Study on solar-cells using InN/GaN superlattice peudo-alloy

• Project/Area Number: 22760233
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Waseda University
• Principal Investigator: KAWAHARAZUKA Atsushi 早稲田大学, 高等研究所, 准教授 (40329082)
• Project Period (FY): 2010 – 2012
• Project Status: Completed (Fiscal Year 2012)
• Budget Amount: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000); Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000); Fiscal Year 2010: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
• Keywords: InN / 分子線エピタキシー / 太陽電池 / 窒化物半導体 / 超格子 / 励起子 / 光吸収 / 直接遷移 / 間接遷移

Research Abstract

Implementation of highly efficient semiconductor solar-cells are investigated. Semiconductor hetero-structures controlled in nano-meter-scale (superlattice) is employed as the active layer to enhance the efficiency of the solar-cells by increasing the absorption of sunlight. Theoretical and experimental investigations are performend on the AlAs/GaAs superlattices as prototypes to confirm the validity of the superlattice active layer. Growth of InN by molecular beam epitaxy is investigated for the applications of InN/GaN short-period superlattice.

Research Products

• [Journal Article] Excitonic absorption on AlGaAs/GaAs superlattice solar cells (2012)
  • Author(s): J. Nishinaga, A. Kawaharazuka, K. Onomitsu, K. H. Ploog, and Y. Horikoshi
  • Journal Title: Physica Status solidi C 9 Pages: 330-333
  • Peer Reviewed
• [Journal Article] Successful growth of Cu_2Se-free CuGaSe_2 by Migration-Enhanced Epitaxy (2012)
  • Author(s): M. Fujita, T. Sato, T. Kitada, A. Kawaharazuka, and Y. Horikoshi
  • Journal Title: J. Vacum. Sci. Tech. B Volume: 30
  • Peer Reviewed
• [Journal Article] Excitonic absorption on AlGaAs/GaAs superlattice solar cells (2012)
  • Author(s): J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
  • Journal Title: Physica Status solidi C Volume: 9 Issue: 2 Pages: 330-333
  • DOI: 10.1002/pssc.201100276
  • Peer Reviewed
• [Journal Article] Successful growth of Cu2Se-free CuGa2Se2 by Migration-Enhanced Epitaxy (2012)
  • Author(s): M.Fujita, T.Sato, T.Kitada, A.Kawaharazuka, Y.Horikoshi
  • Journal Title: J.Vac.Sci.Technol.B Volume: 30 Issue: 2
  • DOI: 10.1116/1.3690456
  • Peer Reviewed
• [Journal Article] Growth of CuGaSe_2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy (2011)
  • Author(s): M. Fujita, A. Kawaharazuka, J. Nishinaga, K. H. Ploog, and Y. Horikoshi
  • Journal Title: Jpn. J. Appl. Phys Volume: 50 Pages: 125502-125502
  • Peer Reviewed
• [Journal Article] Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy (2011)
  • Author(s): A. Kawaharazuka, K. Onomitsu, J. Nishinaga, and Y. Horikoshi
  • Journal Title: J. Cryst. Growth Volume: 323 Pages: 504-504
  • Peer Reviewed
• [Journal Article] Effect of excitons in AlGaAs / GaAs superlattice solar cells (2011)
  • Author(s): J. Nishinaga, A. Kawaharazuka, K. Onomitsu, K. H. Ploog, and Y. Horikoshi
  • Journal Title: Jpn. J. Appl. Phys Volume: 50 Pages: 52302-52302
  • NAID: 40018812632
  • Peer Reviewed
• [Journal Article] Effect of excitons in AlGaAs/GaAs superlattice solar cells (2011)
  • Author(s): J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Issue: 5R Pages: 052302-052302
