Terahertz oscillating resonant tunneling diode having beam shaping function using three-dimensionally integrated antenna structure

• Project/Area Number: 22760247
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: SUZUKI Safumi 東京工業大学, 総合理工学研究科, 助教 (40550471)
• Project Period (FY): 2010 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000); Fiscal Year 2011: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2010: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: 電子デバイス / 集積回路 / 超高速電子デバイス / テラヘルツ / 超高速デバイス / 量子エレクトロニクス

Research Abstract

Terahertz oscillating resonant tunneling diode with three-dimensionally integrated micro size Yagi antenna array was proposed. The radiation pattern was calculated and fabrication process was studied. A high antenna gain of around 19 dBi was theoretically expected in the RTD oscillator integrated with three element Yagi antenna array. The conditions for fabrication of thin substrate and thick dielectric layer were experimentally studied.

Research Products

• [Journal Article] Estimation of Transit time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers (2012)
  • Author(s): A. Teranishi, S. Suzuki, K. Shizuno, M. Asada, H. Sugiyama, and H. Yokoyama
  • Journal Title: Trans. Electron. IEICE of Japan Volume: vol.E95-C, No.3 Pages: 401-407
  • NAID: 10030610433
  • Peer Reviewed
• [Journal Article] Fundamental Oscillation up to 1. 08THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay (2012)
  • Author(s): A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama
  • Journal Title: IEICE Electron. Express Volume: vol.9, no.5 Pages: 385-390
  • Peer Reviewed
• [Journal Article] Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers (2012)
  • Author(s): A.Teranishi, S.Suzuki, K.Shizuno, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: IEICE Transactions on Electronics Volume: E95-C Issue: 3 Pages: 401-407
  • DOI: 10.1587/transele.E95.C.401
  • NAID: 10030610433
  • ISSN: 0916-8524, 1745-1353
  • Peer Reviewed
• [Journal Article] Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay (2012)
  • Author(s): A.Teranishi, K.Shizuno, S.Suzuki, M.Asada, H.Sugiyama, H. Yokoyama
  • Journal Title: IEICE Electronics Express Volume: 9 Issue: 5 Pages: 385-390
  • DOI: 10.1587/elex.9.385
  • NAID: 130001922359
  • ISSN: 1349-2543
  • Peer Reviewed
• [Journal Article] High Output Power(～400μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers (2011)
  • Author(s): M. Shiraishi, H. Shibayama, K. Ishigaki, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama
  • Journal Title: Appl. Phys. Express Volume: vol.4 Pages: 64101-64101
  • NAID: 10029000452
  • Peer Reviewed
• [Journal Article] Terahertz Oscillators Using Electron Devices-an Approach with Resonant Tunneling Diodes(invited) (2011)
  • Author(s): M. Asada and S. Suzuki
  • Journal Title: IEICE Electron. Express Volume: vol.8, no.14 Pages: 1110-1126
• [Journal Article] Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using In PSchottky Barrier Diode (2011)
  • Author(s): S. Suzuki, K. Karashima, K. Ishigaki, and M. Asada
  • Journal Title: Jpn. J. Appl. Phys. Volume: vol.50 Pages: 80211-80211
  • Peer Reviewed
