was promoted.
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