Study of interface passivation effect on band alignment at metal/semiconductor interface

• Project/Area Number: 22760244
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Tokyo
• Principal Investigator: NISHIMURA Tomonori 東京大学, 大学院・工学系研究科, 技術専門職員 (10396781)
• Project Period (FY): 2010 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2011: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000); Fiscal Year 2010: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
• Keywords: 電子デバイス・集積回路 / フェルミレベルピンニング

Research Abstract

The pinning level at metal/Ge interface is sensitive to the non metal element bonded to interface Ge and to the bond structure of Ge close to the interface. Whereas, the alleviation of Fermi level pinning depends on the inserting film, which is difficult to be explained only by simple models of interface level or by wave function penetration from metal.

Research Products

• [Journal Article] High-Electron-Mobility Ge n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y_2O_3 (2011)
  • Author(s): T.Nishimura, C.H.Lee, T.Tabata, S.K.Wang, K.Nagashio, K.Kita, A.Toriumi
  • Journal Title: Applied Physics Express Volume: 4 Issue: 6 Pages: 064201-064201
  • DOI: 10.1143/apex.4.064201
  • Peer Reviewed
• [Presentation] MIGS-metal layer formation model at metal/Ge Schottky barrier diode interface (2011)
  • Author(s): T. Nishimura and A. Toriumi
  • Organizer: 2011 IEEE 42nd Semiconductor Interface Specialists Conference(SISC)
  • Place of Presentation: Arlington
  • Year and Date: 2011-12-02
• [Presentation] GS-metal layer formation model at metal/Ge Schottky barrier diode interfa (2011)
  • Author(s): T.Nishimura, A.Toriumi
  • Organizer: 2011 IEEE 42nd Semiconductor Interface Specialists Conference (SISC)
  • Place of Presentation: 米国,Arlington
  • Year and Date: 2011-12-02
• [Presentation] A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions (2011)
  • Author(s): T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
  • Organizer: International Conference on Solid State Devices and Materials(SSDM)
  • Place of Presentation: Nagoya
  • Year and Date: 2011-09-29
• [Presentation] A Study of Fermi-level Pinning in Ge Schottky and MIS Tunnel Junctions (2011)
  • Author(s): T.Nishimura, K.Nagashio, K.Kita, A.Toriumi
  • Organizer: International Conference on Solid State Devices and Materials (SSDM)
  • Place of Presentation: 名古屋
  • Year and Date: 2011-09-29
• [Presentation] 金属/Ge界面に導入した酸化膜と硫化膜がFermi-level pinningに与える影響の比較 (2011)
  • Author(s): 西村知紀, 李忠賢, 長汐晃輔, 喜多浩之, 鳥海明
  • Organizer: 2011年春季第58回応用物理学関係連合講演会
  • Place of Presentation: (震災の影響で予稿集のみ)
  • Year and Date: 2011-03-27
• [Presentation] High-k/GeMOSFETにおける移動度特性の向上 (2011)
  • Author(s): 西村知紀,李忠賢,王盛凱,田畑俊行,長汐晃輔,喜多浩之,鳥海明
  • Organizer: 第16回ゲートスタック研究会-材料・プロセス・評価の物理-
  • Place of Presentation: Tokyo
  • Year and Date: 2011-01-27
• [Presentation] High-k/Ge MOSFETにおける移動度特性の向上 (2011)
  • Author(s): 西村知紀, 李忠賢, 王盛凱, 田畑俊行, 長汐晃輔, 喜多浩之, 鳥海明
  • Organizer: 第16回ゲートスタック研究会-材料・プロセス・評価の物理-
  • Place of Presentation: 東京(東工大)
  • Year and Date: 2011-01-27
• [Presentation] 金属/Ge界面に導入した酸化膜と硫化膜がFermi-level pinningに与える影響の比較 (2011)
  • Author(s): 西村知紀,李忠賢,長汐晃輔,喜多浩之,鳥海明
  • Organizer: 2011年春季第58回応用物理学関係
• [Presentation] Electoron Mobility in High-k Ge MISFETs Goes up to Higher (2010)
  • Author(s): T. Nishimura, C. H. Lee, S. K. Wang, T. Tabata, K. Kita, K. Nagashio, and A. Toriumi
  • Organizer: 2010 Symposiaon VLSI Technology and
  • Place of Presentation: Honolulu
  • Year and Date: 2010-06-17
• [Presentation] Electoron Mobility in High-k Ge MISFETs Goes up to Higher (2010)
  • Author(s): T.Nishimura, C.H.Lee, S.K.Wang, T.Tabata, K.Kita, K.Nagashio, A.Toriumi
  • Organizer: 2010 Symposia on VLSI Technology and Circuits
  • Place of Presentation: 米国,Honolulu
  • Year and Date: 2010-06-17
• [Presentation] Long Range Pinning Interaction in Ultra-thin Insulator-inserted Metal/Germanium Junctions (2010)
  • Author(s): T. Nishimura, K. Kita, K. Nagashio, and A. Toriumi
  • Organizer: 2010 Silicon Nanoelectronics Workshop
  • Place of Presentation: Honolulu
  • Year and Date: 2010-06-13
• [Presentation] Long Range Pinning Interaction in Ultra-thin Insulator-inserted Metal/Germanium Junctions (2010)
  • Author(s): T.Nishimura, K.Kita, K.Nagashio, A.Toriumi
  • Organizer: 2010 Silicon Nanoelectronics Workshop
  • Place of Presentation: 米国,Honolulu
  • Year and Date: 2010-06-13
• [Remarks]
  • URL: http://www.adam.t.u-tokyo.ac.jp