• [Journal Article] High Uniformity In P-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10^5 A/cm^2 Grown by Metal-Organic Vapor-Phase Epitaxy (2011)
  • Author(s): H. Sugiyama, A. Teranishi, S. Suzuki, and M. Asada
  • Journal Title: J. Crystal Growth Volume: vol.336 Pages: 24-28
  • Peer Reviewed
• [Journal Article] 電子デバイスによるテラヘルツ光源, Room-Temperature Terahertz Oscillation of Electron Devices (2011)
  • Author(s): 浅田雅洋、鈴木左文, M. Asada and S. Suzuki
  • Journal Title: 電気学会論文誌A(基礎・材料共通), J. Institute of Electrical Engineers of Japan Volume: vol.131-A Pages: 21-25
• [Journal Article] Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology,高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現 (2011)
  • Author(s): H. Sugiyama, S. Suzuki, and M. Asada, 杉山弘樹, 鈴木左文, 浅田雅洋
  • Journal Title: NTTTechnical Review, NTT技術ジャーナル Volume: vol.9, no.10, vol.23, no.7 Pages: 12-17
• [Journal Article] High Output Power (～400μW)Oscillators at around 550GHZ Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers (2011)
  • Author(s): M.Shiraishi, H.Shibayama, K.Ishigaki, S.Suzuki, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Express Volume: vol.4 Issue: 6 Pages: 64101-64101
  • DOI: 10.1143/apex.4.064101
  • NAID: 10029000452
  • Peer Reviewed
• [Journal Article] Terahertz oscillators using electron devices - an approach with Resonant tunneling diodes (2011)
  • Author(s): M.Asada, S.Suzuki
  • Journal Title: IEICE Electronics Express Volume: 8 Issue: 14 Pages: 1110-1126
  • DOI: 10.1587/elex.8.1110
  • NAID: 130000959497
  • ISSN: 1349-2543
  • Peer Reviewed
• [Journal Article] Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky BarrierDiode (2011)
  • Author(s): S.Suzuki, K.Karashima, K.Ishigaki, M.Asada
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.50 Issue: 8R Pages: 80211-80211
  • DOI: 10.1143/jjap.50.080211
  • NAID: 40018960973
  • Peer Reviewed
• [Journal Article] High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10^5 A/cm^2 Grown by Metal-Organic Vapor-Phase Epitaxy (2011)
  • Author(s): H.Sugiyama, A.Teranishi, S.Suzuki, M.Asada
  • Journal Title: J.Crystal Growth Volume: Vol.336 Issue: 1 Pages: 24-28
  • DOI: 10.1016/j.jcrysgro.2011.09.010
  • Peer Reviewed
• [Journal Article] 電子デバイスによるテラヘルツ光源 (2011)
  • Author(s): 浅田雅洋、鈴木左文
  • Journal Title: 電気学会論文誌A(基礎・材料共通) Volume: vol.131-A Pages: 21-25
• [Journal Article] 高精度結晶成長技術による共鳴トンネルダイオードテラヘルツ発振器の実現 (2011)
  • Author(s): 杉山弘樹, 鈴木左文, 浅田雅洋
  • Journal Title: NTT技術ジャーナル Volume: vol.23 Pages: 12-17
• [Journal Article] Fundamental Oscillation of up to 915 GHz in Small-Area In GaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas (2010)
  • Author(s): M. Shiraishi, S. Suzuki, A. Teranishi, M. Asada, H. Sugiyama, and H. Yokoyama
  • Journal Title: Jpn. J. Appl. Phys. Volume: vol.49 Pages: 20211-20211
  • Peer Reviewed
• [Journal Article] Measurement of Oscillation Frequency and Spectral Line width of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni-InP Schottky Barrier Diode (2010)
  • Author(s): K. Karashima, R. Yokoyama, M. Shiraishi, S. Suzuki, S. Aoki, and M. Asada
  • Journal Title: Jpn. J. Appl. Phys Volume: Vol.49 Pages: 20208-20208
  • NAID: 210000067885
  • Peer Reviewed
