Study on solar-cells using InN/GaN superlattice peudo-alloy
| Project/Area Number |
22760233
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | Waseda University |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2010 – 2012
|
| Project Status |
Completed (Fiscal Year 2012)
|
| Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2012: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2011: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2010: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
|
|---|
| Keywords | InN / 分子線エピタキシー / 太陽電池 / 窒化物半導体 / 超格子 / 励起子 / 光吸収 / 直接遷移 / 間接遷移 |
|---|
| Research Abstract |
Implementation of highly efficient semiconductor solar-cells are investigated. Semiconductor hetero-structures controlled in nano-meter-scale (superlattice) is employed as the active layer to enhance the efficiency of the solar-cells by increasing the absorption of sunlight. Theoretical and experimental investigations are performend on the AlAs/GaAs superlattices as prototypes to confirm the validity of the superlattice active layer. Growth of InN by molecular beam epitaxy is investigated for the applications of InN/GaN short-period superlattice.
|
Report
(4 results)
Research Products
(36 results)
