超高速電子デバイス開発を見据えたInN表面改質手法の検討

• Project/Area Number: 22760234
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: Ritsumeikan University
• Principal Investigator: 金子 昌充 Ritsumeikan University, 研究員 (70374709)
• Project Period (FY): 2010
• Project Status: Completed (Fiscal Year 2010)
• Budget Amount: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2010: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)