• [Journal Article] Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power(~ 200μW) Using Offset-Fed Slot Antenna and High Current Density (2010)
  • Author(s): K. Hinata, M. Shiraishi, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama
  • Journal Title: Appl. Phys. Express Volume: vol.3 Pages: 14001-14001
  • NAID: 10027013068
  • Peer Reviewed
• [Journal Article] Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature (2010)
  • Author(s): S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama
  • Journal Title: Appl. Phys. Lett. Volume: vol.97
  • Peer Reviewed
• [Journal Article] Fundamental oscillations at～900GHz with low bias voltages in RTDs with spike-doped structures (2010)
  • Author(s): S. Suzuki, K. Sawada, A. Teranishi, M. Asada, H. Sugiyama, and H. Yokoyama
  • Journal Title: Electron. Lett. Volume: vol.46 Pages: 1006-1007
  • Peer Reviewed
• [Journal Article] Extremely High Peak Current Densities of over 1×10^6A/cm^2 in InP-Based In GaAs/AlAs Resonant Tunneling Diodes Grown by Metal-Organic Vapor-Phase Epitaxy (2010)
  • Author(s): H. Sugiyama, H. Yokoyama, A. Teranishi, S. Suzuki, and M. Asada
  • Journal Title: Jpn. J. Appl. Phys. Volume: vol.49
  • Peer Reviewed
• [Journal Article] Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (～200μW) Using Offset-Fed Slot Antenna and High Current Density (2010)
  • Author(s): K.Hinata, M.Shiraishi, S.Suzuki, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Exp. Volume: vol.3
  • NAID: 10027013068
  • Peer Reviewed
• [Journal Article] Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni-InP Schottky Barrier Diode (2010)
  • Author(s): K.Karashima, R.Yokoyama, M.Shiraishi, S.Suzuki, S.Aoki, M.Asada
  • Journal Title: Jpn.J.Appl.Phys. Volume: Vol.49
  • NAID: 210000067885
  • Peer Reviewed
• [Journal Article] Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas (2010)
  • Author(s): M.Shiraishi, S.Suzuki, A.Teranishi, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.49
  • NAID: 40016982478
  • Peer Reviewed
• [Journal Article] Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature (2010)
  • Author(s): S.Suzuki, M.Asada, A.Teranishi, H.Sugiyama, H.Yokoyama
  • Journal Title: Appl.Phys.Lett. Volume: vol.97
  • Peer Reviewed
• [Journal Article] Fundamental oscillations at ～900GHz with low bias voltages in RTDs with spike-doped structures (2010)
  • Author(s): S.Suzuki, K.Sawada, A.Teranishi, M.Asada, H.Sugiyama, H.Yokoyama
  • Journal Title: Electron.Lett. Volume: vol.46 Pages: 1006-1007
  • Peer Reviewed
• [Journal Article] Extremely High Peak Current Densities of over 1×10^6A/cm^2 in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal-Organic Vapor-Phase Epitaxy (2010)
  • Author(s): H.Sugiyama, H.Yokoyama, A.Teranishi, S.Suzuki, M.Asada
  • Journal Title: Jpn.J.Appl.Phys. Volume: vol.49
  • Peer Reviewed
• [Journal Article] 電子デバイスによるテラヘルツ光源 (2010)
  • Author(s): 浅田雅洋、鈴木左文
  • Journal Title: 電気学会論文誌A Volume: vol.131-A(招待論文) Pages: 21-25
• [Presentation] 狭井戸共鳴トンネルダイオードによるテラヘルツ発振素子の高出力化 (2012)
  • Author(s): 金谷英敏
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] ボウタイアンテナ集積型Ni-InP SBDのカットオフ周波数向上と感度測定 (2012)
  • Author(s): 丸山薫
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 東京
  • Year and Date: 2012-03-17
