Development of high sensitivity non-radiation defect characterization systems for diamond semiconductor
| Project/Area Number |
22760300
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Measurement engineering
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| Research Institution | Osaka University |
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Principal Investigator |
MAIDA Osamu 大阪大学, 大学院・工学研究科, 助教 (40346177)
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| Project Period (FY) |
2010 – 2011
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| Project Status |
Completed (Fiscal Year 2011)
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| Budget Amount *help |
¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2011: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2010: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Keywords | ダイヤモンド / ワイドギャップ / 非輻射欠陥 |
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| Research Abstract |
The purpose of this work is to develop a non-radiative defect characterization system for wide-gap semiconductor materials, especially diamond crystal. I have developed a temperature-variable(80～400K) photothermal spectroscopy using a high-sensitive signal detector with a piezoelectric device, and carried out the defect characterization of a high-pressure/ high-temperature synthesized diamond crystal and a self-standing homoepitaxial diamond film grown by a micro-wave plasma chemical vapor deposition method.
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Report
(3 results)
Research Products
(15 results)
