Development of high sensitivity non-radiation defect characterization systems for diamond semiconductor

• Project/Area Number: 22760300
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Single-year Grants
• Research Field: Measurement engineering
• Research Institution: Osaka University
• Principal Investigator: MAIDA Osamu 大阪大学, 大学院・工学研究科, 助教 (40346177)
• Project Period (FY): 2010 – 2011
• Project Status: Completed (Fiscal Year 2011)
• Budget Amount: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000); Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: ダイヤモンド / ワイドギャップ / 非輻射欠陥

Research Abstract

The purpose of this work is to develop a non-radiative defect characterization system for wide-gap semiconductor materials, especially diamond crystal. I have developed a temperature-variable(80～400K) photothermal spectroscopy using a high-sensitive signal detector with a piezoelectric device, and carried out the defect characterization of a high-pressure/ high-temperature synthesized diamond crystal and a self-standing homoepitaxial diamond film grown by a micro-wave plasma chemical vapor deposition method.

Research Products

• [Journal Article] Survey meter combining CVD diamond and silicon detectors for wide range of dose rates and high accumulated doses (2012)
  • Author(s): H.Sato
  • Journal Title: Radiation Measurements Volume: Vol.47 Issue: 4 Pages: 266-271
  • DOI: 10.1016/j.radmeas.2012.02.011
  • Peer Reviewed
• [Journal Article] Reduced influences of the HPHT substrates on the electronic quality of homoepitaxial CVD diamond layers and on their ultraviolet detector performance (2011)
  • Author(s): O. Maida, H. Sato, M. Kanasugi, S. Iguchi and T. Ito
  • Journal Title: Diamond and Related Materials Volume: Vol.20 Issue: 2 Pages: 242-245
  • DOI: 10.1016/j.diamond.2010.12.016
  • Peer Reviewed
• [Journal Article] Hall data analysis of heavily boron-doped CVD diamond films using a model considering an impurity band well separated from valence bands (2011)
  • Author(s): M.Aono
  • Journal Title: Diamond and Related Materials Volume: Vol.20 Issue: 10 Pages: 1357-1362
  • DOI: 10.1016/j.diamond.2011.08.008
  • Peer Reviewed
• [Presentation] ホウ素ドープ単結晶CVDダイヤモンドの高濃度ドープ領域における特性評価II (2012)
  • Author(s): 森玲央奈, 毎田修, 伊藤利道
  • Organizer: 第59回応用物理学関係連合講演会
  • Place of Presentation: 早稲田大学(東京都)
  • Year and Date: 2012-03-17
• [Presentation] Growth of phsphorus-doped homoepitaxial CVD diamond on vicinal(001) substrates (2011)
  • Author(s): H. Nishio, O. Maida and T. Ito
  • Organizer: 15th International Conference on Thin Films
  • Place of Presentation: Kyoto(Japan)
  • Year and Date: 2011-11-08
• [Presentation] Improvement on P-type performance of CVD diamond by isolating thin heavily-boron-doped layer as innumerable islands (2011)
  • Author(s): O. Maida, M. Aono and T. Ito
  • Organizer: 15th International Conference on Thin Films
  • Place of Presentation: Kyoto(Japan)
  • Year and Date: 2011-11-08
• [Presentation] Improvement on P-type performance of CVD diamond by isolating thinheavily-boron-doped layer as innumerable islands (2011)
  • Author(s): O.Maida
  • Organizer: 15th International Conference on Thin Films
  • Place of Presentation: 京都テルサ(京都府)
  • Year and Date: 2011-11-08
• [Presentation] Growth of phsphorus-doped homoepitaxial CVD diamond on vicinal (001) substrates (2011)
  • Author(s): H.Nishio
  • Organizer: 15th International Conference on Thin Films
  • Place of Presentation: 京都テルサ(京都府)
  • Year and Date: 2011-11-08
• [Presentation] (001)微斜面基板上の高濃度燐ドープダイヤモンドのMWPCVD成長における基板温度の適正化 (2011)
  • Author(s): 多田周平, 毎田修, 伊藤利道
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] ホウ素ドープ単結晶CVDダイヤモンドの高濃度ドープ領域における特性評価 (2011)
  • Author(s): 森玲央奈, 伊藤利道, 毎田修
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] (001)微斜面基板上の燐ドープCVDダイヤモンド薄膜におけるホモエピタキシャル成長プロセスの適正化 (2011)
  • Author(s): 西尾晴樹, 毎田修, 伊藤利道
  • Organizer: 第72回応用物理学会学術講演会
  • Place of Presentation: 山形大学(山形県)
  • Year and Date: 2011-08-30
• [Presentation] Fabrication of self-standing device-quality single-crystalline diamond films on vicinal(001) surfaces and its application to the high-energy photon detectors (2010)
  • Author(s): O. Maida, S. Iguchi, T. Igarashi, H. Sato and T. Ito
  • Organizer: 21st European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
  • Place of Presentation: Budapest(Hungary)
  • Year and Date: 2010-09-09
• [Presentation] Hall data analysis of heavily-boron-doped CVD diamond films based on a two-type carrier model and their application to improvement on p-type performance of CVD diamond (2010)
  • Author(s): M. Aono, O. Maida and T. Ito
  • Organizer: 21st European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
  • Place of Presentation: Budapest(Hungary)
  • Year and Date: 2010-09-09
• [Presentation] Fabrication of self-standing device-quality single-crystalline diamond films on vicinal (001) surfaces and its application to the high-energy photon detectors (2010)
  • Author(s): M.Aono, O.Maida, T.Ito
  • Organizer: 21st European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, and Nitrides
  • Place of Presentation: Budapest(Hungary)
  • Year and Date: 2010-09-06
• [Remarks]
  • URL: http://daiyan.eei.eng.osaka-u.ac.jp/