  • DOI: 10.1143/jjap.50.052302
  • NAID: 40018812632
  • Peer Reviewed
• [Journal Article] Effect of excitons on the absorption in the solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy (2011)
  • Author(s): A.Kawaharazuka, K.Onomitsu, J.Nishinaga, Y.Horikoshi
  • Journal Title: J.Cryst.Growth Volume: 323 Issue: 1 Pages: 504-507
  • DOI: 10.1016/j.jcrysgro.2010.12.051
  • Peer Reviewed
• [Journal Article] Growth of CuGaSe2 Layers on Closely Lattice-Matched GaAs Substrates by Migration-Enhanced Epitaxy (2011)
  • Author(s): M.FUJITA, A.KAWAHARAZUKA, J.NISHINAGA, K.H.PLOOG, Y.HORIKOSHI
  • Journal Title: Jpn.J.Appl.Phys. Volume: 50 Issue: 12R Pages: 125502-125502
  • DOI: 10.1143/jjap.50.125502
  • Peer Reviewed
• [Journal Article] Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy (2010)
  • Author(s): A. Kawaharazuka, T. Yoshizaki, T. Hiratsuka, and Y. Horikoshi
  • Journal Title: Phys. Status Solidi C Volume: 7 Pages: 342-342
  • Peer Reviewed
• [Presentation] CuInSe2/CuGaSe2超格子の吸収効率 (2012)
  • Author(s): 河原塚篤, 藤田実樹, 堀越佳治
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] Absorption efficiency of CuGaSe_2/CuInSe_2 superlattice (2012)
  • Author(s): A. Kawaharazuka, M. Fujita, and Y. Horikoshi
  • Organizer: WeA-1-4, The 17th international conference on molecular beam epitaxy Nara
  • Place of Presentation: Japan
• [Presentation] Characteristics of CuGaSe_2 layers grown on GaAs substrates (2012)
  • Author(s): M. Fujita, A. Kawaharazuka, and Y. Horikoshi
  • Organizer: ThP-28, The 17th international conference on molecular beam epitaxy Nara
  • Place of Presentation: Japan
• [Presentation] GaAs/AlAs Superlattice Solar-Cell with X-Electron Conduction (2012)
  • Author(s): A. Kawaharazuka, K. Onomitsu, and Y. Horikoshi
  • Organizer: Tu-3A.5, 39th International Symposium on Compound Semiconductors
  • Place of Presentation: Santa Barbara, CA, USA
• [Presentation] 「超格子エキシトン太陽電池」日本結晶成長学会ナノ構造・エピタキシャル成長分科会シンポジウム (2012)
  • Author(s): 河原塚篤
  • Organizer: 「高効率ナノエピタキシャル太陽電池の最先端」、日本結晶成長学会ナノ構造・エピタキシャル成長分科会
  • Place of Presentation: 東京大学生産技術研究所
• [Presentation] GaAs/AlAs Superlattice Solar-Cell with X-Electron Conduction (2012)
  • Author(s): A. Kawaharazuka, K. Onomitsu, and Y. Horikoshi
  • Organizer: 39th International Symposium on Compound Semiconductors
  • Place of Presentation: Santa Barbara, CA, USA
• [Presentation] Absorption efficiency of CuGaSe2/CuInSe2 superlattice (2012)
  • Author(s): A.Kawaharazuka, M. Fujita and Y. Horikoshi
  • Organizer: 17th international conference on molecular beam epitaxy
  • Place of Presentation: Nara, Japan
• [Presentation] 超格子エキシトン太陽電池 (2012)
  • Author(s): 河原塚篤
  • Organizer: 「高効率ナノエピタキシャル太陽電池の最先端」 日本結晶成長学会ナノ構造・エピタキシャル成長分科会
  • Place of Presentation: 東京大学生産技術研究所
  • Invited
• [Presentation] X電子伝導を用いたAl0.52In0.48P/Ga0.51In0.49P超格子太陽電池 (2012)
  • Author(s): 河原塚篤，小野満恒二，堀越佳治
  • Organizer: 第73回応用物理学会学術講演会、、9月11日-9月14日
  • Place of Presentation: 愛媛･松山大学
• [Presentation] Excitonic Effect on the Semiconductor Solar-Cells with AlGaAs/CaAs Superlattices (2011)
  • Author(s): A.Kawaharaguka, T.Nishinaga, Y.Horikoshi