• [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ光源 (2012)
  • Author(s): 鈴木左文
  • Organizer: 電気学会パワー半導体光源とその応用技術調査専門委員会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2012-02-20
• [Presentation] THz Oscillation of Resonant Tunneling Diode and Its Basic Properties for Wireless Transmission (2012)
  • Author(s): 浅田雅洋
  • Organizer: テラヘルツ応用システム研究会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2012-02-10
• [Presentation] Room-Temperature Terahertz Oscillation of Resonant Tunneling Diodes and Preliminary Experiments on Wireless Communication Application (2011)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Japan-Korea Joint Workshop, S2-3
  • Place of Presentation: Nagoya
  • Year and Date: 2011-12-19
• [Presentation] Room-Temperature Terahertz Oscillation of Resonant Tunneling Diodes and Preliminary Experiments on Wireless Communication Application (2011)
  • Author(s): M.Asada
  • Organizer: Japan-Korea Joint Workshop
  • Place of Presentation: Nagoya(招待講演)
  • Year and Date: 2011-12-19
• [Presentation] Wireless Data Transmission at~ 560 GHz with Direct Modulation of RTD Oscillator (2011)
  • Author(s): K. Ishigaki, M. Shiraishi, S. Suzuki, and M. Asada
  • Organizer: Int. Symp. Terahertz Nano-Science & Workshop on Int. Terahertz Research Network Workshop on Int. Terahertz Research Network
  • Place of Presentation: Osaka
  • Year and Date: 2011-11-28
• [Presentation] THz Oscillating Resonant Tunneling Diode and Its Basic Properties for Wireless Communications (2011)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Symp. Terahertz Nano-Science & Workshop on Int. Terahertz Research Network
  • Place of Presentation: Osaka
  • Year and Date: 2011-11-28
• [Presentation] THz Oscillating Resonant Tunneling Diode and Its Basic Properties for Wireless Communications (2011)
  • Author(s): M.Asada
  • Organizer: Terahertz Nano-Science & Workshop on Int.Terahertz Research Network
  • Place of Presentation: Osaka(招待講演)
  • Year and Date: 2011-11-28
• [Presentation] Wireless Data Transmission at ～560 GHz with Direct Modulation of RTD Oscillator (2011)
  • Author(s): K.Ishigaki
  • Organizer: Terahertz Nano-Science & Workshop on Int.Terahertz Research Network
  • Place of Presentation: Osaka
  • Year and Date: 2011-11-28
• [Presentation] 共鳴トンネルダイオードの基本波1THz室温発振 (2011)
  • Author(s): 浅田雅洋
  • Organizer: 第2回集積光デバイスと応用技術時限研究専門委員会(IPDA)研究会
  • Place of Presentation: 東京(招待講演)
  • Year and Date: 2011-11-16
• [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ光源 (2011)
  • Author(s): 浅田雅洋
  • Organizer: 学術振興会第182委員会第11回研究会
  • Place of Presentation: 浜松(招待講演)
  • Year and Date: 2011-10-24
• [Presentation] Intensity Modulation of Sub-Terahertz Oscillating Resonant Tunneling Diode by Irradiation of 1. 55m Laser (2011)
  • Author(s): S. Kaburaki, S. Suzuki, and M. Asada
  • Organizer: IEEE Photonics Conference(IPC 11)
  • Place of Presentation: Arlington/VA
  • Year and Date: 2011-10-13
• [Presentation] Intensity Modulation of Sub-Terahertz Oscillating Resonant Tunneling Diode by Irradiation of 1.55-μm Laser (2011)
  • Author(s): S.Kaburaki
  • Organizer: IEEE Photonics Conference (IPC 11)
  • Place of Presentation: Arlington/VA, USA
  • Year and Date: 2011-10-13
