| Project/Area Number |
22760235
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
|---|
| Research Field |
Electronic materials/Electric materials
|
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| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
TSUYA Daiju 独立行政法人物質・材料研究機構, ナノテクノロジー融合ステーション, 主任エンジニア (10469760)
|
|---|
| Project Period (FY) |
2010 – 2011
|
| Project Status |
Completed (Fiscal Year 2011)
|
| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
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| Keywords | 薄膜・量子構造 / グラフェン / 単電子トランジスタ / 単電子集積回路 / ナノ材料 / ナノ加工 / 集束イオンビーム / トンネルバリア / 量子効果 |
|---|
| Research Abstract |
Graphene is an attractive material as a building block of next-generation electronic devices because of its excellent material property. In this study, we focused on graphene as an island of a single-electron transistor, and researched how to fabricate the device to operate in a higher temperature range and to apply to a single-electron integrated circuit.
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