  • Organizer: 21st International Photovoltaic Science and Engineering Conference
  • Place of Presentation: ヒルトン福岡シーホーク(福岡県)
  • Year and Date: 2011-11-29
• [Presentation] AlGaAs/GaAs超格子太陽電池の吸収効率の評価 (2011)
  • Author(s): 河原塚篤、西永慈郎、堀越佳治
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-31
• [Presentation] 励起子吸収を利用したAlGaAs/GaAs超格子太陽電池 (2011)
  • Author(s): 西永慈郎、河原塚篤、小野満恒二、クラウス・プローク、堀越佳治
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] Excitonic absorption on AlGaAs/GaAs superlattice solar cells (2011)
  • Author(s): J.Nishinaga, A.Kawaharazuka, K.Onomitsu, K.H.Ploog, Y.Horikoshi
  • Organizer: 28th North American Molecular Beam Epitaxy
  • Place of Presentation: サン・ディエゴ(アメリカ)
  • Year and Date: 2011-08-15
• [Presentation] X電子伝導を用いたAlAs/GaAs超格子構造太陽電池の提案 (2011)
  • Author(s): 河原塚篤、小野満恒二、堀越佳治
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-24
• [Presentation] AlGaAs/GaAs超格子太陽電池における励起子吸収 (2011)
  • Author(s): 西永慈郎、河原塚篤、小野満恒二、クラウスプローク、堀越佳治
  • Organizer: 第58回応用物理学関係連合講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2011-03-24
• [Presentation] Excitonic Effect on the Semiconductor Solar-Cells with AlGaAs/GaAs Superlattices (2011)
  • Author(s): A. Kawaharazuka, J. Nishinaga, and Y. Horikoshi
  • Organizer: 21^<st> International Photovoltaic Science and Engineering Conference (PVSEC-21)
  • Place of Presentation: Fukuoka, Japan
• [Presentation] AlGaAs/GaAs超格子構造太陽電池における励起子吸収の効果 (2010)
  • Author(s): 河原塚篤、小野満恒二、西永慈郎、堀越佳治
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎大学
  • Year and Date: 2010-09-15
• [Presentation] Effect of excitons on the absorption in solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy (2010)
  • Author(s): Kawaharazuka, K.Onomitsu, J.Nishinaga, Y.Horikoshi
  • Organizer: 16th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2010-08-23
• [Presentation] Effect of excitons on the absorption in solar-cell with AlGaAs/GaAs superlattice grown by molecular beam epitaxy (2010)
  • Author(s): A. Kawaharazuka, K. Onomitsu, J. Nishinaga, and Y. Horikoshi
  • Organizer: 16^<th> International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Berlin, Germany
• [Book] 高効率太陽電池 (2012)
  • Author(s): 河原塚 篤 他
  • Publisher: エヌ・ティー・エス
• [Book] 高効率太陽電池 第一章六節 AlGaAs/GaAs超格子構造太陽電池の開発 (2012)
  • Author(s): 河原塚篤、堀越佳治 他
  • Total Pages: 376
  • Publisher: 株式会社NTS
• [Patent(Industrial Property Rights)] CGS/CIS超格子太陽電池 (2013)
  • Inventor(s): 小野満恒二、山口浩司、河原塚篤、藤田実樹、西永滋郎、堀越佳治
  • Industrial Property Rights Holder: 日本電信電話(株), (学)早稲田大学
  • Industrial Property Number: 2013-061464
  • Filing Date: 2013-03-25
• [Patent(Industrial Property Rights)] 太陽電池 (2013)
  • Inventor(s): 小野満恒二、山口浩司、河原塚篤、藤田実樹、西永滋郎、堀越佳治
  • Industrial Property Rights Holder: 日本電信電話(株), (学)早稲田大学
  • Filing Date: 2013-03-18
• [Patent(Industrial Property Rights)] 太陽電池 (2013)
  • Inventor(s): 小野満恒二、山口浩司、河原塚篤、藤田実樹、西永滋郎、堀越佳治
  • Industrial Property Rights Holder: 小野満恒二、山口浩司、河原塚篤、藤田実樹、西永滋郎、堀越佳治
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-054639
  • Filing Date: 2013-03-18
• [Patent(Industrial Property Rights)] 太陽電池 (2012)
  • Inventor(s): 堀越佳治、河原塚篤、小野満恒二、山口浩司
  • Industrial Property Rights Holder: 日本電信電話(株), (学)早稲田大学
  • Industrial Property Number: 2012-166626
  • Filing Date: 2012-07-27