• [Presentation] Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes (2011)
  • Author(s): H. Shibayama, S. Suzuki, M. Shiraishi, M. Asada
  • Organizer: Int. Conf. Infrared and Millimeter Waves & Terahertz Electronics(IRMMW-THz2011)
  • Place of Presentation: Huston
  • Year and Date: 2011-10-05
• [Presentation] Direct Modulation of THz-Oscillating Resonant Tunneling Diodes (2011)
  • Author(s): K. Ishigaki, K. Karashima, M. Shiraishi, H. Shibayama, S. Suzuki, M. Asada
  • Organizer: Int. Conf. Infrared and Millimeter Waves & Terahertz Electronics(IRMMW-THz 2011)
  • Place of Presentation: Huston
  • Year and Date: 2011-10-05
• [Presentation] Direct Modulation of THz-Oscillating Resonant Tunneling Diodes (2011)
  • Author(s): K.Ishigaki
  • Organizer: Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
  • Place of Presentation: Huston, USA
  • Year and Date: 2011-10-05
• [Presentation] Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes (2011)
  • Author(s): H.Shibayama
  • Organizer: Infrared and Millimeter Waves & Terahertz Electronics (IRMMW-THz 2011)
  • Place of Presentation: Huston, USA
  • Year and Date: 2011-10-05
• [Presentation] 共鳴トンネルダイオードテラヘルツ発振器における発振出力のアンテナ幅依存性 (2011)
  • Author(s): 柴山裕孝
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] 共鳴トンネルダイオード発振素子の直接出力変調と変調周波数上限の外部回路依存性 (2011)
  • Author(s): 石垣要
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] 1.55μmレーザ光照射による共鳴トンネルダイオードサブテラヘルツ発振器の出力強度変調 (2011)
  • Author(s): 鏑木新治
  • Organizer: 第72回秋季応用物理学会学術講演会
  • Place of Presentation: 山形
  • Year and Date: 2011-08-31
• [Presentation] Terahertz Oscillation of Inga As/Alas Resonant Tunneling Diode sat Room Temperature (2011)
  • Author(s): S. Suzuki, M. Asada, H. Sugiyama, andH. Yokoyama
  • Organizer: Topical Workshop on Heterostructure Materials(TWHM)
  • Place of Presentation: Gifu, Japan
  • Year and Date: 2011-08-30
• [Presentation] Terahertz Oscillation of InGaAs/AlAs Resonant Tunneling Diodes at Room Temperature (2011)
  • Author(s): S.Suzuki
  • Organizer: Topical Workshop on Heterostructure Materials (TWHM)
  • Place of Presentation: Gifu, Japan(招待講演)
  • Year and Date: 2011-08-30
• [Presentation] Terahertz Oscillation of Resonant Tunneling Diodes at Room Temperature (2011)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Electron Dynamics in Semiconductors, Opto-electronics and Nanostructures(EDISON 17)
  • Place of Presentation: Santa Barbara/CA
  • Year and Date: 2011-08-11
• [Presentation] Terahertz Oscillation of Resonant Tunneling Diodes at Room Temperature (2011)
  • Author(s): M.Asada
  • Organizer: Opto-electronics and Nanostructures (EDISON 17)
  • Place of Presentation: Santa Barbara, USA(招待講演)
  • Year and Date: 2011-08-11
• [Presentation] Room-Temperature THz Oscillation of Resonant Tunneling Diodes (2011)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Symp. Microwave/Terahertz Science and Applications(MTSA 2011)
  • Place of Presentation: Nanjing, China
  • Year and Date: 2011-06-21
• [Presentation] Room-Temperature THz Oscillation of Resonant Tunneling Diodes (2011)
  • Author(s): M.Asada
  • Organizer: Microwave/Terahertz Science and Applications (MTSA 2011)
  • Place of Presentation: Nanjing, China(招待講演)
  • Year and Date: 2011-06-21
