Fabrication of novel spintronic devices using the ferromagnet/diamond semiconductor heterostructures
| Project/Area Number |
22760250
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya University |
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Principal Investigator |
UEDA Kenji 名古屋大学, 工学研究科, 准教授 (10393737)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2011: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2010: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
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| Keywords | 量子デバイス・スピンデバイス / ダイヤモンド / ダイヤモンド半導体 / 強磁性 / スピン注入 / スピンデバイス / ハーフメタル / ショットキー接合 / スピントロニクス / 強磁性体 / ホイスラー合金 |
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| Research Abstract |
In this research, we tried fabricating novel spintronic devices using ferromagnets/diamond semiconductors heterostructures and obtained mainly following three results.(1) It is found that ferromagnetic and half-metallic Heusler Co_2MnSi can be epitaxially grown on diamond for the first time.(2) Schottky barrier heights between ferromagnetic metal and diamond semiconductor can be controlled by selecting ferromagnetic metals with proper work function.(3) Signals related to spin injection were observed by 3-probe Hanle measurements using Ni/diamond ferromagnetic heterojunctions(τ=～20ps).
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Report
(3 results)
Research Products
(54 results)