• [Presentation] Fundamental Oscillation up to 1. 08 Thin Resonant Tunneling Diodes with High Indium Composition Transit Layers (2011)
  • Author(s): A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama
  • Organizer: Int. Conf. Indium Phosphide & Related Materials(IPRM 2011)
  • Place of Presentation: Berlin
  • Year and Date: 2011-05-24
• [Presentation] High Output Power(~ 400・W) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure (2011)
  • Author(s): M. Shiraishi, H. Shibayama, K. Ishigaki, S. Suzuki, M. Asada, H. Sugiyama, and H. Yokoyama
  • Organizer: Int. Conf. Indium Phosphide & Related Materials(IPRM 2011)
  • Place of Presentation: Berlin
  • Year and Date: 2011-05-24
• [Presentation] High Output Power (～400μW) Oscillators at Around 550 GHz Using Large Area RTD and Optimized Antenna Structure (2011)
  • Author(s): M.Shiraishi
  • Organizer: Indium Phosphide & Related Materials (IPRM 2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High Indium Composition Transit Layers (2011)
  • Author(s): A.Teranishi
  • Organizer: Indium Phosphide & Related Materials (IPRM 2011)
  • Place of Presentation: Berlin, Germany
  • Year and Date: 2011-05-24
• [Presentation] 高インジウム組成電子走行層を有する共鳴トンネルダイオードによる1.08 THzへの基本波発振周波数向上 (2011)
  • Author(s): 寺西豊志, 静野薫, 鈴木左文, 浅田雅洋, 杉山弘樹, 横山春喜
  • Organizer: 第58回応用物理学会学術講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-27
• [Presentation] 大面積RTDとアンテナ構造最適化による550GHz帯高出力(～400μW)発振 (2011)
  • Author(s): 白石誠人, 柴山裕孝, 石垣要, 鈴木左文, 浅田雅洋, 杉山弘樹, 横山春樹
  • Organizer: 第58回応用物理学会学術講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-27
• [Presentation] MIMキャパシタンス減少による共鳴トンネルダイオード発振素子の変調周波数向上 (2011)
  • Author(s): 石垣要, 辛島宏一, 白石誠人, 柴山裕孝, 鈴木左文, 浅田雅洋
  • Organizer: 第58回応用物理学会学術講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-27
• [Presentation] ボウタイアンテナ集積型Ni-InP SBDのカットオフ周波数の向上 (2011)
  • Author(s): 丸山薫, 辛島宏一, 鈴木左文, 浅田雅洋
  • Organizer: 第58回応用物理学会学術講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-27
• [Presentation] 共鳴トンネルダイオード室温THz発振器 (2011)
  • Author(s): 鈴木左文
  • Organizer: 第58回応用物理学会学術講演会
  • Place of Presentation: 厚木
  • Year and Date: 2011-03-26
• [Presentation] 共鳴トンネルダイオードの室温テラヘルツ発振 (2010)
  • Author(s): 鈴木左文, 浅田雅洋
  • Organizer: 電子情報通信学会ED研
  • Place of Presentation: 仙台
  • Year and Date: 2010-12-16
• [Presentation] グレーデッドエミッタによる共鳴トンネルダイオードテラヘルツ発振素子の走行時間短縮 (2010)
  • Author(s): 寺西豊志, 鈴木左文, 静野薫, 浅田雅洋, 杉山弘樹, 横山春喜
  • Organizer: 電子情報通信学会ED研
  • Place of Presentation: 仙台
  • Year and Date: 2010-12-16
• [Presentation] THz Oscillators Using Resonant Tunneling Diodes Int. Conf. Semiconductor Integrated Circuits and Technology (2010)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2010)
  • Place of Presentation: Shanghai
  • Year and Date: 2010-11-02
• [Presentation] THz Oscillators Using Resonant Tunneling Diodes Int.Conf.Semiconductor Integrated Circuits and Technology (2010)
  • Author(s): M.Asada, S.Suzuki
  • Organizer: 10th IEEE International Conference on Solid-Stato and Integrated Circuit Technology (ICSICT-2010)
  • Place of Presentation: Shanghai, China
  • Year and Date: 2010-11-02
• [Presentation] 1. 04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, and H. Yokoyama
  • Organizer: European Optical Society(EOS) Annual Meeting, Terahertz Science and Technology, TOM02
  • Place of Presentation: Paris
  • Year and Date: 2010-10-26
• [Presentation] 1.04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S.Suzuki, M.Asada, A.Teranishi, H.Sugiyama, H.Yokoyama
  • Organizer: European Optical Society (EOS) Annual Meeting, Terahertz Science and Technology
  • Place of Presentation: Paris, France
  • Year and Date: 2010-10-26
• [Presentation] 共鳴トンネルダイオードの室温テラヘルツ発振 (2010)
  • Author(s): 鈴木左文, 浅田雅洋
  • Organizer: 日本学術振興会 第130委員会
  • Place of Presentation: 東京
  • Year and Date: 2010-10-22
• [Presentation] Terahertz Oscillating Inga As/Alas Resonant Tunneling Diodes (2010)
  • Author(s): S. Suzuki and M. Asada
  • Organizer: Int. Conf. Solid State Devices and Materials(SSDM2010)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-09-23
• [Presentation] Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diodes (2010)
  • Author(s): S.Suzuki, M.Asada
  • Organizer: Int.Conf.Solid State Devices and Materials (SSDM 2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-23
• [Presentation] 1.04 THz Fundamental Oscillation of Resonant Tunneling Diode at Room Temperature (2010)
  • Author(s): S.Suzuki, A.Teranishi, M.Asada
  • Organizer: 2nd Japanese-Russian Young Scientists Conference on Nanomaterials and Nnanotechnology
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-09-21
• [Presentation] 共鳴トンネルダイオードによる1.04THz基本波発振 (2010)
  • Author(s): 鈴木左文, 寺西豊志, 浅田雅洋, 杉山弘樹, 横山春喜
  • Organizer: 第71回応用物理学会学術講演会
  • Place of Presentation: 長崎
  • Year and Date: 2010-09-17
• [Presentation] 共鳴トンネルダイオードによる室温テラヘルツ発振 (2010)
  • Author(s): 鈴木左文, 浅田雅洋
  • Organizer: 電子情報通信学会ソサイエティ大会
  • Place of Presentation: 大阪
  • Year and Date: 2010-09-14
• [Presentation] Heterodyne Detection of Output of Sub-THz RTD Oscillator Using Imp-SBD Detector and RTD Local Oscillator (2010)
  • Author(s): K. Karashima, M. Shiraishi, K. Hinata, S. Suzuki and M. Asada
  • Organizer: Int. Conf. Infrared & Millimeter Waves and Terahertz Electronics(IRMMW-THz 2010)
  • Place of Presentation: Rome
  • Year and Date: 2010-09-09
• [Presentation] Heterodyne Detection of Output of Sub-THz RTD Oscillator Using InP-SBD Detector and RTD Local Oscillator (2010)
  • Author(s): K.Karashima, M.Shiraishi, K.Hinata, S.Suzuki, M.Asada
  • Organizer: Int.Conf.Infrared and Millimeterwave & Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2010-09-09
• [Presentation] Increase of Fundamental Oscillation Frequency in Resonant Tunneling Diode with Thin Barrier and Graded Emitter Structures (2010)
  • Author(s): S. Suzuki, A. Teranishi, M. Asada, H. Sugiyama, and H. Yokoyama
  • Organizer: Int. Conf. Infrared, Millimeter, and Terahertz Waves(IRMMW-THz 2010)
  • Place of Presentation: Rome
  • Year and Date: 2010-09-07
• [Presentation] THz Oscillators Using Resonant Tunneling Diodes at Room Temperature (2010)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Conf. Infrared & Millimeter Waves and Terahertz Electronics(IRMMW-THz 2010)
  • Place of Presentation: Rome
  • Year and Date: 2010-09-07
• [Presentation] THz Oscillators Using Resonant Tunneling Diodes at Room Temperature (2010)
  • Author(s): M.Asada, S.Suzuki
  • Organizer: Int.Conf.Infrared and Millimeterwave & Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2010-09-07
• [Presentation] Increase of Fundamental Oscillation Frequency in Resonant Tunneling Diode with Thin Barrier and Graded Emitter Structures (2010)
  • Author(s): S.Suzuki, A.Teranishi, M.Asada, H.Sugiyama, H.Yokoyama
  • Organizer: Int.Conf.Infrared and Millimeterwave & Terahertz Electronics (IRMMW-THz 2010)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2010-09-07
• [Presentation] Fundamental Oscillations at~ 900 GHz with Low Bias Voltages in RTDs Having Spike-Doped Structures (2010)
  • Author(s): S. Suzuki, K. Sawada, A. Teranishi, M. Asada, H. Sugiyama, and H. Yokoyama
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD2010)
  • Place of Presentation: Tokyo
  • Year and Date: 2010-06-30
• [Presentation] Fundamental Oscillations at ～900 GHz with Low Bias Voltages in RTDs Having Spike-Doped Structures (2010)
  • Author(s): S.Suzuki, K.Sawada, A.Teranishi, M.Asada, H.Sugiyama, H.Yokoyama
  • Organizer: Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2010)
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2010-06-30
• [Presentation] Room-Temperature Oscillation of Resonant Tunneling Diodes in Terahertz Range (2010)
  • Author(s): M. Asada and S. Suzuki
  • Organizer: Int. Symp. Compound Semicond.(ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] Room-Temperature Oscillation of Resonant Tunneling Diodes in Terahertz Range (2010)
  • Author(s): M.Asada, S.Suzuki
  • Organizer: Int.Symp.Compound Semicond.(ISCS 2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-04
• [Presentation] RTD Oscillators at 430-460 GHz with High Output Power(~ 200μW) Using Integrated Offset Slot Antennas (2010)
  • Author(s): S. Suzuki, K. Hinata, M. Shiraishi, M. Asada, H. Sugiyama, and H. Yokoyama
  • Organizer: Indium Phosphide and Related Compounds(IPRM 2010)
  • Place of Presentation: Takamatsu
  • Year and Date: 2010-06-02
• [Presentation] RTD Oscillators at 430-460 GHz with High Output Power (～200μW) Using Integrated Offset Slot Antennas (2010)
  • Author(s): S.Suzuki, K.Hinata, M.Shiraishi, M.Asada, H.Sugiyama, H.Yokoyama
  • Organizer: The 22st Int.Conf.Indium Phosphide and Related Materials (IPRM2010)
  • Place of Presentation: Takamatsu, Japan
  • Year and Date: 2010-06-02
• [Presentation] 共鳴トンネルダイオードを用いた室温テラヘルツ発振器 (2010)
  • Author(s): 鈴木左文, 浅田雅洋
  • Organizer: 日本学術振興会 第162委員会
  • Place of Presentation: 東京
  • Year and Date: 2010-05-07
• [Presentation] 高周波化・高出力化・高機能化を目指した共鳴トンネルダイオード室温THz発振器 (2010)
  • Author(s): 浅田雅洋, 鈴木左文
  • Organizer: 応用物理学会テラヘルツ電磁波技術研究会および電子情報通信学会エレクトロニクスソサエティテラヘルツ応用システム時限研究会合同研究討論会
  • Place of Presentation: 仙台秋保
  • Year and Date: 2010-02-26
• [Presentation] 共鳴トンネルダイオードを用いた室温テラヘルツ発振器 (2010)
  • Author(s): 鈴木左文, 浅田雅洋
  • Organizer: 応用物理学会応用電子物性分科会
  • Place of Presentation: 東京
  • Year and Date: 2010-01-29
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html
• [Remarks]
  • URL: http://www.pe.titech.ac.jp/AsadaLab/Asada_Lab.html
• [Patent(Industrial Property Rights)] 共鳴トンネルダイオードおよびテラヘルツ発振器 (2011)
  • Inventor(s): 杉山弘樹, 横山春喜, 鈴木左文, 浅田雅洋
  • Industrial Property Rights Holder: 日本電信電話株式会社,東京工業大学
  • Industrial Property Number: 2011-021439
  • Filing Date: 2011-02-03